DDATA SHEET
DISCRETE SEMICONDUCTORS
BT134W series
Triacs
Product specification
September 1997
1;3 Semiconductors Product specification
Triacs BT134W series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT134W- 500 600 800
applications requiring high BT134W- 500F 600F 800F
bidirectional transient and blocking BT134W- 500G 600G 800G
voltage capability and high thermal V
cycling performance. Typical voltages
applications include motor control, I
industrial and domestic lighting, I
heating and static switching. current
DRM
T(RMS)
TSM
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 1 1 1 A
Non-repetitive peak on-state 10 10 10 A
PIN DESCRIPTION
4
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
1
23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 50016001800 V
voltages
RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
2
tI
I
dI
/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
T
2
t for fusing t = 10 ms - 0.5 A2s
on-state current after dI
triggering T2+ G+ - 50 A/μs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
t = 16.7 ms - 11 A
/dt = 0.2 A/μs
G
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
-500 -600 -800
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
September 1997 1 Rev 1.200
1;3 SemiconductorV Product specification
Triacs BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
BT134W- ... ...F ...G
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
On-state voltage IT = 2 A - 1.2 1.50 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
V
= 400 V; IT = 0.1 A; 0.25 0.4 - V
D
= 125 ˚C
T
Off-state leakage current VD = V
j
T
= 125 ˚C
j
; - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
/dt Critical rate of rise of VDM =67% V
dV
D
off-state voltage T
= 125 ˚C; exponential
j
waveform; gate open
circuit
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/μs
dV
com
t
gt
commutating voltage I
= 1 A;
T(RMS)
/dt = 1.8 A/ms; gate
dI
com
open circuit
Gate controlled turn-on ITM = 1.5 A; - - - 2 - μs
time V
= V
D
DRM(max)
/dt = 5 A/μs;
dI
G
BT134W- ... ...F ...G
; 100 50 200 250 - V/μs
DRM(max)
; IG = 0.1 A;
September 1997 2 Rev 1.200
1;3 SemiconductorV Product specification
Triacs BT134W series
1
BT134W
IT(RMS) / A
Tsp(max) / C
Ptot / W
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
dI /dt limit
T2- G+ quadrant
10
, where α = conduction angle.
T(RMS)
BT134W
I
T
T
Tj initial = 25 C max
T
104
107
= 180
110
120
90
113
60
116
30
119
122
125
, versus rms
tot
I
TSM
time
IT(RMS) / A
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus solder point temperature T
IT(RMS) / A
2
1.5
1
0.5
BT134W
Tsp / C
BT134W
108 C
sp
T(RMS)
.
,
1
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, t
ITSM / A
12
10
8
6
4
2
0
1 10 100 1000
, versus pulse width tp, for
TSM
BT134W
Number of cycles at 50Hz
≤ 20ms.
p
I
T
T
Tj initial = 25 C max
I
TSM
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
BT136
Tj / C
≤ 108˚C.
sp
Fig.6. Normalised gate trigger voltage
V
)/ VGT(25˚C), versus junction temperature Tj.
GT(Tj
September 1997 3 Rev 1.200
1;3 SemiconductorV Product specification
Triacs BT134W series
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT136
Tj / C
T2+ G+
T2+ GT2- GT2- G+
Fig.7. Normalised gate trigger current
I
)/ IGT(25˚C), versus junction temperature T
GT(Tj
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
j
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
.
j
IT / A
2
Tj = 125 C
Tj = 25 C
1.5
Vo = 1.0 V
Rs = 0.21 Ohms
1
0.5
0
0 0.5 1 1.5 2
BT134W
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
Zth j-sp (K/W)
100
10
1
0.1
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
BT134W
unidirectional
P
D
tp / s
pulse width t
bidirectional
t
p
.
p
t
th j-sp
, versus
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
dVcom/dt (V/us)
1000
off-state dV/dt limit
BT134...G SERIES
100
10
dIcom/dt = 5.1 3.9 2.3
1
0 50 100 150
A/ms
Tj / C
BT134 SERIES
BT134...F SERIES
1.83
1.4
Fig.12. Typical commutation dV/dt versus junction
/dt. The triac
T
on the appropriate curve for pre-commutation dI
T
/dt.
September 1997 4 Rev 1.200
1;3 SemiconductorV Product specification
Triacs BT134W series
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
1.5
min
1.5
min
(3x)
2.3
4.6
6.3
Dimensions in mm.
36
18
60
4.6
9
4.5
10
7
50
15
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35
μ
m thick).
September 1997 5 Rev 1.200
1;3 Semiconductors Product specification
Triacs BT134W series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
16
max
1.8
max
0.32
0.24
0.10
0.02
10
max
13
1.05
0.85
6.7
6.3
3.1
2.9
4
1
2.3
23
0.80
0.60
4.6
B
A
7.3
6.7
M
B
0.1
3.7
3.3
(4x)
Fig.15. SOT223 surface mounting package.
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.
2. Epoxy meets UL94 V0 at 1/8".
AM0.2
September 1997 6 Rev 1.200
NXP Semiconductors
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