BFG25A/X
NPN 5 GHz wideband transistor
Rev. 04 — 27 November 2007 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
2 of 12
NPN 5 GHz wideband transistor BFG25A/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
handbook, 2 columns
34
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
PINNING
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
12
Top view
Marking code: %MU.
MSB014
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage −−8V
collector-emitter voltage −−5V
collector current (DC) −−6.5 mA
total power dissipation Ts≤ 165 °C −−32 mW
DC current gain IC= 0.5 mA; VCE=1V 5080200
transition frequency IC= 1 mA; VCE=1V;
f = 500 MHz; T
amb
=25°C
maximum unilateral power gain IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE=1V;
C
f = 1 GHz; Γ = Γ
I
= 1 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
opt
; T
amb
amb
=25°C
; T
opt
=25°C
amb
=25°C
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
3 of 12
NPN 5 GHz wideband transistor BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 8V
collector-emitter voltage open base − 5V
emitter-base voltage open collector − 2V
collector current (DC) − 6.5 mA
total power dissipation Ts≤ 165 °C; note 1 − 32 mW
storage temperature −65 150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point note 1 320 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
re
f
T
G
UM
F noise figure I
Note
1. G
collector leakage current IE= 0; VCB=5V −−50 µA
DC current gain IC= 0.5 mA; VCE=1V 5080200
feedback capacitance IC=ic= 0; VCB= 1 V; f = 1 MHz − 0.21 0.3 pF
transition frequency IC= 1 mA; VCE=1V;
T
=25°C; f = 500 MHz
amb
maximum unilateral power gain
(note 1)
is the maximum unilateral power gain, assuming S12 is zero and
UM
IC= 0.5 mA; VCE=1V;
f = 1 GHz; T
= 0.5 mA; VCE= 1 V; f = 1 GHz;
C
Γ = Γ
I
Γ = Γ
; T
opt
= 1 mA; VCE= 1 V; f = 1 GHz;
C
; T
opt
amb
amb
amb
=25°C
=25°C
=25°C
G
UM
3.5 5 − GHz
− 18 − dB
− 1.8 − dB
− 2 − dB
10 log
--------------------------------------------------------------
1
S
–
11
2
S
21
2
1
–
dB=
2
S
22
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
4 of 12
NPN 5 GHz wideband transistor BFG25A/X
40
handbook, halfpage
P
tot
(mW)
30
20
10
0
0 50 100 200
150
Fig.2 Power derating curve.
MRC038 - 1
Ts (oC)
100
handbook, halfpage
h
FE
80
60
40
20
0
10
VCE=1V.
3
2
10
1
110
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
MCD138
10
0.3
handbook, halfpage
C
re
(pF)
0.2
0.1
0
0
IC=ic= 0; f= 1 MHz.
246
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MCD139
V (V)
CB
handbook, halfpage
6
f
T
(GHz)
4
2
0
0
VCE= 1 V; f = 500 MHz; T
12 4
amb
=25°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
3
MCD140
I (mA)
C
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
5 of 12
NPN 5 GHz wideband transistor BFG25A/X
30
handbook, halfpage
G
gain
(dB)
20
10
0
VCE= 1 V; f = 500 MHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
0.5 1.5 2.0
0 1.0 2.5
UM
MSG
Fig.6 Gain as a function of collector current;
typical values.
MCD141
I (mA)
C
20
handbook, halfpage
gain
(dB)
15
10
5
0
0 1.0 2.5
0.5 1.5 2.0
VCE= 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
Fig.7 Gain as a function of collector current;
typical values.
MCD142
I (mA)
C
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
IC= 0.5 mA; VCE=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
2
Fig.8 Gain as a function of frequency;
typical values.
MCD143
3
10
f (MHz)
4
10
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10 10
IC= 1 mA; VCE=1V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
G
UM
MSG
2
10
3
f (MHz)
MCD144
4
10
Fig.9 Gain as a function of frequency;
typical values.
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
6 of 12
NPN 5 GHz wideband transistor BFG25A/X
handbook, halfpage
4
F
(dB)
3
2
1
0
−1
10
VCE=1V.
f = 2 GHz
1 GHz
500 MHz
110
IC (mA)
Fig.10 Minimum noise figure as a function of
collector current; typical values.
MCD145
handbook, halfpage
4
F
(dB)
3
2
1
0
10
VCE=1V.
IC = 2 mA
1 mA
0.5 mA
2
3
10
f (MHz)
Fig.11 Minimum noise figure as a function of
frequency; typical values.
MCD146
4
10
handbook, full pagewidth
0.5
0.2
+
j
0
– j
0.2
IC= 1 mA; VCE= 1 V; f = 500 MHz; ZO=50Ω; Maximum stable gain = 15.6 dB; F
unstable region
0.5
MSG
15.6 dB
14 dB
12 dB
Fig.12 Common emitter noise figure circles; typical values.
1
2
6 dB
4 dB
2.5 dB
101520.50.2
*
2
1
= 1.9 dB; Γ
min
= 0.85, 5°; Rn/50 = 2.4.
opt
5
5
MCD147
stability
circle
10
∞
F = 1.9 dB
10
OPT
min
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
7 of 12
NPN 5 GHz wideband transistor BFG25A/X
handbook, full pagewidth
0.5
0.2
+
j
0
– j
0.2
IC= 1 mA; VCE= 1 V; f = 1000 MHz; ZO=50Ω; Maximum stable gain = 12.4 dB; F
unstable region
0.5
0.5 10.2 1052
MSG
12.4 dB
11 dB
9 dB
Fig.13 Common emitter noise figure circles; typical values.
1
2
stability
6 dB
4 dB
3 dB
*
circle
5
10
OPT
F = 2 dB
min
∞
10
5
2
1
= 2 dB; Γ
min
MCD148
= 0.78, 14°; Rn/50 = 2.6.
opt
handbook, full pagewidth
0.5
unstable region
0.2
+ j
0
0
– j
0.2
0.5
IC= 1 mA; VCE= 1 V; f = 2000 MHz; ZO=50Ω; Maximum stable gain = 8.9 dB; F
0.5 10.2 1052
MSG
9 dB
7.5 dB
6 dB
Fig.14 Common emitter noise figure circles; typical values.
1
6 dB
10.2 10520.5
1
4 dB
3 dB
= 2.4 dB; Γ
min
stability
circle
2
F = 2.4 dB
*
2
MCD149
= 0.72, 38°; Rn/50 = 1.9.
opt
OPT
min
5
10
∞
10
5
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
8 of 12
NPN 5 GHz wideband transistor BFG25A/X
handbook, full pagewidth
IC= 1 mA; VCE= 1 V; Zo=50Ω.
1
0.5
0.2
+ j
0
– j
0.2
0.5
0.5 10.2 1052
3 GHz
1
2
40 MHz
2
5
10
∞
10
5
MCD150
Fig.15 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
IC= 1 mA; VCE=1V.
o
90
o
45
o
0
54321
_
o
45
MCD151
180
o
135
3 GHz
o
40 MHz
_
o
135
_
o
90
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
9 of 12
NPN 5 GHz wideband transistor BFG25A/X
o
90
handbook, full pagewidth
IC= 1 mA; VCE=1V.
handbook, full pagewidth
180
o
135
3 GHz
o
_
o
135
0.10.20.30.40.5
40 MHz
_90o
_
45
45
MCD153
o
o
0
o
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
IC= 1 mA; VCE= 1 V; Zo=50Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
0.2
+ j
0
– j
0.2
0.5
0.5 10.2 1052
3 GHz
2
1
40 MHz
MCD152
5
10
∞
10
5
NXP Semiconductors Product specification
Rev. 04 - 27 November 2007
10 of 12
NPN 5 GHz wideband transistor BFG25A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads SOT143B
D
y
e
b
p
B
w M
E
v M
A
B
H
E
A
X
34
Q
A
A
1
21
b
1
e
1
detail X
L
c
p
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
0 1 2 mm
scale
A
1
A
max
0.1
b
c
D
3.0
1.4
2.8
1.2
REFERENCES
E
b
0.48
0.38
1
p
0.88
0.15
0.78
0.09
IEC JEDEC EIAJ
1.9
e
1.7
H
L
E
1
2.5
2.1
0.45
0.15
p
0.55
0.45
EUROPEAN
PROJECTION
e
ywvQ
0.1 0.10.2
ISSUE DATE
97-02-28
NXP Semiconductors
Rev. 04 - 27 November 2007
11 of 12
Legal information
Data sheet status
BFG25A/X
NPN 5 GHz wideband transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
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NXP Semiconductors
BFG25A/X
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFG25AX_N_4 20071127 Product data sheet - BFG25AX_3
Modifications:
BFG25AX_3
(9397 750 02767)
BFG25AX_2 19950901 Product specification - BFG25AX_1
BFG25AX_1 19921101 Product specification - -
• Fig. 1 on page 2; Figure note changed
19971029 Product specification - BFG25AX_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 November 2007
Document identifier: BFG25AX_N_4
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