NXP BSN20BK Schematic [ru]

S

O

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2

3

BSN20BK

60 V, N-channel Trench MOSFET

18 December 2014 Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

2. Features and benefits

Logic-level compatible

•

Very fast switching

•

Trench MOSFET technology

•

ElectroStatic Discharge (ESD) protection: 2 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

•

Low-side loadswitch

•

Switching circuits

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

D

Static characteristics

R

DSon

drain-source voltage - - 60 V

gate-source voltage

drain current

drain-source on-state
resistance

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

Tj = 25 °C

-20 - 20 V

VGS = 10 V; T

VGS = 10 V; Tsp = 25 °C - - 330 mA

VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 2.8 Ω

amb

= 25 °C [1] - - 265 mAI

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1 2

3

017aaa255

G

D

S

BSN20BK

60 V, N-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BSN20BK TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

BSN20BK %4S

[1] % = placeholder for manufacturing site code

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 2 / 16

NXP Semiconductors

Tj(°C)

- 75 17512525 75- 25

017aaa123

40

80

120

P

der

(%)

0

Tj(°C)

- 75 17512525 75- 25

017aaa124

40

80

120

I

der

(%)

0

BSN20BK

60 V, N-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

drain-source voltage - 60 V

gate-source voltage

drain current

Tj = 25 °C

VGS = 10 V; T

VGS = 10 V; T

-20 20 V

= 25 °C [1] - 265 mA

amb

= 100 °C [1] - 170 mA

amb

VGS = 10 V; Tsp = 25 °C - 330 mA

I

P

T

T

T

DM

tot

j

amb

stg

peak drain current T

total power dissipation

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

Source-drain diode

I

S

source current T

= 25 °C; single pulse; tp ≤ 10 µs - 0.9 A

amb

amb

= 25 °C

[2] - 310 mWT

[1] - 402 mW

Tsp = 25 °C - 1672 mW

= 25 °C [1] - 200 mA

amb

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of junction temperature

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 3 / 16

Fig. 2. Normalized continuous drain current as a

function of junction temperature

NXP Semiconductors

aaa-015759

VDS (V)

10

-1

10

2

101

10

-1

10

-2

1

I

D

(A)

10

-3

Limit R

DSon

= VDS/I

D

(1)

(2)

(3)

(4)

(5)

(6)

(7)

BSN20BK

60 V, N-channel Trench MOSFET

IDM = single pulse

(1) tp = 10 µs

(2) tp = 100 µs

(3) tp = 1 ms

(4) tp = 10 ms

(5) DC; Tsp = 25 °C

(6) tp = 100 ms

(7) DC; T

= 25 °C; drain mounting pad 1 cm

amb

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

2

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance
from junction to
ambient

R

th(j-sp)

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 4 / 16

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

in free air [1] - 351 404 K/W

[2] - 271 311 K/W

t ≤ 5 s [2] - 210 241 K/W

- 65 75 K/W

NXP Semiconductors

aaa-014128

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.33

0.25

0.05

0.02

0.01

0

0.10

0.20

0.50

aaa-014129

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

0.02

0.01

0

duty cycle = 1

0.75

0.33

0.05

0.10

0.20

0.50

0.25

BSN20BK

60 V, N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 5 / 16

NXP Semiconductors

BSN20BK

60 V, N-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GSth

I

DSS

I

GSS

drain-source

ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V

breakdown voltage

gate-source threshold

ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 1 1.4 V

voltage

drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA

gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA

R

DSon

drain-source on-state
resistance

g

fs

forward
transconductance

Dynamic characteristics

Q

Q

Q

C

C

C

G(tot)

GS

GD

iss

oss

rss

total gate charge - 0.49 - nC

gate-source charge - 0.12 - nC

gate-drain charge

input capacitance - 20.2 - pF

output capacitance - 3.1 10 pF

reverse transfer
capacitance

t

d(on)

t

r

t

d(off)

t

f

turn-on delay time - 7.9 - ns

rise time - 8.4 - ns

turn-off delay time - 12.5 - ns

fall time

Source-drain diode

V

SD

source-drain voltage IS = 200 mA; VGS = 0 V; Tj = 25 °C - 0.86 1.2 V

VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 0.3 µA

VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -0.3 µA

VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 2.8 Ω

VGS = 10 V; ID = 200 mA; Tj = 150 °C - 4.3 5.7 Ω

VGS = 5 V; ID = 200 mA; Tj = 25 °C - 2.2 3.2 Ω

VGS = 2.5 V; ID = 75 mA; Tj = 25 °C - 2.6 4 Ω

VDS = 10 V; ID = 200 mA; Tj = 25 °C - 0.71 - S

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

Tj = 25 °C

- 0.12 - nC

VDS = 30 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 2 7 pF

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

R

= 6 Ω; Tj = 25 °C

G(ext)

- 5.1 - ns

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 6 / 16