The BGA6289 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 3-pin SOT89plasticlowthermal
resistance SMD package.
The BGA6x89 series of medium power gain blocks are resistive feedback Darlington
configured amplifiers. Resistive feedback provides large bandwidth with high accuracy.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Broadband 50 Ω gain block
n 17 dBm power output
n SOT89 package
n Single supply voltage needed
1.3 Applications
n Broadband medium power gain blocks
n Small signal high linearity amplifiers
n Variable gain and high output power in combination with the BGA2031
n Cellular, PCS and CDPD
n IF/RF buffer amplifier
n Wireless data SONET
n Oscillator amplifier, final PA
n Drivers for CATV amplifier
NXP Semiconductors
1.4 Quick reference data
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
D
I
S
2
|
|s
21
NFnoise figuref = 1.95 GHz-4-dB
P
L1dB
DC device voltageon pin 1; IS =88mA-4.1-V
DC supply currentVS = 8 V; R
insertion power gainf = 1.95 GHz-13-dB
input power at 1 dB
gain compression
2.Pinning information
Table 2.Pinning
PinDescriptionSimplified outlineGraphic symbol
1RF_OUT/BIAS
2GND
3RF_IN
BGA6289
MMIC wideband medium power amplifier
= 47 Ω;
T
=25°C
j
f = 850 MHz-18-dBm
f = 1.95 GHz-16-dBm
bias
-88-mA
13
2
3.Ordering information
Table 3.Ordering information
Type numberPackage
BGA6289SC-62plastic surface-mounted package; collector pad for
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol ParameterConditionsMin MaxUnit
V
D
I
S
P
tot
T
stg
T
j
P
D
[1] Tsp is the temperature at the solder point of ground lead, pin 2.
DC device voltageon pin 1; RF input AC coupled-6.0V
DC supply current-150mA
total power dissipationTsp≤ 70 °C
storage temperature−65 +150 °C
junction temperature-150°C
drive power-15dBm
6.Thermal characteristics
Table 6.Thermal characteristics
SymbolParameterConditionsTypUnit
R
th(j-sp)
[1] Tsp is the temperature at the solder point of ground lead, pin 2.
thermal resistance from junction to solder point Tsp≤ 70 °C
BGA6289
MMIC wideband medium power amplifier
[1]
-800mW
[1]
100K/W
7.Characteristics
Table 7.Static characteristics
VS=8V; Tj=25°C; R
SymbolParameterConditionsMinTypMaxUnit
V
D
I
S
[1] VS= DC operating supply voltage applied to R
Table 8.Characteristics
VS = 8 V; IS = 88 mA; T
tone; Z
Symbol ParameterConditionsMinTypMaxUnit
2
|
|s
21
R
LIN
R
LOUT
[1]
=47
bias
Ω
DC device voltageon pin 1; IS =88mA-4.1-V
DC supply current798896mA
; see Figure 10
bias
=25°C; R
= ZS = 50Ω; unless otherwise specified; see Figure 10.
Fig 9.Supply current as a function of operating junction temperature; typical values
8.Application information
Figure 10 shows a typical application circuit for the BGA6289 MMIC. The device is
internally matched to 50 Ω, and therefore does not require any external matching. The
value of the input and output DC blocking capacitors C1 and C2 depends on the operating
frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to
fine tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor.
A 1 µF capacitor (C5) can be added for optimum supply decoupling. The external
components should be placed as close as possible to the MMIC. When using via holes,
use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias
resistor providing DC current stability with temperature.
100
I
S
(mA)
90
80
70
60
−4040−2006080
= 47 Ω.
bias
20
mgx428
(°C)
T
j
(2)
R1
V
S
mgx419
50 Ω
microstrip
L1
C1C2
3
2
V
D
1
C3
C4C5
50 Ω
microstrip
(1)
(1) Optional capacitor for optimum supply decoupling.
(2) R1 values at operating supply voltage:
VS = 6 V; R1 = 22 Ω.
VS = 8 V; R1 = 47 Ω.
VS = 12 V; R1 = 91 Ω.
Objective [short] data sheetDevelopmentThis document contains data from the objective specification for product development.
Preliminary [short] data sheet QualificationThis document contains data from the preliminary specification.
Product [short] data sheetProductionThis document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document may havechanged since this document was publishedand may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
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with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
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Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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