NXP BGA6589 Schematic [ru]

BGA6589

MMIC wideband medium power ampliﬁer

Rev. 02 — 25 May 2009 Product data sheet

1. Product proﬁle

1.1 General description

The BGA6589 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power ampliﬁer with internal matching circuit in a 3-pin SOT89plasticlowthermal resistance SMD package.

The BGA6x89 series of medium power gain blocks are resistive feedback Darlington conﬁgured ampliﬁers. Resistive feedback provides large bandwidth with high accuracy.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

n Broadband 50 Ω gain block n 20 dBm output power n SOT89 package n Single supply voltage needed

1.3 Applications

n Broadband medium power gain blocks n Small signal high linearity ampliﬁers n Variable gain and high output power in combination with the BGA2031 n Cellular, PCS and CDPD n IF/RF buffer ampliﬁer n Wireless data SONET n Oscillator ampliﬁer, ﬁnal PA n Drivers for CATV ampliﬁer

NXP Semiconductors

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

NF noise ﬁgure f = 1950 MHz - 3.3 - dB P

L1dB

DC device voltage on pin 1; IS = 81 mA - 4.8 - V DC supply current VS = 9 V; R

insertion power gain f = 1950 MHz - 17 - dB

load power at 1 dB gain compression

2. Pinning information

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 RF_OUT/BIAS 2 GND 3 RF_IN

BGA6589

MMIC wideband medium power ampliﬁer

= 51 Ω;

= 25 °C

f = 850 MHz - 21 - dBm f = 1950 MHz - 20 - dBm

bias

-81-mA

3. Ordering information

Table 3. Ordering information

Type number Package

BGA6589 SC-62 plastic surface-mounted package; collector pad for

4. Marking

Table 4. Marking codes

Type number Marking code

BGA6589 5A

321

Name Description Version

good heat transfer; 3 leads

sym130

SOT89

Product data sheet Rev. 02 — 25 May 2009 2 of 13

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

stg

[1] Tsp is the temperature at the solder point of the ground lead, pin 2.

DC device voltage on pin 1; RF input AC coupled - 6 V DC supply current - 150 mA total power dissipation Tsp≤ 70 °C storage temperature −65 +150 °C junction temperature - 150 °C drive power - 15 dBm

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

[1] Tsp is the temperature at the solder point of the ground lead, pin 2.

thermal resistance from junction to solder point Tsp≤ 70 °C

BGA6589

MMIC wideband medium power ampliﬁer

[1]

- 800 mW

[1]

100 K/W

7. Characteristics

Table 7. Static characteristics

VS = 9 V; Tj = 25°C; R

Symbol Parameter Conditions Min Typ Max Unit

[1] VS = DC operating supply voltage applied to R

Table 8. Characteristics

VS=9V;IS= 81 mA;T (see

Symbol Parameter Conditions Min Typ Max Unit

LIN

LOUT

[1]

=51Ω.

bias

DC device voltage on pin 1; IS = 81 mA - 4.8 - V DC supply current 73 81 89 mA

; see Figure 10.

bias

=25°C; R

amb

=51Ω; IP3

bias

tone spacing =1MHz; PL= 0 dBm per tone

(out)

Figure 10); ZL = ZS = 50Ω; unless otherwise speciﬁed.

insertion power gain f = 850 MHz - 22 - dB

f = 1950 MHz - 17 - dB f = 2500 MHz - 15 - dB

return losses input f = 850 MHz - 9 - dB

f = 1950 MHz - 11 - dB f = 2500 MHz - 15 - dB

return losses output f = 850 MHz - 10 - dB

f = 1950 MHz - 13 - dB f = 2500 MHz - 13 - dB

Product data sheet Rev. 02 — 25 May 2009 3 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

Table 8. Characteristics

VS=9V;IS= 81 mA; T (see

Figure 10); ZL = ZS = 50Ω; unless otherwise speciﬁed.

=25°C; R

amb

…continued

bias

=51Ω; IP3

tone spacing = 1 MHz; PL= 0 dBm per tone

(out)

Symbol Parameter Conditions Min Typ Max Unit

NF noise ﬁgure f = 850 MHz - 3.0 - dB

f = 1950 MHz - 3.3 - dB f = 2500 MHz - 3.4 - dB

K stability factor f = 850 MHz - 1.1 -

f = 2500 MHz - 1.1 -

IP3

L1dB

load power at 1 dB gain compression

input intercept point f = 850 MHz - 11 - dBm

(in)

f = 850 MHz - 21 - dBm f = 1950 MHz - 20 - dBm

f = 2500 MHz - 15 - dBm

IP3

output intercept point f = 850 MHz - 33 - dBm

(out)

f = 2500 MHz - 30 - dBm

+0.5

90°

45°135°

1.0

0.8

0.6

+0.2

180°

−0.2

IS = 81 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.

0.50.2

2.6 GHz

−0.5

−1

−90°

200 MHz

Fig 1. Input reﬂection coefﬁcient (S11); typical values

−2

−5

−45°−135°

mgx409

0.4

0.2

0°

1.0

Product data sheet Rev. 02 — 25 May 2009 4 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

90° +1

+0.5

180°

+0.2

−0.2

−0.5

2.6 GHz

0.50.2

−1

−90°

200 MHz

IS = 81 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.

Fig 2. Output reﬂection coefﬁcient (s22); typical values

−2

1.0

45°135°

−5

−45°−135°

mgx410

0.8

0.6

0.4

0.2

0°

1.0

|s21|

(dB)

0 1500500 2000 2500

1000

mgx412

f (MHz)

IS = 81 mA; VS = 9 V; PD= −30 dBm; ZO = 50 Ω.I

Fig 3. Insertion gain (|s21|2) as a function of

frequency; typical values

|s12|

(dB)

−10

−20

−30

−40

0 1500500 2000 2500

= 81 mA; VS = 9 V; PD= −30 dBm; ZO = 50 Ω.

1000

mgx411

f (MHz)

Fig 4. Isolation (|s12|2) as a function of frequency;

typical values

Product data sheet Rev. 02 — 25 May 2009 5 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

L1dB

(dBm)

0 1500500 2000 2500

1000

mgx413

f (MHz)

IS = 81 mA; VS = 9 V; ZO = 50 Ω.I

Fig 5. Load power as a function of frequency; typical

values

mgx416

IP3

(out)

(dBm)

0 1500500 2000 2500

= 81 mA; VS = 9 V; PL = 0 dBm; ZO = 50 Ω.

1000

mgx414

f (MHz)

Fig 6. Output intercept as a function of frequency;

typical values

(dB)

mgx415

0 1500500 2000 2500

1000

f (MHz)

IS = 81 mA; VS = 9 V; ZO = 50 Ω.I

Fig 7. Stability factor as a function of frequency;

typical values

0 1500500 2000 2500

= 81 mA; VS = 9 V; ZO = 50 Ω.

1000

f (MHz)

Fig 8. Noise ﬁgure as a function of frequency; typical

values

Product data sheet Rev. 02 — 25 May 2009 6 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

VS = 9 V; R

Fig 9. Supply current as a function of operating junction temperature; typical values

8. Application information

Figure 10 shows a typical application circuit for the BGA6589 MMIC. The device is

internally matched to 50 Ω, and therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to ﬁne tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor. A 1 µF capacitor (C5) can be added for optimum supply decoupling. The external components should be placed as close as possible to the MMIC. When using via holes, use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias resistor providing DC current stability with temperature.

100

(mA)

−40 40−20 0 60 80

51 Ω.

bias

mgx417

(°C)

(2)

mgx419

50 Ω

microstrip

C1 C2

C4 C5

50 Ω

microstrip

(1)

(1) Optional capacitor for optimum supply decoupling. (2) R1 values at operating supply voltage (VS):

VS=6V; R1=15Ω. VS=9V; R1=51Ω. VS= 11.5 V; R1 = 82 Ω.

Fig 10. Typical application circuit

Product data sheet Rev. 02 — 25 May 2009 7 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

Table 9. List of components

See Figure 10 for circuit.

Component Description Type Value at operating frequency

500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz

C1, C2 multilayer ceramic chip

capacitor

C3 multilayer ceramic chip

capacitor

C4 multilayer ceramic chip

capacitor

[1]

electrolytic or tantalum

capacitor L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH R1 SMD resistor, 0.5 W;

=9V

[1] Optional.

0603 220 pF 100 pF 68 pF 56 pF 39 pF

0603 100 pF 68 pF 22 pF 22 pF 15 pF

0603 1 nF 1 nF 1 nF 1 nF 1 nF

0603 1 µF1µF1µF1µF1µF

-51Ω 51 Ω 51 Ω 51 Ω 51 Ω

Table 10. Scattering parameters

IS = 81 mA; VS=9V; PD =−30 dBm; ZO=50Ω; T

f (MHz) s

Magnitude (ratio)

Angle (degree)

Magnitude (ratio)

=25°C.

amb

Angle (degree)

Magnitude (ratio)

Angle (degree)

Magnitude (ratio)

K factor

Angle (degree)

200 0.30 −6.87 16.61 161.86 0.04 2.38 0.34 −20.03 1.0 300 0.31 −10.91 16.18 153.02 0.04 3.66 0.34 −30.50 1.0 400 0.32 −15.72 15.59 144.39 0.04 5.17 0.34 −40.74 1.1 500 0.33 −21.0 14.91 136.01 0.04 6.75 0.34 −50.56 1.1 600 0.33 −26.44 14.19 128.12 0.04 8.67 0.34 −60.07 1.1 700 0.34 −32.08 13.51 120.88 0.04 10.94 0.33 −69.21 1.1 800 0.34 −37.75 12.77 114.19 0.04 13.65 0.33 −77.91 1.1 900 0.35 −43.18 11.88 107.40 0.04 15.15 0.32 −86.13 1.1 1000 0.35 −48.9 11.22 101.34 0.04 17.89 0.32 −94.01 1.1 1100 0.35 −54.2 10.64 95.86 0.04 19.93 0.31 −101.7 1.1 1200 0.35 −59.55 10.0 90.82 0.05 22.11 0.30 −109.1 1.1 1300 0.34 −64.78 9.39 85.46 0.05 24.10 0.30 −116.4 1.1 1400 0.34 −69.93 8.93 80.15 0.05 24.62 0.29 −123.6 1.1 1500 0.33 −74.81 8.54 75.95 0.05 25.98 0.28 −130.9 1.1 1600 0.33 −79.82 8.07 72.26 0.05 27.67 0.27 −138.2 1.1 1700 0.32 −84.88 7.60 67.95 0.06 28.69 0.26 −145.7 1.1 1800 0.31 −89.81 7.32 63.43 0.06 28.33 0.25 −153.6 1.1 1900 0.30 −94.89 7.08 59.81 0.06 28.44 0.24 −162.0 1.1 2000 0.29 −100.3 6.74 56.09 0.07 29.27 0.23 −170.7 1.1 2100 0.28 −105.9 6.46 51.84 0.07 29.17 0.23 179.99 1.1 2200 0.26 −111.8 6.28 48.02 0.07 28.46 0.22 170.17 1.2 2300 0.25 −118.0 6.07 45.0 0.08 28.37 0.22 160.16 1.2 2400 0.24 −125.2 5.78 41.33 0.08 28.17 0.22 149.59 1.1

Product data sheet Rev. 02 — 25 May 2009 8 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

Table 10. Scattering parameters

IS = 81 mA; VS=9V; PD =−30 dBm; ZO=50Ω; T

f (MHz) s

Magnitude (ratio)

Angle (degree)

…continued

Magnitude (ratio)

=25°C.

amb

Angle (degree)

Magnitude (ratio)

Angle (degree)

Magnitude (ratio)

K factor

Angle (degree)

2500 0.22 −132.8 5.61 36.72 0.08 26.46 0.23 139.39 1.2 2600 0.21 −141.3 5.51 33.15 0.09 24.85 0.24 129.67 1.0 2700 0.21 −153.3 5.33 30.04 0.09 24.72 0.28 120.55 1.2 2800 0.07 −127.7 6.44 28.98 0.12 24.46 0.28 80.88 1.2 2900 0.19 −167.20 4.88 19.14 0.10 20.48 0.27 105.15 1.2 3000 0.18 178.11 4.78 16.89 0.10 19.71 0.30 96.35 1.2 3100 0.18 165.13 4.57 16.56 0.11 18.98 0.32 89.48 1.0

Product data sheet Rev. 02 — 25 May 2009 9 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

9. Package outline

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89

w M

123

0 2 4 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.6

1.4

OUTLINE VERSION

SOT89 TO-243 SC-62

0.48

0.35

0.53

0.40

IEC JEDEC JEITA

2.6

2.4

3.0

0.44

0.23

4.6

4.4

REFERENCES

1.8

1.4

1.5

1.2

0.8

0.13

EUROPEAN

PROJECTION

ISSUE DATE

06-03-16 06-08-29

4.25

3.75

Fig 11. Package outline SOT89 (SC-62)

Product data sheet Rev. 02 — 25 May 2009 10 of 13

NXP Semiconductors

BGA6589

MMIC wideband medium power ampliﬁer

10. Abbreviations

Table 11. Abbreviations

Acronym Description

CDPD Cellular Digital Packet Data IF Intermediate Frequency PCS Power Center Substation SMD Surface-Mounted Device SONET Synchronous Optical NETwork

11. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGA6589_2 20090525 Product data sheet - BGA6589_1 Modiﬁcations:

BGA6589_1 20030919 Product speciﬁcation - -

• The format of this data sheet has been redesigned to comply with the new identity guidelines of

NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Changed I

• Table 1: changed symbol V

• Table 5: changed symbol V

• Table 7: added row for V

from 84 mA to 81 mA throughout.

to VD.

to VD and added "on pin 1;" to Conditions.

DC device voltage.

• Section 8: added sentence.

• Figure 9: changed V

= 8 V to 9 V.

• Table 9: added 51 Ω to all value columns for resistor R1 and amended values of C3 and C4.

• Table 10: changed V

= 8 V to 9 V.

Product data sheet Rev. 02 — 25 May 2009 11 of 13

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BGA6589

MMIC wideband medium power ampliﬁer

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) andtitle. A short data sheet is intended for quick referenceonly and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or warranties, expressedor implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Deﬁnition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting valuesare stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 02 — 25 May 2009 12 of 13

NXP Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BGA6589

MMIC wideband medium power ampliﬁer

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 25 May 2009

Document identifier: BGA6589_2

NXP BGA6589 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Application information

9. Package outline

10. Abbreviations

11. Revision history

12. Legal information

12.1 Data sheet status

12.3 Disclaimers

12.4 Trademarks

13. Contact information

14. Contents