NXP BCV62, BCV62A, BCV62B, BCV62C Schematic [ru]

BCV62

PNP general-purpose double transistors

Rev. 4 — 26 July 2010 Product data sheet

1. Product profile

1.1 General description

PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.

Table 1. Product overview

Type number Package NPN complement

BCV62 SOT143B - BCV61
BCV62A BCV61A
BCV62B BCV61B
BCV62C BCV61C

NXP JEITA

1.2 Features and benefits

 Low current (max. 100 mA)
 Low voltage (max. 30 V)
 Matched pairs
 AEC-Q101 qualified
 Small SMD plastic package

1.3 Applications

 Applications with working point independent of temperature
 Current mirrors

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

CEO

I

C

Transistor TR1

h

FE

collector-emitter voltage open base - - −30 V
collector current - - −100 mA

DC current gain VCE= −5V; IC= −100 μA 100 - -

= −5V; IC= −2 mA 100 - 800

V

CE

NXP Semiconductors

3

BCV62

PNP general-purpose double transistors

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR2

h

FE

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 collector TR2;

2 collector TR1
3emitterTR1
4emitterTR2

…continued

DC current gain VCE= −5V; IC= −2mA

BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800

base TR1 and TR2

34

TR2

21

4

12

3

TR1

006aaa84

3. Ordering information

Table 4. Ordering information

Type number Package

BCV62 - plastic surface-mounted package; 4 leads SOT143B
BCV62A
BCV62B
BCV62C

4. Marking

Table 5. Marking codes

Type number Marking code

BCV62 3M*
BCV62A 3J*
BCV62B 3K*
BCV62C 3L*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

Name Description Version

[1]

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 2 of 14

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBS

I

C

I

CM

I

BM

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

BCV62

PNP general-purpose double transistors

collector-base voltage open emitter - −30 V
collector-emitter voltage open base - −30 V
emitter-base voltage VCE=0V - −6V
collector current - −100 mA
peak collector current - −200 mA
peak base current - −200 mA

total power dissipation T

amb

≤ 25 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

[1]

-250mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from junction
to ambient

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 8. Characteristics

T

=25°C unless otherwise specified.

j

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR1

I

CBO

I

EBO

h

V

FE

CEsat

collector-base
cut-off current

emitter-base
cut-off current

DC current gain VCE= −5V;

collector-emitter
saturation voltage

in free air

[1]

- - 500 K/W

VCB= −30 V; IE=0A - - −15 nA

= −30 V; IE=0A;

V

CB

= 150 °C

T

j

--−5 μA

VEB= −5V; IC=0A - - −100 nA

100 - -

= −100 μA

I

C

= −5V; IC= −2 mA 100 - 800

V

CE

IC= −10 mA;

= −0.5 mA

I

B

I

= −100 mA;

C

- −75 −300 mV

- −250 −650 mV

IB= −5mA

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 3 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

Table 8. Characteristics

…continued

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

BEsat

base-emitter
saturation voltage

IC= −10 mA;
IB= −0.5 mA

= −100 mA;

I

C

[1]

- −700 - mV

[1]

- −850 - mV

IB= −5mA

V

BE

f

T

base-emitter voltage IC= −2mA; VCE= −5V

= −10 mA; VCE= −5V

I

C

transition frequency VCE= −5V;

= −10 mA;

I

C

[2]

−600 −650 −750 mV

[2]

--−820 mV
100 - - MHz

f=100MHz

C

c

collector capacitance VCB= −10 V;

-4.5-pF

IE=ie=0A

NF noise figure V

= −5V;

CE

= −200 μA; RS=2kΩ;

I

C

--10dB

f = 1 kHz; B = 200 Hz

Transistor TR2

V

EBS

h

FE

emitter-base voltage VCB=0V; IE= −250 mA - - −1.5 V

=0V; IE= −10 μA −400--mV

V

CB

DC current gain VCE= −5V; IC= −2mA

BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800

Transistors TR1 and TR2

I

C1/IE2

I

E2

current matching IE2= −0.5 mA;

= −5V;

V

CE1

≤ 25 °C 0.7 - 1.3

T

amb

≤ 150 °C 0.7 - 1.3

T

amb

emitter current 2 V

CE1

= −5V

[3]

--−5mA

[1] V
[2] V
[3] Device, without emitter resistors, mounted on an FR4 PCB.

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 4 of 14

decreases by about 1.7 mV/K with increasing temperature.

BEsat

decreases by about 2 mV/K with increasing temperature.

BE

NXP Semiconductors

BCV62

PNP general-purpose double transistors

500

h

FE

400

(1)

300

200

100

0

−10

−2

−10

−1

(2)

(3)

−1 −10 −10

mgt711

2

IC (mA)

−10

3

VCE= −5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 1. BCV62A: DC current gain as a function of

collector current; typical values

mgt712

2

IC (mA)

−10

3

V

BE

(mV)

−1200

−1000

−800

−600

−400

−200

(1) T
(2) T
(3) T

0

−10

−2

V

CE
amb
amb
amb

−1

−10

= −5V

= −55 °C
=25°C
= 150 °C

(1)

(2)

(3)

−1 −10 −10

Fig 2. BCV62A: Base-emitter voltage as a function of

collector current; typical values

2

IC (mA)

mgt713

−10

3

V

(mV)

−10

CEsat

−10

−10

−10

−10

4

3

2

−1

(1)

(2)(3)

−1 −10 −10

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 3. BCV62A: Collector-emitter saturation voltage

as a function of collector current; typical
values

2

IC (mA)

mgt714

−10

3

−1200

V

BEsat

(mV)

−1000

−800

−600

−400

−200

0

−10

(1) T
(2) T
(3) T

I

−1

C/IB

amb
amb
amb

(1)

(2)

(3)

−1 −10 −10

=20

= −55 °C
=25°C
= 150 °C

Fig 4. BCV62A: Base-emitter saturation voltage as a

function of collector current; typical values

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 5 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

mgt715

2

IC (mA)

−10

3

h

1000

FE

800

600

400

200

0

−10

(1)

(2)

(3)

−2

−10

−1

−1 −10 −10

VCE= −5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 5. BCV62B: DC current gain as a function of

collector current; typical values

mgt716

2

IC (mA)

−10

3

V

BE

(mV)

−1200

−1000

−800

−600

−400

−200

(1) T
(2) T
(3) T

0

−10

−2

V

CE
amb
amb
amb

−1

−10

= −5V

= −55 °C
=25°C
= 150 °C

(1)

(2)

(3)

−1 −10 −10

Fig 6. BCV62B: Base-emitter voltage as a function of

collector current; typical values

2

IC (mA)

mgt717

−10

3

V

(mV)

−10

CEsat

−10

−10

−10

−10

4

3

2

(1)

(3)

(2)

−1

−1 −10 −10

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 7. BCV62B: Collector-emitter saturation voltage

as a function of collector current; typical
values

2

IC (mA)

mgt718

−10

3

V

(mV)

BEsat

−1200

−1000

−800

−600

−400

−200

(1) T
(2) T
(3) T

0

−10

I

−1

C/IB

amb
amb
amb

(1)

(2)

(3)

−1 −10 −10

=20

= −55 °C
=25°C
= 150 °C

Fig 8. BCV62B: Base-emitter saturation voltage as a

function of collector current; typical values

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 6 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

mgt719

2

IC (mA)

−10

3

h

1000

FE

800

600

400

200

0

−10

(1)

(2)

(3)

−2

−10

−1

−1 −10 −10

VCE= −5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 9. BCV62C: DC current gain as a function of

collector current; typical values

2

IC (mA)

mgt720

−10

3

V

BE

(mV)

−1200

−1000

−800

−600

−400

−200

(1) T
(2) T
(3) T

0

−10

V

−1

CE
amb
amb
amb

(1)

(2)

(3)

−1 −10 −10

= −5V

= −55 °C
=25°C
= 150 °C

Fig 10. BCV62C: Base-emitter voltage as a function of

collector current; typical values

2

IC (mA)

mgt721

−10

3

V

(mV)

−10

CEsat

−10

−10

−10

−10

4

3

2

(1)

(2)

(3)

−1

−1 −10 −10

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 11. BCV62C: Collector-emitter saturation voltage

as a function of collector current; typical
values

2

IC (mA)

mgt722

−10

3

V

BEsat

(mV)

−1200

−1000

−800

−600

−400

−200

(1) T
(2) T
(3) T

0

−10

I

−1

C/IB

amb
amb
amb

(1)

(2)

(3)

−1 −10 −10

=20

= −55 °C
=25°C
= 150 °C

Fig 12. BCV62C: Base-emitter saturation voltage as a

function of collector current; typical values

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 7 of 14

NXP Semiconductors

1

01

t

BCV62

PNP general-purpose double transistors

−V

Fig 13. Maximum collector-emitter voltage as a function of emitter resistor

8. Test information

−30

CE1max

(V)

−20

−10

0

−1

10

IC1/IE2=1.3

(see Figure 15)

mbk083

IE2 =
1 mA

5 mA

10 mA

50 mA

1

10

(Ω)

R

E

2

10

A

I

C1

−V

CE1

Fig 14. Test circuit current matching

A

I

C1

−V

CE1

R

Fig 15. Current mirror with emitter resistors

12

I

=

TR2TR1

E2

constant

43

006aaa84

12

I

=

TR2TR1

E2

constan

43

R

E

E

006aac0

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 8 of 14

NXP Semiconductors

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

9. Package outline

2.5

2.1

1.4

1.2

0.88

0.78

BCV62

PNP general-purpose double transistors

3.0

2.8

1.9

1.7

34

0.45

0.15

21

0.48

0.38

1.1

0.9

0.15

0.09

04-11-16Dimensions in mm

Fig 16. Package outline SOT143B

10. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BCV62 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BCV62A
BCV62B
BCV62C

[1] For further information and the availability of packing methods, see Section 14.

[1]

3000 10000

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 9 of 14

NXP Semiconductors

fr

fw

11. Soldering

BCV62

PNP general-purpose double transistors

3.25

0.6

(3×)

0.5

(3×)

1.9

0.6

0.7
(3×)

(3×)

0.60.7

0.75 0.95

0.9

1

Fig 17. Reflow soldering footprint SOT143B

4.45

2.2

1.2

(3×)

solder lands

solder resist

2

3

Dimensions in mm

1.425
(3×)

solder paste

occupied area

sot143b_

solder lands

4.6

2.575

Dimensions in mm

1.425

preferred transport direction during soldering

1

1.2

solder resist

occupied area

sot143b_

Fig 18. Wave soldering footprint SOT143B

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 10 of 14

NXP Semiconductors

PNP general-purpose double transistors

BCV62

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCV62 v.4 20100726 Product data sheet - BCV62_3
Modifications:

BCV62_3 19990408 Product specification - BCV62_CNV_2
BCV62_CNV_2 19970618 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 1 “Product profile”: amended

• Section 3 “Ordering information”: added

• Section 4 “Marking”: updated

• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added

• Section 8 “Test information”: added

• Figure 16: superseded by mini mized package outline drawing

• Section 10 “Packing information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 11 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data fro m the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.

NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

, unless otherwise

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 12 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

BCV62 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 4 — 26 July 2010 13 of 14

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

BCV62

PNP general-purpose double transistors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 26 July 2010

Document identifier: BCV62