NXP BLF6G10LS-200 Technical data

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BLF6G10LS-200

Power LDMOS transistor

Rev. 01 — 18 January 2008 Preliminary data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.

Table 1. Typical performance

Typical RF performance at T

Mode of operation f V

2-carrier W-CDMA 869 to 894 28 40 20 27 −41

= 25°C in a class-AB production test circuit.

case

P

DS

(MHz) (V) (W) (dB) (%) (dBc)

L(AV)

G

p

η

ACPR

D

[1]

CAUTION

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a

supply voltage of 28 V and an IDq of 1400 mA:

u Average output power = 40 W
u Power gain = 20 dB
u Efficiency = 27 %

u ACPR = −41 dBc
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (800 MHz to 1000 MHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

NXP Semiconductors

1.3 Applications

n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and

multicarrier applications in the 800 MHz to 1000 MHz frequency range.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 drain
2 gate
3 source

[1] Connected to flange

3. Ordering information

BLF6G10LS-200

Power LDMOS transistor

2

sym112

1

3

1

[1]

3

2

Table 3. Ordering information

Type number Package

BLF6G10LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage −0.5 +13 V
drain current - 49 A
storage temperature −65 +150 °C
junction temperature - 225 °C

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-case)

thermal resistance from junction to case T

Name Description Version

=80°C; PL= 40 W 0.34 K/W

case

BLF6G10LS-200_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 18 January 2008 2 of 11

NXP Semiconductors

6. Characteristics

Table 6. Characteristics

Tj = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

V

GSq

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

BLF6G10LS-200

Power LDMOS transistor

drain-source breakdown
voltage

gate-source threshold voltage VDS=10V;ID= 270 mA 1.4 1.9 2.4 V
gate-source quiescent voltage VDS= 28 V;

drain leakage current VGS=0V; VDS=28V - - 5 µA
drain cut-off current VGS=V

gate leakage current VGS= 11 V; VDS= 0 V - - 450 nA
forward transconductance VDS=10V; ID= 9.45 A - 19 - S
drain-source on-state

resistance
feedback capacitance VGS=0V; VDS=28V;

VGS=0V; ID= 0.9 mA 65 - - V

1.7 2.2 2.7 V

I

= 1620 mA

D

V

=10V

DS

VGS=V
I

= 9.45 A

D

GS(th)

GS(th)

+ 3.75 V;

+ 3.75 V;

40 45 - A

- 0.06 - Ω

- 3.7 - pF

f= 1MHz

7. Application information

Table 7. Application information

Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

P

L(AV)

G

p

RL

in

η

D

ACPR adjacent channel power ratio P

7.1 Ruggedness in class-AB operation

The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 7 : 1 through all phases under the following conditions: VDS=28V;
IDq= 1400 mA; PL= 200 W; f = 894 MHz.

average output power - 40 - W
power gain P
input return loss P
drain efficiency P

= 871.5 MHz; f2= 876.5 MHz; f3= 886.5 MHz; f4= 891.5 MHz;

1

=28V; IDq= 1400 mA; T

DS

=25°C; unless otherwise specified; in a

case

= 40 W 18.5 20.2 21.5 dB

L(AV)

= 40 W - −6.4 −4.5 dB

L(AV)

= 40 W 24 27 - %

L(AV)

= 40 W - −41 −37 dBc

L(AV)

BLF6G10LS-200_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 18 January 2008 3 of 11

NXP Semiconductors

7.2 One-tone CW

BLF6G10LS-200

Power LDMOS transistor

VDS = 28 V; IDq = 1400 mA; f = 894 MHz.

Fig 1. One-tone CW power gain and drain efficiency as functions of load power;

typical values

7.3 Two-tone CW

22

G

p

(dB)

21

20

19

18

17

16

15

0 2401608040 120 200

G

p

η

D

001aah526

PL (W)

70

η

D

(%)

60

50

40

30

20

10

0

22

G

p

(dB)

20

18

16

0 350300100 20050 150 250

G

p

η

D

001aah534

P

L(PEP)

(W)

60

η

D

(%)

40

20

0

VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz; f2 = 894.05 MHz.

Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load

power; typical values

BLF6G10LS-200_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 18 January 2008 4 of 11