NXP BFS20W Schematic [ru]
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D102
BFS20W
NPN medium frequency transistor
Product data sheet 1999 Apr 21
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ . 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
MARKING
T YPE NUMBER MARKING CODE
(1)
BFS20W N1∗
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
3
2
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 4 V
collector current (DC) − 25 mA
peak collector current − 25 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
1999 Apr 21 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
c
C
re
f
T
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE = 0; VCB = 20 V − − 100 nA
IE = 0; VCB = 20 V; Tj = 100 °C − − 10 µA
emitter cut-off current IC = 0; VEB = 4 V − − 100 nA
DC current gain IC = 7 mA; VCE = 10 V 40 85 −
base-emitter voltage IC = 7 mA; VCE = 10 V − 740 900 mV
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1 − pF
feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz − 350 − fF
transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz 360 470 − MHz
1999 Apr 21 3
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