BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Rev. 05 — 23 November 2007 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
2 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
PINNING
DESCRIPTION
PIN
BFG67 BFG67/X BFG67/XR
1 collector collector collector
2 base emitter emitter
3 emitter base base
4 emitter emitter emitter
handbook, 2 columns
12
Top view
34
MSB014
handbook, 2 columns
Top view
43
12
MSB035
MARKING
TYPE NUMBER CODE
BFG67 (Fig.1) V3%
BFG67/X (Fig.1) %MV
Fig.1 Simplified outline
SOT143B.
Fig.2 Simplified outline
SOT143R.
BFG67/XR (Fig.2) V26
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure Γ
collector-emitter voltage open base − 10 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C − 300 mW
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz 0.5 − pF
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz 8 − GHz
maximum unilateral power
gain
IC= 15 mA; VCE=8V;
T
=25°C; f = 1 GHz
amb
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f = 1 GHz
= Γ
; IC= 5 mA; VCE=8V;
opt
=25°C; f = 2 GHz
T
Γ
T
s
amb
s
amb
17 − dB
1.3 − dB
2.2 − dB
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
3 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 65 °C; see Fig.3; note 1 − 380 mW
storage temperature range −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 290 K/W
Note
is the temperature at the soldering point of the collector pin.
1. T
s
150
MBC984 - 1
o
Ts(
C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.3 Power derating curve.
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
4 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F noise figure Γ
collector leakage current VCB=5V; IE=0 −−50 nA
DC current gain IC= 15 mA; VCE= 5 V 60 100 −
transition frequency IC= 15 mA; VCE= 8 V; f = 500 MHz − 8 − GHz
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.3 − pF
feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
maximum unilateral power
gain; note 1
IC= 15 mA; VCE=8V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=8V;
C
T
=25°C; f = 2 GHz
amb
= Γ
; IC= 5 mA; VCE=8V
opt
=25°C; f = 1 GHz
= Γ
; IC= 15 mA; VCE=8V;
opt
=25°C; f = 1 GHz
= 5 mA; VCE=8V;
= 25°C; f = 2 GHz; ZS=60Ω
= 15 mA; VCE=8V;
=25°C; f = 2 GHz; ZS=60Ω
T
Γ
T
I
T
I
T
s
amb
s
amb
C
amb
C
amb
− 17 − dB
− 10 − dB
− 1.3 − dB
− 1.7 − dB
− 2.5 − dB
− 3 − dB
Note
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dB.log=
2
22
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
5 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
120
handbook, halfpage
h
FE
80
40
0
0
VCE=5V.
20 40
I (mA)
C
Fig.4 DC current gain as a function of collector
current.
MBB301
V
CB
MBB302
(V)
0.8
handbook, halfpage
C
re
(pF)
0.6
0.4
0.2
0
60
0
IC=ic= 0; f= 1 MHz.
4
81216
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020 40
VCE= 8 V; T
=25°; f = 2 GHz.
amb
Fig.6 Transition frequency as a function of
collector current.
30
MBB303
I (mA)
C
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
VCE= 8 V; f = 1 GHz.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
10 20 40
G
Fig.7 Gain as a function of collector current.
max
30
MBB304
IC (mA)
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
6 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
50
handbook, halfpage
gain
(dB)
40
30
20
MSG
10
0
10
2
10
VCE= 8 V; IC= 5 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.8 Gain as a function of frequency.
MBB305
50
handbook, halfpage
gain
MBB306
(dB)
40
G
UM
30
20
G
max
3
10
f (MHz)
4
10
10
0
10
G
UM
MSG
G
max
2
10
3
10
f (MHz)
4
10
VCE= 8 V; IC=15mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.9 Gain as a function of frequency.
50
handbook, halfpage
gain
(dB)
40
30
G
MSG
20
10
0
10
2
10
VCE= 8 V; IC= 30 mA.
GUM= maximum unilateral power gain;
MSG = maximum stable gain;
= maximum available gain.
G
max
Fig.10 Gain as a function of frequency.
UM
MBB307
4
handbook, halfpage
F
MBB308
f = 2 GHz
(dB)
3
1 GHz
900 MHz
2
G
max
500 MHz
1
3
10
f (MHz)
4
10
0
101
I (mA)
C
100
VCE=8V.
Fig.11 Minimum noise figure as a function of
collector current.
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
7 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
4
handbook, halfpage
F
(dB)
3
2
1
0
10
VCE=8V.
2
10
3
I = 30 mA
C
15 mA
5 mA
f (MHz)
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
500 8 5
MBB309
4
10
stability
circle
2
0.5
unstable region
1
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
0.95 0.455 33.8 0.288
ZO=50Ω.
0.2
+ j
0
− j
0.2
3 dB
0.5
1.5 dB
2 dB
F
=0.95 dB
min
OPT
10.2 10520.5
2
1
5
10
∞
10
5
MBB317
Fig.13 Noise circle figure.
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
8 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
1000 8 5
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
1.3 0.375 65.9 0.304
unstable
region
0.2
+ j
0
− j
stability
circle
0.5
0.2 1 10520.5
2 dB
1
F
min
=1.3 dB
OPT
2
5
10
∞
10
BFG67/X
f
(MHz)
V
(V)
CE
I
C
(mA)
2000 8 5
Noise Parameters
F
min
(dB)
Gamma (opt)
Rn/50
(mag) (ang)
2.2 0.391 136.5 0.184
Average Gain Parameters
G
MAX
(dB)
Gamma (max)
(mag) (ang)
12 0.839 −170
ZO=50Ω.
+ j
– j
0.2
0
0.2
0.2
G
max
=12dB
3 dB
4 dB
0.5
1
Fig.14 Noise circle figure.
1
0.5
F
=2.2 dB
min
OPT
11 dB
10 dB
9 dB
8 dB
0.5
3 dB
4 dB
5 dB
5
2
MBB316
2
5
10
101520.2 0.5
∞
10
5
2
ZO=50Ω.
1
Fig.15 Noise circle figure.
MBB315
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
9 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
handbook, full pagewidth
VCE= 8 V; IC= 15 mA; ZO=50Ω.
1
0.5
0.2
+ j
0
− j
0.2
3 GHz
10.2 10520.5
0.5
1
2
40 MHz
2
Fig.16 Common emitter input reflection coefficient (S11).
5
10
∞
10
5
MBB314
handbook, full pagewidth
VCE= 8 V; IC= mA; ZO=50Ω.
90°
120°
150°
40 MHz
40 20
50 30 10
180°
3 GHz
60°
30°
+ϕ
0°
−ϕ
150°
120°
60°
90°
30°
MBB313
Fig.17 Common emitter forward transmission coefficient (S21).
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
10 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
handbook, full pagewidth
handbook, full pagewidth
VCE= 8 V; IC= 15 mA.
1
0.5
0.2
+ j
0
− j
0.2
0.5
10.2 10520.5
3 GHz
1
2
5
10
∞
40 MHz
10
5
2
MBB312
Fig.18 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
VCE= 8 V; IC= 15 mA.
90°
120°
150°
0.4 0.2
0.5 0.3 0.1
180°
150°
120°
40 MHz
90°
60°
3 GHz
60°
MBB311
Fig.19 Common emitter output reflection coefficient (S22).
30°
+ϕ
0°
−ϕ
30°
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
11 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
L
b
1
e
1
detail X
p
c
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
0 1 2 mm
scale
A
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
1.9
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
e
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
NXP Semiconductors Product specification
Rev. 05 - 23 November 2007
12 of 14
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
Plastic surface mounted package; reverse pinning; 4 leads SOT143R
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
43
Q
A
A
1
c
12
L
b
1
e
1
detail X
p
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
0 1 2 mm
scale
A
1
A
max
0.1
b
c
D
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
E
3.0
1.4
2.8
1.2
REFERENCES
1.9
e
1.7
H
L
E
1
2.5
2.1
0.55
0.25
p
0.45
0.25
EUROPEAN
PROJECTION
e
ywvQ
0.1 0.10.2
ISSUE DATE
97-03-10
NXP Semiconductors
Rev. 05 - 23 November 2007
13 of 14
Legal information
Data sheet status
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
[1][2]
Product status
Definitions
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internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shallhaveno liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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[3]
http://www.nxp.com.
Definition
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limitingvalues are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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at
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
NXP Semiconductors
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Revision history
Table 1. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFG67_X_XR_N_5 20071123 Product data sheet - BFG67_X_XR_4
Modifications:
BFG67_X_XR_4
(9397 750 04349)
BFG67_SERIES_3 19950901 Product specification - BFG67_SERIES_2
BFG67_SERIES_2 - Product specification - BFG67_SERIES_1
BFG67_SERIES_1 - - - -
• Page 2; Table Marking code; row 1 and 2 code changed
19981002 Product specification - BFG67_SERIES_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 November 2007
Document identifier: BFG67_X_XR_N_5
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