NXP BCV62, BCV62A, BCV62B, BCV62C Schematic [ru]
BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number Package NPN complement
BCV62 SOT143B - BCV61
BCV62A BCV61A
BCV62B BCV61B
BCV62C BCV61C
NXP JEITA
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature
Current mirrors
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CEO
I
C
Transistor TR1
h
FE
collector-emitter voltage open base - - −30 V
collector current - - −100 mA
DC current gain VCE= −5V; IC= −100 μA 100 - -
= −5V; IC= −2 mA 100 - 800
V
CE
NXP Semiconductors
3
BCV62
PNP general-purpose double transistors
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR2
h
FE
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2;
2 collector TR1
3emitterTR1
4emitterTR2
…continued
DC current gain VCE= −5V; IC= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
base TR1 and TR2
34
TR2
21
4
12
3
TR1
006aaa84
3. Ordering information
Table 4. Ordering information
Type number Package
BCV62 - plastic surface-mounted package; 4 leads SOT143B
BCV62A
BCV62B
BCV62C
4. Marking
Table 5. Marking codes
Type number Marking code
BCV62 3M*
BCV62A 3J*
BCV62B 3K*
BCV62C 3L*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Name Description Version
[1]
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 2 of 14
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBS
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
BCV62
PNP general-purpose double transistors
collector-base voltage open emitter - −30 V
collector-emitter voltage open base - −30 V
emitter-base voltage VCE=0V - −6V
collector current - −100 mA
peak collector current - −200 mA
peak base current - −200 mA
total power dissipation T
amb
≤ 25 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1]
-250mW
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 8. Characteristics
T
=25°C unless otherwise specified.
j
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
I
CBO
I
EBO
h
V
FE
CEsat
collector-base
cut-off current
emitter-base
cut-off current
DC current gain VCE= −5V;
collector-emitter
saturation voltage
in free air
[1]
- - 500 K/W
VCB= −30 V; IE=0A - - −15 nA
= −30 V; IE=0A;
V
CB
= 150 °C
T
j
--−5 μA
VEB= −5V; IC=0A - - −100 nA
100 - -
= −100 μA
I
C
= −5V; IC= −2 mA 100 - 800
V
CE
IC= −10 mA;
= −0.5 mA
I
B
I
= −100 mA;
C
- −75 −300 mV
- −250 −650 mV
IB= −5mA
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 3 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
Table 8. Characteristics
…continued
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
BEsat
base-emitter
saturation voltage
IC= −10 mA;
IB= −0.5 mA
= −100 mA;
I
C
[1]
- −700 - mV
[1]
- −850 - mV
IB= −5mA
V
BE
f
T
base-emitter voltage IC= −2mA; VCE= −5V
= −10 mA; VCE= −5V
I
C
transition frequency VCE= −5V;
= −10 mA;
I
C
[2]
−600 −650 −750 mV
[2]
--−820 mV
100 - - MHz
f=100MHz
C
c
collector capacitance VCB= −10 V;
-4.5-pF
IE=ie=0A
NF noise figure V
= −5V;
CE
= −200 μA; RS=2kΩ;
I
C
--10dB
f = 1 kHz; B = 200 Hz
Transistor TR2
V
EBS
h
FE
emitter-base voltage VCB=0V; IE= −250 mA - - −1.5 V
=0V; IE= −10 μA −400--mV
V
CB
DC current gain VCE= −5V; IC= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
Transistors TR1 and TR2
I
C1/IE2
I
E2
current matching IE2= −0.5 mA;
= −5V;
V
CE1
≤ 25 °C 0.7 - 1.3
T
amb
≤ 150 °C 0.7 - 1.3
T
amb
emitter current 2 V
CE1
= −5V
[3]
--−5mA
[1] V
[2] V
[3] Device, without emitter resistors, mounted on an FR4 PCB.
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 4 of 14
decreases by about 1.7 mV/K with increasing temperature.
BEsat
decreases by about 2 mV/K with increasing temperature.
BE
NXP Semiconductors
BCV62
PNP general-purpose double transistors
500
h
FE
400
(1)
300
200
100
0
−10
−2
−10
−1
(2)
(3)
−1 −10 −10
mgt711
2
IC (mA)
−10
3
VCE= −5V
amb
amb
amb
= 150 °C
=25°C
= −55 °C
(1) T
(2) T
(3) T
Fig 1. BCV62A: DC current gain as a function of
collector current; typical values
mgt712
2
IC (mA)
−10
3
V
BE
(mV)
−1200
−1000
−800
−600
−400
−200
(1) T
(2) T
(3) T
0
−10
−2
V
CE
amb
amb
amb
−1
−10
= −5V
= −55 °C
=25°C
= 150 °C
(1)
(2)
(3)
−1 −10 −10
Fig 2. BCV62A: Base-emitter voltage as a function of
collector current; typical values
2
IC (mA)
mgt713
−10
3
V
(mV)
−10
CEsat
−10
−10
−10
−10
4
3
2
−1
(1)
(2)(3)
−1 −10 −10
IC/IB=20
amb
amb
amb
= 150 °C
=25°C
= −55 °C
(1) T
(2) T
(3) T
Fig 3. BCV62A: Collector-emitter saturation voltage
as a function of collector current; typical
values
2
IC (mA)
mgt714
−10
3
−1200
V
BEsat
(mV)
−1000
−800
−600
−400
−200
0
−10
(1) T
(2) T
(3) T
I
−1
C/IB
amb
amb
amb
(1)
(2)
(3)
−1 −10 −10
=20
= −55 °C
=25°C
= 150 °C
Fig 4. BCV62A: Base-emitter saturation voltage as a
function of collector current; typical values
BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 26 July 2010 5 of 14
Loading...