
DISCRETE SEMICONDUCTORS
BCW69; BCW70
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 19
2004 Feb 06

NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
complements: BCW71 and BCW72.
NPN
MARKING
T YPE NUMBER MARKING CODE
BCW69 H1*
BCW70 H2*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BCW69 − plastic surface mounted package; 3 leads SOT23
BCW70
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −50 V
collector-emitter voltage open base; IC = −2 mA − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2004 Feb 06 2

NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure IC = −200 μA; VCE = −5 V;
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −20 V − − −100 nA
IE = 0; VCB = −20 V; Tj = 100 °C − − −10 μA
emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
DC current gain IC = −10 μA; VCE = −5 V
BCW69 − 90 −
BCW70 − 150 −
DC current gain IC = −2 mA; VCE = −5 V
BCW69 120 − 260
BCW70 215 − 500
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA − −80 −300 mV
IC = −50 mA; IB = −2.5 mA; note 1 − −150 − mV
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −720 − mV
IC = −50 mA; IB = −2.5 mA; note 1 − −810 − mV
base-emitter voltage IC = −2 mA; VCE = −5 V −600 − −750 mV
collector capacitance IE = Ie = 0; VCB = −10 V;
f
= 1 MHz
transition frequency IC = −10 mA; VCE = −5 V;
= 100 MHz
f
− 4.5 − pF
100 − − MHz
− − 10 dB
R
= 2 kΩ; f = 1 kHz; B = 200 Hz
S
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Feb 06 3

NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Feb 06 4

NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Feb 06 5
60134) may cause permanent damage to

NXP Semiconductors
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Printed in The Netherlands R75/04/pp6 Date of release: 2004 Feb 06 Document order number: 9397 750 12405