NXP BFG10, BFG10/X Schematic [ru]

BFG10; BFG10/X
NPN 2 GHz RF power transistor
Rev. 05 — 22 November 2007 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
2 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X

FEATURES

High power gain
High efficiency
Small size discrete power amplifier
1.9 GHz operating area
Gold metallization ensures
excellent reliability.

APPLICATIONS

Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.

PINNING

PIN DESCRIPTION
BFG10 (see Fig.1)
1 collector 2 base 3 emitter 4 emitter
BFG10/X (see Fig.1)
1 collector 2 emitter 3 base 4 emitter

MARKING

TYPE NUMBER CODE
BFG10 %MS BFG10/X %MT
handbook, 2 columns
12
Top view
Fig.1 SOT143.
34
MSB014

QUICK REFERENCE DATA

RF performance at T
MODE OF OPERATION
=25°C in a common-emitter test circuit (see Fig.7).
amb
f
(GHz)
V
(V)
CE
P
L
(mW)
G
(dB)
p
η
(%)
Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 200 5 50

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter 20 V collector-emitter voltage open base 8V emitter-base voltage open collector 2.5 V collector current (DC) 250 mA average collector current 250 mA total power dissipation up to Ts=60°C; see Fig.2; note 1 400 mW storage temperature 65 +150 °C junction temperature 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
c
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
3 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s

CHARACTERISTICS

=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.1 mA 20 V collector-emitter breakdown voltage open base; IC= 5 mA 8 V emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 V collector leakage current VCE=5V; VBE=0 100 µA DC current gain IC= 50 mA; VCE=5V 25 collector capacitance IE=ie= 0; VCB= 3.6 V; f = 1 MHz 3pF feedback capacitance IC= 0; VCE= 3.6 V; f = 1 MHz 2pF
up to Ts=60°C; note 1; P
= 400 mW
tot
290 K/W
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 200
150
Fig.2 Power derating curve
MLC818
o
T ( C)
s
2.0
handbook, halfpage
C
c
(pF)
1.5
1.0
0.5
0
01048
IC= 0; f= 1 MHz.
2
6
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
MLC819
VCB(V)
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
4 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X

APPLICATION INFORMATION

RF performance at T
=25°C in a common-emitter test circuit (see Fig.7).
amb
MODE OF OPERATION
f
(GHz)
Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200
V
(V)
CE
I
CQ
(mA)
P
L
(mW)
G
(dB)
p
η
(%)
c
>5 >50
typ. 7 typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
10
handbook, halfpage
G
p
(dB)
8
6
4
2
MLC820
100
η
η
c
G
p
c
(%)
80
60
40
20
500
handbook, halfpage
P
L
(mW)
400
300
200
100
MLC821
0
Pulsed, class-AB operation. VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL= 200 mW.
100 200 300 400
0 500
P (mW)
L
Fig.4 Power gain and efficiency as functions
of load power; typical values.
0
0
0 50 100 150
Pulsed, class-AB operation. VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL= 200 mW.
P (mW)
D
Fig.5 Load power as a function of drive
power; typical values.
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
5 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 2.714 fA 2 BF 102.8 3 NF 0.998 4 VAF 28.12 V 5 IKF 6.009 A 6 ISE 403.2 pA 7 NE 2.937 8 BR 31.01 9 NR 0.999 10 VAR 2.889 V 11 IKR 0.284 A 12 ISC 1.487 fA 13 NC 1.100 14 RB 3.500 15 IRB 1.000 µA 16 RBM 3.500 17 RE 0.217 18 RC 0.196
(1)
19 20 21
(1) (1)
XTB 0.000 EG 1.110 eV
XTI 3.000 22 CJE 5.125 pF 23 VJE 0.600 V 24 MJE 0.367 25 TF 12.07 ps 26 XTF 99.40 27 VTF 7.220 V 28 ITF 3.950 A 29 PTF 0.000 deg 30 CJC 2.327 pF 31 VJC 0.668 V 32 MJC 0.398 33 XCJC 0.160
(1)
34 35 36 37
(1) (1) (1)
TR 0.000 ns
CJS 0.000 F
VJS 750.0 mV
MJS 0.000 38 FC 0.652
handbook, halfpage
L1 L2
B
C
QLB= 50; QLE= 50; QL
= scaling frequency = 100 MHz.
f
c
L
be ce
Fig.6 Package equivalent circuit SOT143.
List of components (see Fig.6)
DESIGNATION VALUE UNIT
C
be
C
cb
C
ce
L1 0.12 nH L2 0.21 nH L3 0.06 nH L
B
L
E
C
cb
B
E'
L
L3
E
(f)=QL
B,E
B,E
(f/fc);
84 fF 17 fF 191 fF
0.95 nH
0.40 nH
CB' C'
C
E
MBC964
Note
1. These parameters have not been extracted, the default values are shown.
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
6 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X
Test circuit information
handbook, full pagewidth
50 input
R2
C1
R1 T1
L10
L9
L1
L8
L2
C2, C3,
C4, C5
C14, C15,
C16
C11
C10
DUT
V
S
C12 C13
L7
L6
L4
L3 L5
C6, C7,
C8
C9
MLC822
50
output
V
bias
Fig.7 Common-emitter test circuit for class-AB operation at 1.9GHz.
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
7 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X
List of components used in test circuit (see Fig.7)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF C2, C3, C4, C5,
C6, C7 C8 multilayer ceramic chip capacitor; note 1 1.1 pF C12, C13 electrolytic capacitor 470 µF; 10 V 2222 031 34471 C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF L1 stripline; note 2 length 28.5 mm
L2 stripline; note 2 length 2.3 mm
L3 stripline; note 2 length 3.1 mm
L4 stripline; note 2 length 3.3 mm
L5 stripline; note 2 length 16.3 mm
L6 stripline; note 2 length 10 mm
L7 stripline; note 2 length 4.4 mm
L8 stripline; note 2 length 19.3 mm
L9 stripline; note 2 length 19.7 mm
L10 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301
multilayer ceramic chip capacitor; note 1 0.86 pF
width 0.93 mm
width 0.93 mm
width 0.93 mm
width 0.93 mm
width 0.93 mm
width 0.93 mm
width 0.4 mm
width 0.93 mm
width 0.4 mm
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a
1
⁄32inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr= 6).
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
8 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X
handbook, full pagewidth
60
C6
C7 C8
Collector
C15
C16
Collector
L5
C12
C13
C9
MLC823
V
S
Base
V
bias
C1
T1
R2
L10
R1
L9
L1
C11
C2
Base
70
C14
L8
C3
L2 L3
C4
L7
C5
C10
L6
L4
Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
NXP Semiconductors Product specification
Rev. 05 - 22 November 2007
9 of 11
NPN 2 GHz RF power transistor BFG10; BFG10/X

PACKAGE OUTLINE

handbook, full pagewidth
Dimensions in mm.
10
max
3.0
0.150
30
max
0.090
0.1
max
max
o
o
10
0.88
0.75
0.60
o
1.1
max
2.8
1.9
43
1
2
0
0.1
TOP VIEW
0.48
1.7
0
0.1
B
A
1.4
1.2
M0.1 AB
2.5
max
0.2
MBC845
M
AB
Fig.9 SOT143.
NXP Semiconductors
Rev. 05 - 22 November 2007
10 of 11

Legal information

Data sheet status

BFG10; BFG10/X
NPN 2 GHz RF power transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
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Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shallhaveno liability for the consequences of use of such information.
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reliable. However, NXP Semiconductors does not give anyrepresentations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for the consequences of use of such information.
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Definition
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device.Limitingvalues are stress ratingsonly and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
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Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
NXP Semiconductors
BFG10; BFG10/X
NPN 2 GHz RF power transistor

Revision history

Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFG10X_N_5 20071122 Product data sheet - BFG10X_4 Modifications: BFG10X_4 19950831 Product specification - BFG10X_3 BFG10X_3 19950307 - - BFG10X_2 BFG10X_2 - - - BFG10X_1 BFG10X_1 - - - -
Marking table on page 2; changed code
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2007
Document identifier: BFG10X_N_5
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