NXP BFG21W Schematic [ru]

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D124

BFG21W

UHF power transistor

Product specification
Supersedes data of 1997 Nov 21

1998 Jul 06

NXP Semiconductors Product specification

Fig.1 Simplified outline SOT343R.

Marking code: P1.

handbook, halfpage

Top view

MSB842

21

43

UHF power transistor BFG21W

FEATURES

 High power gain
 High efficiency
 1.9 GHz operating area
 Linear and non-linear operation.

APPLICATIONS

 Common emitter class-AB output stage in hand held

radio equipment at 1.9 GHz such as DECT, PHS, etc.

 Driver for DCS1800, 1900.

DESCRIPTION

NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applica tions
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.

PINNING

PIN DESCRIPTION

1, 3 emitter

2base
4 collector

QUICK REFERENCE DATA

RF performance at T

 60 C in a common emitter test circuit.

s

MODE OF OPERATION

Pulsed class-AB;  <1:2; t

f

(GHz)

=5ms 1.9 3.6 26 10 typ.55

p

V

(V)

CE

P

L

(dBm)

G

(dB)

p



(%)

C

1998 Jul 06 2

NXP Semiconductors Product specification

Fig.2 Transient thermal resistance as a function of pulse time; typical values.

At temperature stabilizatio n solder point has been reached.

handbook, full pagewidth

10

3

10

2

10

1

10

−6

10

−5

10

−4

10

−3

10

−2

10

−1

1

MGM219

R

th

(K/W)

tp (s)

t

p

t

p

T

P

t

T

δ =

δ =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01
0

UHF power transistor BFG21W

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134 ) .

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. T

s

THERMAL CHARACTERISTICS

collector-base voltage open emitter  15 V
collector-emitter voltage open base  4.5 V
emitter-base voltage open collector  1V
collector current (DC)  500 mA
total power dissipation Ts 60 C; note 1  600 mW
storage temperature 65 +150 C
operating junction temperature  150 C

is the temperature at the soldering point of the emitter pins.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

thermal resistance from junction to

Ts 60 C; P

soldering point

is the temperature at the soldering point of the emitter pins.

s

= 600 mW; note 1 150 K/W

tot

1998 Jul 06 3

NXP Semiconductors Product specification

Fig.3 Power gain and collector efficiency as a

function of the load power; typical values.

Pulsed, class-AB operation;  <1:2; tp=5ms.
f=1.9GHz; V

CE

=3.6V; ICQ= 1 mA; tuned at PL=26dBm.

handbook, halfpage

5

16

8

12

4

0

80

40

60

20

0

10 30

MGM220

15 20 25

PL (dBm)

η

C

(%)

η

C

G

p

(dB)

G

p

UHF power transistor BFG21W

CHARACTERISTICS

T

=25C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)CER

V

(BR)EBO

I

CES

h

FE

C

c

C

re

f

T

APPLICATION INFORMATION

RF performance at T

collector-base breakdown volt a ge open emitter; IC=0.1mA 15  V
collector-emitter breakdown voltage open base; IC=10mA 4.5  V
collector-emitter breakdown voltage RBE<1k, IC=10mA 10  V
emitter-base breakdown voltage open collec tor; IE=0.1mA 1  V
collector leakage current VCE=5V; VBE=0  10 A
DC current gain IC=200mA; VCE=2V 40 100
collector capacitance IE=ie=0; VCB=3V; f=1MHz  3pF
feedback capacitance IC=0; VCB=3.6V; f=1MHz  1.5 pF
transition frequency IC=200mA; VCE=3.6V;

18  GHz

f = 700 MHz

 60 C in a common emitter test circuit (see Figs 4 a nd 5).

s

MODE OF OPERATION

Pulsed; class-AB;  <1:2; t

f

(GHz)

=5ms 1.9 3.6 1 26 10 typ. 55

p

V

(V)

Ruggedness in class-AB operation

The transistor is capable of withs tandi ng a load mis match
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:  =1:2;

= 5 ms; f = 1.9 GHz at VCE=4.5V.

t

p

CE

I

CQ

(mA)

P

L

(dBm)

G

(dB)

p



C

(%)

1998 Jul 06 4

NXP Semiconductors Product specification

Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.

handbook, full pagewidth

MGM221

V

C

V

S

R1

TR1

L1

L4

L5

C4

C2

DUT

R2

C3

C1

RF input

50 Ω

RF output

50 Ω

L2

L3

C6

R3

C7

C5

UHF power transistor BFG21W

List of components used in test circuit (see Figs 4 and 5)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2 multilayer ceramic chip capacitor; note 1 3.3 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C4 multilayer ceramic chip capacitor; note 1 2.4 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100  18  0.2 mm
L2 stripline; note 2 50  3.2  0.8 mm
L3 stripline; note 2 50  4.6  0.8 mm
L5 Gra de 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-c ircu i t boa rd with PTFE fibre-glass dielectric (
tan  = 0.0019); thickness 0.64 mm, copper cladding = 35 m.

=6.15,

r

1998 Jul 06 5

NXP Semiconductors Product specification

Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

handbook, full pagewidth

MGM222

45

35

C4

C6

C7R3

R2

R1

TR1

C5

L3

L4

L5

output

C2

L1

L2

input

C1

C3

DUT

V

C

V

S

UHF power transistor BFG21W

1998 Jul 06 6

NXP Semiconductors Product specification

Fig.6 Input impedance as function of frequency

(series components); typical values.

VCE=3.6V; ICQ=1mA; PL=26dBm; Ts 60 C.

handbook, halfpage

1.8 1.85 1.9 2.0
f (GHz)

Z

i

(Ω)

10

0

8

MGM223

1.95

6

4

2

r

i

x

i

Fig.7 Load impedance as a function of frequency

(series components); typical values.

VCE=3.6V; ICQ=1mA; PL=26dBm; Ts 60 C.

handbook, halfpage

1.8 1.85 1.9

Z

L

(Ω)

f (GHz)

2.0

16

−8

8

12

MGM224

1.95

4

0

−4

R

L

X

L

UHF power transistor BFG21W

1998 Jul 06 7

NXP Semiconductors Product specification

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT343R

D

A

A

1

L

p

Q

detail X

c

H

E

E

v M

A

AB

0 1 2 mm

scale

X

21

43

Plastic surface-mounted package; reverse pinning; 4 leads SOT343R

w M

B

97-05-21
06-03-16

b

p

UNIT

A

1

max

b

p

cD

E

b

1

HEL

p

Qwv

mm

0.1

1.1

0.8

0.4

0.3

0.25

0.10

0.7

0.5

2.2

1.8

1.35

1.15

e

2.2

2.0

1.3

e

1

0.2y0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.23

0.13

e

1

A

e

y

b

1

UHF power transistor BFG21W

PACKAGE OUTLINE

1998 Jul 06 8

NXP Semiconductors Product specification

UHF power transistor BFG21W

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the prod uct specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

DEFINITIONS
Product specification  The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.

DISCLAIMERS
Limited warranty and liability  Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
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the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

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reserves the right to make changes to information
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the ris ks
associated with their applications and products.

1998 Jul 06 9

NXP Semiconductors Product specification

UHF power transistor BFG21W

NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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avoid a default of the applications and the prod ucts or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.

Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Rec ommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.

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Semiconductors products are sold subject to the general
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Quick reference data  The Quick reference data is an
extract of the product data given in t he Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Non-automotive qualified products  Unless this data
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In the event that customer uses the product for design-in
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Semiconductors’ standard warranty and NXP
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No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
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1998 Jul 06 10

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this document does not form part of any quotation or cont ra ct, is believed to be accurate and reliable and may be change d
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Printed in The Netherlands R77/03/pp11 Date of release: 1998Jul 06