DISCRETE SEMICONDUCTORS
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
FEATURES
• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance.
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN DESCRIPTION
handbook, halfpage
Marking code: P4.
1 emitter
2 base
3 emitter
4 collector
43
21
Top view
MSB842
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F noise figure I
collector-base voltage open emitter −−10 V
collector-emitter voltage open base −−4.5 V
collector current (DC) − 10 12 mA
total power dissipation Ts≤ 110 °C −−54 mW
DC current gain IC= 10 mA; VCE=2V; Tj=25°C 5080120
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz − 45 − fF
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz; T
maximum power gain IC= 10 mA; VCE= 2 V; f = 2 GHz; T
= 1 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ
C
=25°C − 22 − GHz
amb
=25°C − 21 − dB
amb
opt
− 1.2 − dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11 2
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 10 V
collector-emitter voltage open base − 4.5 V
emitter-base voltage open collector − 1V
collector current (DC) − 12 mA
total power dissipation Ts≤ 110 °C; note 1; see Fig.2 − 54 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
handbook, halfpage
(mW)
thermal resistance from junction to soldering point 750 K/W
120
MGD960
Ts (°C)
60
P
tot
40
20
0
0
40 80 160
Fig.2 Power derating curve.
1998 Mar 11 3
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
max
S
21
F noise figure I
P
L1
ITO third order intercept point I
collector-base breakdown voltage IC= 2.5 µA; IE=0 10 −−V
collector-emitter breakdown
IC= 1 mA; IB= 0 4.5 −−V
voltage
emitter-base breakdown voltage IE= 2.5 µA; IC=0 1 −−V
collector-base leakage current IE= 0; VCB= 4.5 V −−15 nA
DC current gain IC= 10 mA; VCE= 2 V; see Fig.3 50 80 120
collector capacitance IE=ie= 0; VCB=2V; f=1MHz − 220 − fF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 400 − fF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz;
− 45 − fF
see Fig.4
transition frequency IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Fig.5
amb
maximum power gain; note 1 IC= 10 mA; VCE= 2 V; f = 2 GHz;
T
=25°C; see Figs 7 and 8
amb
insertion power gain I
2
= 10 mA; VCE= 2 V; f = 2 GHz;
C
T
=25°C; see Fig.8
amb
= 1 mA; VCE=2V;
C
f = 900 MHz; ΓS= Γ
I
= 1 mA; VCE= 2 V; f = 2 GHz;
C
output power at 1 dB gain
compression
ΓS= Γ
IC= 10 mA; VCE= 2 V; f = 2 GHz;
ZS=Z
C
ZS=Z
; see Fig.13
opt
; ZL=Z
S opt
= 10 mA; VCE= 2 V; f = 2 GHz;
; ZL=Z
S opt
; see Fig.13
opt
; note 2
L opt
; note 2
L opt
− 22 − GHz
− 21 − dB
− 18 − dB
− 0.9 − dB
− 1.2 − dB
− 5 − dBm
− 15 − dBm
Notes
1. G
is the maximum power gain, if K > 1. If K < 1 then G
max
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11 4
= MSG; see Figs 6, 7 and 8.
max
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
120
handbook, halfpage
h
FE
100
80
60
40
20
0
0 4 12 168
(1) VCE=3V.
(2) VCE=2V.
(3) VCE=1V.
MGG717
(1)
(2)
(3)
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
100
handbook, halfpage
C
re
(fF)
80
60
40
20
0
01 5
IC= 0; f= 1 MHz.
23 4
VCB (V)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGG718
25
handbook, halfpage
f
T
(GHz)
20
15
10
5
0
11010
VCE= 2 V; f = 2 GHz; T
amb
IC (mA)
=25°C.
MGG719
2
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Mar 11 5
30
handbook, halfpage
MSG
(dB)
20
10
0
048 1612
VCE= 2 V; f = 900 MHz.
IC (mA)
Fig.6 Maximum stable gain as a function of
collector current; typical values.
MGG720
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
30
handbook, halfpage
gain
(dB)
20
10
0
0812416
VCE= 2 V; f = 2 GHz.
MSG
G
IC (mA)
Fig.7 Gain as a function of collector current;
typical values.
MGG721
max
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
IC= 10 mA; VCE=2V.
S
2
MSG
21
10
Fig.8 Gain as a function of frequency;
typical values.
3
f (MHz)
MGG722
4
10
handbook, full pagewidth
IC= 10 mA; VCE= 2 V; Zo=50Ω.
90°
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
180°
1
135°
0
−135°
0.5
0.2
0.2 0.5 1 2 5
3 GHz
0.2
0.5
1
−90°
2
40 MHz
2
45°
5
5
−45°
MGG724
Fig.9 Common emitter input reflection coefficient (S11); typical values.
1998 Mar 11 6
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
handbook, full pagewidth
IC= 10 mA; VCE=2V.
90°
135°
180°
50 40 30 20 10
40 MHz
−135°
3 GHz
−90°
45°
0°
−45°
MGG725
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
handbook, full pagewidth
IC= 10 mA; VCE=2V.
90°
135°
0.1 0.08 0.06 0.04 0.02
180°
−135°
3 GHz
40 MHz
−90°
45°
0°
−45°
MGG726
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
1998 Mar 11 7
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
handbook, full pagewidth
IC= 10 mA; VCE= 2 V; Zo=50Ω.
90°
1.0
0.8
0.6
0.4
0.2
0°
0
1.0
180°
1
135°
0
−135°
0.5
0.2
0.2 0.5 1 2 5
0.2
0.5
1
−90°
3 GHz
45°
2
5
40 MHz
5
2
−45°
MGG727
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
V
= 2 V; typical values.
CE
f
(MHz)
I
C
(mA)
F
min
(dB)
Γ
mag
Γ
angle
900 1 0.8 0.73 11.2 0.56
2 0.9 0.58 10.1 0.43
4 1.1 0.40 10.1 0.33
6 1.3 0.28 11.0 0.30
8 1.5 0.20 8.0 0.30
10 1.7 0.14 10.5 0.27
12 1.9 0.06 10.1 0.25
14 2.1 0.05 14.2 0.26
2000 1 1.2 0.64 35.7 0.57
2 1.2 0.50 35.8 0.44
4 1.4 0.34 34.4 0.37
6 1.6 0.25 33.7 0.34
8 1.8 0.17 34.5 0.35
10 2.0 0.12 35.8 0.34
12 2.2 0.05 38.0 0.35
14 2.4 0.03 44.8 0.34
r
(Ω)
n
handbook, halfpage
3
F
min
(dB)
2
1
0
0841216
(1) f = 2 GHz; VCE=2V.
(2) f = 900 MHz; VCE=2V.
(1)
(2)
MGG723
IC (mA)
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11 8
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 19.42 aA
2 BF 145.0 −
3 NF 0.993 −
4 VAF 31.12 V
5 IKF 125.0 mA
6 ISE 123.6 fA
7 NE 3.000 −
8 BR 11.37 −
9 NR 0.985 −
10 VAR 1.874 V
11 IKR 50.00 mA
12 ISC 199.6 aA
13 NC 1.546 −
14 RB 35.00 Ω
15 IRB 0.000 A
16 RBM 15.00 Ω
17 RE 432.0 mΩ
18 RC 4.324 Ω
(1)
19
20
21
(1)
(1)
XTB 1.500 −
EG 1.110 eV
XTI 3.000 −
22 CJE 128.0 fF
23 VJE 900.0 mV
24 MJE 0.346 −
25 TF 4.122 ps
26 XTF 68.20 −
27 VTF 2.004 V
28 ITF 0.627 A
29 PTF 0.000 deg
30 CJC 56.68 fF
31 VJC 556.9 mV
32 MJC 0.207 −
33 XCJC 0.500 −
(1)
34
35
36
37
(1)
(1)
(1)
TR 0.000 ns
CJS 274.8 fF
VJS 418.3 mV
MJS 0.239 −
38 FC 0.550 −
SEQUENCE No. PARAMETER VALUE UNIT
(2)(3)
39
40
41
(2)
(3)
C
bp
R
sb1
R
sb2
145 fF
25 Ω
19 Ω
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity Cbp in series with substrate
resistance R
between B′ and E′.
sb1
3. Bonding pad capacity Cbp in series with substrate
resistance R
handbook, halfpage
L1 L2
B
C
be ce
QLB= 50; QLE= 50; QL
= scaling frequency = 1 GHz.
f
c
between C′ and E′.
sb2
C
cb
E'
L3
E
(f)=QL
B,E
B,E
√(f/fc)
CB' C'
C
MGD956
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION VALUE UNIT
C
be
C
cb
C
ce
80 fF
2fF
80 fF
L1 1.1 nH
L2 1.1 nH
L3 (note 1) 0.25 nH
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11 9
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads SOT343R
w M
D
y
e
43
21
b
B
p
e
b
1
1
E
H
E
A
A
1
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
mm
OUTLINE
VERSION
SOT343R
1.1
0.8
A
max
0.1
b
p
0.4
0.3
IEC JEDEC EIAJ
b
1
0.7
0.5
cD
0.25
2.2
0.10
1.8
E
1.35
1.3
1.15
REFERENCES
e
UNIT
1998 Mar 11 10
H
L
e
E
1
2.2
0.45
2.0
0.15
Qwv
p
0.23
0.13
0.2y0.10.21.15
EUROPEAN
PROJECTION
ISSUE DATE
97-05-21
Philips Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 11 11
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© Philips Electronics N.V. 1998 SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 125104/00/04/pp12 Date of release: 1998 Mar 11 Document order number: 9397 750 03388
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