NXP BFS20W Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D102

BFS20W

NPN medium frequency transistor

Product data sheet 1999 Apr 21

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20W

FEATURES

• Low current (max. 25 mA)

• Low voltage (max. 20 V).

• Very low feedback capacitance (typ . 350 fF).

APPLICATIONS

• IF and VHF applications in thick and thin-film circuits.

DESCRIPTION

NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.

MARKING

T YPE NUMBER MARKING CODE

(1)

BFS20W N1∗

Note

1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

1

1

2

MAM062

Fig.1 Simplified outline (SOT323; SC-70) and

symbol.

3

2

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 4 V
collector current (DC) − 25 mA
peak collector current − 25 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 200 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

1999 Apr 21 2

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20W

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Refer to SOT323 (SC-70) standard mounting conditions.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

BE

C

c

C

re

f

T

thermal resistance from junction to ambient note 1 625 K/W

collector cut-off current IE = 0; VCB = 20 V − − 100 nA

IE = 0; VCB = 20 V; Tj = 100 °C − − 10 µA
emitter cut-off current IC = 0; VEB = 4 V − − 100 nA
DC current gain IC = 7 mA; VCE = 10 V 40 85 −
base-emitter voltage IC = 7 mA; VCE = 10 V − 740 900 mV
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1 − pF
feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 350 − fF
transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz 360 470 − MHz

1999 Apr 21 3

NXP Semiconductors Product data sheet

MGR832

h

NPN medium frequency transistor BFS20W

3

10

dbook, halfpage

h

FE

2

10

(1)

(2)
(3)

MGR830

10

1

−1

10

11010

IC (mA)

VCE = 10 V.
(1) T

= 150 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= −55 °C.

amb

Fig.2 DC current gain as a function of collector

current; typical values.

(1)
(2)
(3)

IC (mA)

MGR831

2

10

3

10

handbook, halfpage

V

CEsat

(mV)

2

10

2

10

−1

10

110

IC/IB = 10.
(1) T

= 100 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= −55 °C.

amb

Fig.3 Collector-emitter saturation voltage as a

function of collector current; typical values.

1000

handbook, halfpage

V

BE

(mV)

800

25

andbook, halfpage

I

(1)

C

(mA)

20

(2)

(1)

(2)

(3)

MGR833

15

600

(3)

400

200

−1

10

VCE = 10 V.
(1) T

amb

(2) T

amb

(3) T

amb

= −100 °C.
= 25 °C.
= 150 °C.

11010

IC (mA)

2

Fig.4 Base-emitter voltage as a function of

collector current; typical values.

10

5

0

010

T

= 25 °C.

amb

2468

(1) IB = 280 µA.
(2) IB = 230 µA.

= 180 µA.

(3) I

B

Fig.5 Collector current as a function of

collector-emitter voltage; typical values.

(4)

(5)

(6)

(4) IB = 130 µA.
(5) IB = 80 µA.

= 30 µA.

(6) I

B

VCE (V)

1999 Apr 21 4

NXP Semiconductors Product data sheet

3

NPN medium frequency transistor BFS20W

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT32

D

y

3

A

12

e

b

1

p

e

B

w

M

E

H

E

A

1

detail X

AB

Q

c

L

p

X

v

M

A

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC EIAJ

E

1.35

1.15

REFERENCES

1.3

e

e1H

0.65

2.2

2.0

L

Qwv

p

E

0.45

0.15

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT323 SC-70

1999 Apr 21 5

NXP Semiconductors Product data sheet

NPN medium frequency transistor BFS20W

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

1999 Apr 21 6

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.

Printed in The Netherlands 115002/00/01/pp7 Date of release: 1999 Apr 21 Document order number: 9397 750 05696