NXP BFT92 Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

BFT92

PNP 5 GHz wideband transistor

Product specification November 1992

NXP Semiconductors Product specification

Fig.1 SOT23.

MSB003

Top view

12

3

PNP 5 GHz wideband transistor BFT92

DESCRIPTION

PNP transistor in a plastic SOT23
envelope.

It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,

PINNING

PIN DESCRIPTION

Code: W1p
1base
2emitter
3 collector

etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.

NPN complements are BFR92 and
BFR92A.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

f

T

C

re

G

UM

Fnoise figure I

d

im

collector-base voltage open emitter 20 V
collector-emitter voltage open base 15 V
DC collector current 25 mA
total power dissipation up to Ts = 95 C; note 1  300 mW
transition frequency IC = 14 mA; VCE = 10 V; f = 500 MHz 5  GHz
feedback capacitance IC = 2mA; VCE = 10 V; f = 1 MHz 0.7  pF
maximum unilateral power gain IC = 14 mA; VCE = 10 V;

f = 500 MHz; T

= 5mA; VCE = 10 V; f = 500 MHz;

C

T

=25 C

amb

amb

=25 C

intermodulation distortion IC = 14 mA; VCE = 10 V; RL=75 ;

=150 mV; T

V

o

= 493.25 MHz

f

(pq-r)

amb

= 25 C;

18  dB

2.5  dB

60  dB

Note

1. T

is the temperature at the soldering point of the collector tab.

s

November 1992 2

NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFT92

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134) .

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter 20 V
collector-emitter voltage open base 15 V
emitter-base voltage open collector 2V
DC collector current 25 mA
peak collector current f  1 MHz 35 mA
total power dissipation up to Ts=95C; note 1  300 mW
storage temperature 65 150 C
junction temperature  175 C

thermal resistance from junction to

up to Ts=95 C; note 1 260 K/W

soldering point

Note

is the temperature at the soldering point of the collector tab.

1. T

s

November 1992 3

NXP Semiconductors Product specification

G

UM

10

S

21

2

1S

11

2

–1S

22

2

–

----------------------------------------------------------

dB.log=

PNP 5 GHz wideband transistor BFT92

CHARACTERISTICS

T

= 25 C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

F noise figure I

V

o

collector cut-off current IE = 0; VCB = 10 V; 50 nA
DC current gain IC= 14 mA; VCE = 10 V 20 50 
transition frequency IC= 14 mA; VCE = 10 V;

 5  GHz

f = 500 MHz
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz  0.75  pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz  0.8  pF
feedback capacitance IC= 2 mA; VCE= 10 V; f = 1 MHz  0.7  pF
maximum unilateral power gain

(note 1)

IC= 14 mA; VCE = 10 V;

f = 500 MHz; T

= 5 mA; VCE = 10 V;

C

f = 500 MHz; T

amb

amb

= 25 C

= 25 C

 18  dB

 2.5  dB

output voltage note 2  150  mV

Notes

1. G

UM

2. d

= 60 dB (DIN 45004B); IC= 14 mA; VCE= 10 V; RL=75 ;

im

V

p=Vo

V

q=Vo

V

r=Vo

measured at f

is the maximum unilateral power gain, assuming S12 is zero and

at dim= 60 dB; fp= 495.25 MHz;

6 dB; fq= 503.25 MHz;

6dB; fr= 505.25 MHz;

= 493.25 MHz.

(pq-r)

November 1992 4

NXP Semiconductors Product specification

Fig.2 Intermodulation distortion test circuit.

L2 = L3 = 5 H Ferroxcube choke, catalogue
number 3122 108 20150.

L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.

handbook, halfpage

MEA919

16 Ω

L2

680 pF

300 Ω

DUT

L1

680 pF

680 pF

24 V

3.9 kΩ

820

Ω

75 Ω

75 Ω

390 Ω

L3

Fig.3 DC current gain as a function of collector

current.

VCE= 10 V; Tj=25 C.

handbook, halfpage

MEA347

0

100

75

25

0

10 20

–I (mA)

C

FE

h

50

30

Fig.4 Collector capacitance as a function of

collector-base voltage.

IE=ie= 0; f = 1 MHz; Tj= 25 C.

handbook, halfpage

010

1

0

0.8

MEA920

0.6

0.4

0.2

C

c

(pF)

–VCB(V)

20

Fig.5 Transition frequency as a function of

collector current.

VCE= 10 V; f = 500 MHz; Tj=25 C.

handbook, halfpage

0102030

6

0

2

4

MEA344

–I (mA)

C

f

T

(GHz)

PNP 5 GHz wideband transistor BFT92

November 1992 5

NXP Semiconductors Product specification

Fig.6 Minimum noise figure as a function of

collector current.

VCE= 10 V; Zs= opt.; f = 500 MHz; T

amb

=25 C.

handbook, halfpage

MEA921

025

5

0

1

2

3

4

5 101520

F

(dB)

I

C

(mA)

Fig.7 Minimum noise figure as a function of

frequency.

Ic= 2mA; VCE= 10 V; Zs=opt.; T

amb

=25 C.

handbook, halfpage

4

2

1

0

10

MEA465

110

3

F

(dB)

–1

f (GHz)

5

6

PNP 5 GHz wideband transistor BFT92

November 1992 6

NXP Semiconductors Product specification

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

IEC JEDEC JEITA

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface-mounted package; 3 leads SOT23

PNP 5 GHz wideband transistor BFT92

PACKAGE OUTLINE

November 1992 7

NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFT92

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This doc ume nt contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.

In no event shall NXP Semiconductors be liable for any
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other legal theory.

Notwithstanding any damages that customer might incur
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aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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Applications  Applications that ar e described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

November 1992 8

NXP Semiconductors Product specification

PNP 5 GHz wideband transistor BFT92

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applicat ions and
products using NXP Semiconductors products in or de r to
avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In cas e an
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Semiconductors hereby expressly objects to applying the
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purchase of NXP Semiconductors products by customer.

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Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
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In the event that customer uses the product for design-in
and use in automotive applications to automotive
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Semiconductors’ specifications such use shall be solely at
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product claims resulting from cus tom er d esign and use o f
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.

No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
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other industrial or intellectual property rights .

November 1992 9

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this document does not form part of any quotation or cont ra ct, is believed to be accurate and reliable and may be change d
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Printed in The Netherlands R77/02/pp10 Date of release: November 1992