NXP BT 134W-600D NXP Datasheet
DDATA SHEET
DISCRETE SEMICONDUCTORS
BT134W series
Triacs
Product specification
September 1997
1;3 Semiconductors Product specification
Triacs BT134W series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT134W- 500 600 800
applications requiring high BT134W- 500F 600F 800F
bidirectional transient and blocking BT134W- 500G 600G 800G
voltage capability and high thermal V
cycling performance. Typical voltages
applications include motor control, I
industrial and domestic lighting, I
heating and static switching. current
DRM
T(RMS)
TSM
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 1 1 1 A
Non-repetitive peak on-state 10 10 10 A
PIN DESCRIPTION
4
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
1
23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 50016001800 V
voltages
RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
2
tI
I
dI
/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
T
2
t for fusing t = 10 ms - 0.5 A2s
on-state current after dI
triggering T2+ G+ - 50 A/μs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
t = 16.7 ms - 11 A
/dt = 0.2 A/μs
G
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
-500 -600 -800
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
September 1997 1 Rev 1.200
1;3 SemiconductorV Product specification
Triacs BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
BT134W- ... ...F ...G
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
On-state voltage IT = 2 A - 1.2 1.50 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
V
= 400 V; IT = 0.1 A; 0.25 0.4 - V
D
= 125 ˚C
T
Off-state leakage current VD = V
j
T
= 125 ˚C
j
; - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
/dt Critical rate of rise of VDM =67% V
dV
D
off-state voltage T
= 125 ˚C; exponential
j
waveform; gate open
circuit
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/μs
dV
com
t
gt
commutating voltage I
= 1 A;
T(RMS)
/dt = 1.8 A/ms; gate
dI
com
open circuit
Gate controlled turn-on ITM = 1.5 A; - - - 2 - μs
time V
= V
D
DRM(max)
/dt = 5 A/μs;
dI
G
BT134W- ... ...F ...G
; 100 50 200 250 - V/μs
DRM(max)
; IG = 0.1 A;
September 1997 2 Rev 1.200
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