NXP BFG21W Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
M3D124
BFG21W
UHF power transistor
Product specification
Supersedes data of 1997 Nov 21
1998 Jul 06
NXP Semiconductors Product specification
Fig.1 Simplified outline SOT343R.
Marking code: P1.
handbook, halfpage
Top view
MSB842
21
43
UHF power transistor BFG21W
FEATURES
High power gain
High efficiency
1.9 GHz operating area
Linear and non-linear operation.
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applica tions
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
PIN DESCRIPTION
1, 3 emitter
2base
4 collector
QUICK REFERENCE DATA
RF performance at T
60 C in a common emitter test circuit.
s
MODE OF OPERATION
Pulsed class-AB; <1:2; t
f
(GHz)
=5ms 1.9 3.6 26 10 typ.55
p
V
(V)
CE
P
L
(dBm)
G
(dB)
p
(%)
C
1998 Jul 06 2
NXP Semiconductors Product specification
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
At temperature stabilizatio n solder point has been reached.
handbook, full pagewidth
10
3
10
2
10
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
MGM219
R
th
(K/W)
tp (s)
t
p
t
p
T
P
t
T
δ =
δ =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
UHF power transistor BFG21W
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134 ) .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
THERMAL CHARACTERISTICS
collector-base voltage open emitter 15 V
collector-emitter voltage open base 4.5 V
emitter-base voltage open collector 1V
collector current (DC) 500 mA
total power dissipation Ts 60 C; note 1 600 mW
storage temperature 65 +150 C
operating junction temperature 150 C
is the temperature at the soldering point of the emitter pins.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
thermal resistance from junction to
Ts 60 C; P
soldering point
is the temperature at the soldering point of the emitter pins.
s
= 600 mW; note 1 150 K/W
tot
1998 Jul 06 3
NXP Semiconductors Product specification
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
Pulsed, class-AB operation; <1:2; tp=5ms.
f=1.9GHz; V
CE
=3.6V; ICQ= 1 mA; tuned at PL=26dBm.
handbook, halfpage
5
16
8
12
4
0
80
40
60
20
0
10 30
MGM220
15 20 25
PL (dBm)
η
C
(%)
η
C
G
p
(dB)
G
p
UHF power transistor BFG21W
CHARACTERISTICS
T
=25C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
C
c
C
re
f
T
APPLICATION INFORMATION
RF performance at T
collector-base breakdown volt a ge open emitter; IC=0.1mA 15 V
collector-emitter breakdown voltage open base; IC=10mA 4.5 V
collector-emitter breakdown voltage RBE<1k, IC=10mA 10 V
emitter-base breakdown voltage open collec tor; IE=0.1mA 1 V
collector leakage current VCE=5V; VBE=0 10 A
DC current gain IC=200mA; VCE=2V 40 100
collector capacitance IE=ie=0; VCB=3V; f=1MHz 3pF
feedback capacitance IC=0; VCB=3.6V; f=1MHz 1.5 pF
transition frequency IC=200mA; VCE=3.6V;
18 GHz
f = 700 MHz
60 C in a common emitter test circuit (see Figs 4 a nd 5).
s
MODE OF OPERATION
Pulsed; class-AB; <1:2; t
f
(GHz)
=5ms 1.9 3.6 1 26 10 typ. 55
p
V
(V)
Ruggedness in class-AB operation
The transistor is capable of withs tandi ng a load mis match
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions: =1:2;
= 5 ms; f = 1.9 GHz at VCE=4.5V.
t
p
CE
I
CQ
(mA)
P
L
(dBm)
G
(dB)
p
C
(%)
1998 Jul 06 4
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