NXP BSS84AKS Schematic [ru]

BSS84AKS

TSSOP6

1. Product profile

1.1 General description

1.2 Features and benefits

50 V, 160 mA dual P-channel Trench MOSFET

Rev. 1 — 23 May 2011 Product data sheet

Dual P-channel enhancement mode Field- Ef fe ct Transistor (FET) in a very small SOT363
(SC-88) package using Trench MOSFET technology.

 Logic-level compatible
 Very fast switching

 ESD protection up to 1 kV
 AEC-Q101 qualified

 Trench MOSFET technology

1.3 Applications

 Relay driver
 High-speed line driver

 High-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

DS

V

GS

I

D

Static characteristics (per transistor)

R

DSon

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain-source voltage Tj=25°C ---50V
gate-source voltage -20 - 20 V
drain current VGS=-10V; T

drain-source on-state
resistance

drain 1 cm

2

.

=25°C

amb

VGS=-10V; ID= -100 mA;
Tj=25°C

[1]

---160mA

-4.57.5Ω

NXP Semiconductors

2. Pinning information

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1S1source 1
2 G1 gate 1

56

4

D1

3D2drain 2
4S2source 2
5 G2 gate 2
6D1drain 1

132

SOT363 (TSSOP6)

G1 G2

S1D2S2

sym147

3. Ordering information

Table 3. Ordering information

Type number Package

BSS84AKS TSSOP6 plastic surface-mounted package; 6 leads SOT363

Name Description Version

4. Marking

Table 4. Marking codes

Type number Marking code

BSS84AKS %VY

[1]

[1] % = placeholder for manufacturing site code

BSS84AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 23 May 2011 2 of 17

NXP Semiconductors

5. Limiting values

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

DS

V

GS

I

D

I

DM

P

tot

Per device

P

tot

T

j

T

amb

T

stg

Source-drain diode

I

S

ESD maximum rating

V

ESD

drain-source voltage Tj=25°C - -50 V
gate-source voltage -20 20 V
drain current VGS=-10V; T

=-10V; T

V

GS

peak drain current T
total power dissipation T

total power dissipation T

= 25 °C; single pulse; tp≤ 10 µs - -640 mA

amb

=25°C

amb

= 25 °C - 990 mW

T

sp

=25°C

amb

amb
amb

=25°C
= 100 °C

[1]

- -160 mA

[1]

- -100 mA

[2]

- 280 mW

[1]

- 320 mW

[2]

- 445 mW
junction temperature -55 150 °C
ambient temperature -55 150 °C
storage temperature -65 150 °C

source current T

amb

electrostatic discharge voltage HBM

=25°C

[1]

- -160 mA

[3]

- 1000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.

BSS84AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 23 May 2011 3 of 17

NXP Semiconductors

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

001aao121

Tj (°C)

P

(%)

120

der

80

40

0

-75 17512525 75-25

Fig 1. Normalized total power dissipation as a

function of junction temperature

-1

I

D

(A)

-1

-10

120

I

der

(%)

80

40

0

-75 17512525 75-25

001aao122

Tj (°C)

Fig 2. Normalized continuous drain curre nt as a

function of junction temperature

001aao139

(1)

(2)

(3)

(4)

-10

-10

-2

-3

-10

I

DM

(1) t

-1

is single pulse

= 100 μs

p

-10-1
VDS (V)

(5)

(6)

2

-10

(2) tp = 1 ms
(3) t

= 10 ms

p

(4) DC; T

= 25 °C

sp

(5) tp = 100 ms
(6) DC; T

= 25 °C; drain mounting pad 1 cm

amb

2

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

BSS84AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 23 May 2011 4 of 17

NXP Semiconductors

6. Thermal characteristics

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

thermal resistance from junction to ambient in free air

[1]

- - 300 K/W

Per transistor

R

th(j-a)

R

th(j-sp)

thermal resistance from junction to ambient in free air

thermal resistance from junction to solder point - - 130 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

3

10

th(j-a)

10

2

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.1

0.05

0.02

0

0.01

0.2

Z

(K/W)

[1]

- 390 445 K/W

[2]

- 340 390 K/W

2

.

017aaa034

1

−3

10

−2

−1

10

10110

2

10

tp (s)

3

10

FR4 PCB, standard footprint

Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BSS84AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 23 May 2011 5 of 17

NXP Semiconductors

BSS84AKS

50 V, 160 mA dual P-channel Trench MOSFET

tp (s)

017aaa035

3

10

3

10

th(j-a)

10

2

10

1

−3

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.1

0.05

0

0.2

0.02

0.01

−2

Z

(K/W)

FR4 PCB, mounting pad for drain 1 cm

−1

10

2

10110

2

10

Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BSS84AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 23 May 2011 6 of 17