200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.Typical performance
Typical RF performance at T
Mode of operationfV
2-carrier W-CDMA869 to 89428402027−41
= 25°C in a class-AB production test circuit.
case
P
DS
(MHz)(V)(W)(dB)(%)(dBc)
L(AV)
G
p
η
ACPR
D
[1]
CAUTION
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
u Average output power = 40 W
u Power gain = 20 dB
u Efficiency = 27 %
u ACPR = −41 dBc
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (800 MHz to 1000 MHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
1.3 Applications
n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 800 MHz to 1000 MHz frequency range.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
Symbol ParameterConditionsMinTypMaxUnit
P
L(AV)
G
p
RL
in
η
D
ACPRadjacent channel power ratioP
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 7 : 1 through all phases under the following conditions: VDS=28V;
IDq= 1400 mA; PL= 200 W; f = 894 MHz.
average output power-40-W
power gainP
input return lossP
drain efficiencyP
Preliminary data sheetRev. 01 — 18 January 20088 of 11
NXP Semiconductors
10. Abbreviations
Table 9.Abbreviations
AcronymDescription
3GPPThird Generation Partnership Project
CCDFComplementary Cumulative Distribution Function
CDMACode Division Multiple Access
CWContinuous Wave
DPCHDedicated Physical CHannel
EDGEEnhanced Data rates for GSM Evolution
GSMGlobal System for Mobile communications
LDMOSLaterally Diffused Metal Oxide Semiconductor
LDMOSTLaterally Diffused Metal-Oxide Semiconductor Transistor
PARPeak-to-Average power Ratio
PDPCHtransmission Power of the Dedicated Physical CHannel
RFRadio Frequency
VSWRVoltage Standing Wave Ratio
W-CDMAWideband Code Division Multiple Access
Preliminary data sheetRev. 01 — 18 January 20089 of 11
NXP Semiconductors
12. Legal information
12.1Data sheet status
BLF6G10LS-200
Power LDMOS transistor
Document status
Objective [short] data sheetDevelopmentThis document contains data from the objective specification for product development.
Preliminary [short] data sheet QualificationThis document contains data from the preliminary specification.
Product [short] data sheetProductionThis document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document mayhave changed since thisdocument was published and maydiffer incase of multiple devices.The latest productstatus
information is available on the Internet at URL
[1][2]
Product status
12.2Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s)and title.Ashort data sheet isintended
for quickreference only and shouldnot be relied upon tocontaindetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3Disclaimers
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Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
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notice. Thisdocumentsupersedes and replaces all informationsupplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limiting values are stressratings only and operationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions ofcommercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
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No offer to sell or license — Nothing in this document may be interpreted
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Notice: Allreferenced brands,product names, servicenamesand trademarks
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Please be aware that important notices concerning this document and the product(s)
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