NXP BGA6589 Schematic [ru]
BGA6589
MMIC wideband medium power amplifier
Rev. 02 — 25 May 2009 Product data sheet
1. Product profile
1.1 General description
The BGA6589 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 3-pin SOT89plasticlowthermal
resistance SMD package.
The BGA6x89 series of medium power gain blocks are resistive feedback Darlington
configured amplifiers. Resistive feedback provides large bandwidth with high accuracy.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Broadband 50 Ω gain block
n 20 dBm output power
n SOT89 package
n Single supply voltage needed
1.3 Applications
n Broadband medium power gain blocks
n Small signal high linearity amplifiers
n Variable gain and high output power in combination with the BGA2031
n Cellular, PCS and CDPD
n IF/RF buffer amplifier
n Wireless data SONET
n Oscillator amplifier, final PA
n Drivers for CATV amplifier
NXP Semiconductors
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
D
I
S
|s
21
NF noise figure f = 1950 MHz - 3.3 - dB
P
L1dB
DC device voltage on pin 1; IS = 81 mA - 4.8 - V
DC supply current VS = 9 V; R
2
|
insertion power gain f = 1950 MHz - 17 - dB
load power at 1 dB gain
compression
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 RF_OUT/BIAS
2 GND
3 RF_IN
BGA6589
MMIC wideband medium power amplifier
= 51 Ω;
T
= 25 °C
j
f = 850 MHz - 21 - dBm
f = 1950 MHz - 20 - dBm
bias
-81-mA
13
2
3. Ordering information
Table 3. Ordering information
Type number Package
BGA6589 SC-62 plastic surface-mounted package; collector pad for
4. Marking
Table 4. Marking codes
Type number Marking code
BGA6589 5A
321
Name Description Version
good heat transfer; 3 leads
sym130
SOT89
BGA6589_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 May 2009 2 of 13
NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
D
I
S
P
tot
T
stg
T
j
P
D
[1] Tsp is the temperature at the solder point of the ground lead, pin 2.
DC device voltage on pin 1; RF input AC coupled - 6 V
DC supply current - 150 mA
total power dissipation Tsp≤ 70 °C
storage temperature −65 +150 °C
junction temperature - 150 °C
drive power - 15 dBm
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
[1] Tsp is the temperature at the solder point of the ground lead, pin 2.
thermal resistance from junction to solder point Tsp≤ 70 °C
BGA6589
MMIC wideband medium power amplifier
[1]
- 800 mW
[1]
100 K/W
7. Characteristics
Table 7. Static characteristics
VS = 9 V; Tj = 25°C; R
Symbol Parameter Conditions Min Typ Max Unit
V
D
I
S
[1] VS = DC operating supply voltage applied to R
Table 8. Characteristics
VS=9V;IS= 81 mA;T
(see
Symbol Parameter Conditions Min Typ Max Unit
2
|
|s
21
R
LIN
R
LOUT
[1]
=51Ω.
bias
DC device voltage on pin 1; IS = 81 mA - 4.8 - V
DC supply current 73 81 89 mA
; see Figure 10.
bias
=25°C; R
amb
=51Ω; IP3
bias
tone spacing =1MHz; PL= 0 dBm per tone
(out)
Figure 10); ZL = ZS = 50Ω; unless otherwise specified.
insertion power gain f = 850 MHz - 22 - dB
f = 1950 MHz - 17 - dB
f = 2500 MHz - 15 - dB
return losses input f = 850 MHz - 9 - dB
f = 1950 MHz - 11 - dB
f = 2500 MHz - 15 - dB
return losses output f = 850 MHz - 10 - dB
f = 1950 MHz - 13 - dB
f = 2500 MHz - 13 - dB
BGA6589_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 May 2009 3 of 13
NXP Semiconductors
BGA6589
MMIC wideband medium power amplifier
Table 8. Characteristics
VS=9V;IS= 81 mA; T
(see
Figure 10); ZL = ZS = 50Ω; unless otherwise specified.
=25°C; R
amb
…continued
bias
=51Ω; IP3
tone spacing = 1 MHz; PL= 0 dBm per tone
(out)
Symbol Parameter Conditions Min Typ Max Unit
NF noise figure f = 850 MHz - 3.0 - dB
f = 1950 MHz - 3.3 - dB
f = 2500 MHz - 3.4 - dB
K stability factor f = 850 MHz - 1.1 -
f = 2500 MHz - 1.1 -
P
IP3
L1dB
load power at 1 dB gain
compression
input intercept point f = 850 MHz - 11 - dBm
(in)
f = 850 MHz - 21 - dBm
f = 1950 MHz - 20 - dBm
f = 2500 MHz - 15 - dBm
IP3
output intercept point f = 850 MHz - 33 - dBm
(out)
f = 2500 MHz - 30 - dBm
+0.5
90°
+1
+2
45°135°
1.0
0.8
0.6
+0.2
0
180°
−0.2
IS = 81 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
0.50.2
2.6 GHz
−0.5
1
−1
−90°
2
200 MHz
Fig 1. Input reflection coefficient (S11); typical values
−2
+5
5
10
−5
−45°−135°
mgx409
0.4
0.2
0°
0
1.0
BGA6589_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 May 2009 4 of 13
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