NXP BF545A, BF545B, BF545C Schematic [ru]

SOT23

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors

Rev. 4 — 15 September 2011 Product data sheet

1. Product profile

1.1 General description

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

CAUTION

1.2 Features and benefits

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

 Low leakage level (typ. 500 fA)  High gain  Low cut-off voltage (max. 2.2 V for BF545A).

1.3 Applications

 Impedance converters in e.g. electret microphones and infra-red detectors  VHF amplifiers in oscillators and mixers.

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V

DSS

P y

DS GSoff

tot

drain-source voltage - - 30 V gate-source cut-off

voltage drain current VGS=0V; VDS=15V

total power dissipation T

 forward transfer

admittance

ID=1A; VDS=15V 0.4 - 7.8 V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

 25 C--250mW

amb

VGS=0V; VDS=15V 3 - 6.5 mS

NXP Semiconductors

sym054

d sg

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 source (s) 2drain (d) 3gate (g)

3. Ordering information

Table 3. Ordering information

Type number Package

BF545A - plastic surface mounted package; 3 leads SOT23 BF545B BF545C

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Name Description Version

4. Marking

Table 4. Marking

Type number Marking code

BF545A 20* BF545B 21* BF545C 22*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

[1]

Product data sheet Rev. 4 — 15 September 2011 2 of 16

NXP Semiconductors

amb

(°C)

0 20015050 100

mbb688

200

100

300

400

tot

(mW)

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

GSO

GDO

tot

stg

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

drain-source voltage (DC) - 30 V gate-source voltage open drain - 30 V gate-drain voltage (DC) open source - 30 V forward gate current (DC) - 10 mA total power dissipation T

amb

 25 C storage temperature 65 +150 C junction temperature - 150 C

[1]

-250mW

6. Thermal characteristics

Product data sheet Rev. 4 — 15 September 2011 3 of 16

Fig 1. Power derating curve.

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mou nting pad for the drain

thermal resistance from junction to ambient

lead 10 mm

[1]

500 K/W

NXP Semiconductors

7. Static characteristics

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Table 7. Static characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)GSS

GSoff

gate-source breakdown voltage IG= 1 A; VDS=0V 30--V gate-source cut-off voltage ID= 200 A; VDS=15V

BF545A 0.4 - 2.2 V BF545B 1.6 - 3.8 V BF545C 3.2 - 7.8 V

=1A; VDS=15V 0.4 - 7.5 V

DSS

drain current VGS=0V; VDS=15V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

GSS

y

 forward transfer admittance VGS=0V; VDS=15V 3 - 6.5 mS

y

gate-source leakage current VGS= 20 V; VDS=0V - 0.5 1000 pA

--100 nA

 common source output

= 20 V; VDS=0V;

=125C

VGS=0V; VDS=15V - 40 - S

admittance

Product data sheet Rev. 4 — 15 September 2011 4 of 16

NXP Semiconductors

GSoff

(V)

0 −8−6−2 −4

mbb467

DSS

(mA)

GSoff

(V)

0 −8−6−2 −4

mbb466

4.5

5.5

(mS)

8. Dynamic characteristics

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Table 8. Dynamic characteristics

= 25 C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

iss

rss

input capacitance VDS=15V; f=1MHz

= 10 V - 1.7 - pF

=0V - 3 - pF

reverse transfer capacitance VDS=15V; f=1MHz

= 10 V - 0.8 - pF

= 0 V - 0.9 - pF

common source input conductance

VDS=10V; ID=1mA

f = 100 MHz - 15 - S f = 450 MHz - 300 - S

common source transfer conductance

VDS=10V; ID=1mA

f = 100 MHz - 2 - mS f = 450 MHz - 1.8 - mS

common source reverse conductance

VDS=10V; ID=1mA

f = 100 MHz - 6- S f = 450 MHz - 40 - S

common source output conductance

VDS=10V; ID=1mA

f = 100 MHz - 30 - S f = 450 MHz - 60 - S

VDS = 15 V; Tj = 25 C. VDS = 15 V; VGS = 0 V; Tj = 25 C.

Fig 2. Drain current as a function of gate-source

cut-off voltage; typical values.

Fig 3. Forward transfer admittance as a function of

gate-source cut-off voltage; typical values.

Product data sheet Rev. 4 — 15 September 2011 5 of 16

NXP Semiconductors

GSoff

(V)

0 −8−6−2 −4

mbb465

(μS)

GSoff

(V)

0 −8−6−2 −4

mbb464

100

200

300

DSon

(Ω)

VDS (V)

0161248

mbb462

(mA)

(1)

(2)

(3)

VGS (V)

−30−1−2

mbb463

(mA)

VDS = 15 V; VGS = 0 V; Tj = 25 C. VDS = 100 mV; VGS = 0 V; Tj = 25 C.

Fig 4. Common-source output admittance as a

function of gate-source cut-off voltage; typical values.

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Fig 5. Drain-source on-resistance as a function of

gate-source cut-off voltage; typical values.

BF545A

(1) V

(2) V

(3) V

Fig 6. Typical output characteristics. Fig 7. Typical input characteristics.

Product data sheet Rev. 4 — 15 September 2011 6 of 16

= 25 C.

= 0 V. = 0.5 V. = 1.0 V.

BF545A

= 15 V; Tj = 25 C.

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