NXP BFT92 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
BFT92
PNP 5 GHz wideband transistor
Product specification November 1992
NXP Semiconductors Product specification
Fig.1 SOT23.
MSB003
Top view
12
3
PNP 5 GHz wideband transistor BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
PINNING
PIN DESCRIPTION
Code: W1p
1base
2emitter
3 collector
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
G
UM
Fnoise figure I
d
im
collector-base voltage open emitter 20 V
collector-emitter voltage open base 15 V
DC collector current 25 mA
total power dissipation up to Ts = 95 C; note 1 300 mW
transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz 5 GHz
feedback capacitance IC = 2mA; VCE = 10 V; f = 1 MHz 0.7 pF
maximum unilateral power gain IC = 14 mA; VCE = 10 V;
f = 500 MHz; T
= 5mA; VCE = 10 V; f = 500 MHz;
C
T
=25 C
amb
amb
=25 C
intermodulation distortion IC = 14 mA; VCE = 10 V; RL=75 ;
=150 mV; T
V
o
= 493.25 MHz
f
(pq-r)
amb
= 25 C;
18 dB
2.5 dB
60 dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
November 1992 2
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFT92
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter 20 V
collector-emitter voltage open base 15 V
emitter-base voltage open collector 2V
DC collector current 25 mA
peak collector current f 1 MHz 35 mA
total power dissipation up to Ts=95C; note 1 300 mW
storage temperature 65 150 C
junction temperature 175 C
thermal resistance from junction to
up to Ts=95 C; note 1 260 K/W
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
November 1992 3
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