NXP BCV61, BCV61A, BCV61B, BCV61C Schematic [ru]
2
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP complement
BCV61 SOT143B - BCV62
BCV61A BCV62A
BCV61B BCV62B
BCV61C BCV62C
NXP JEITA
1.2 Features
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
1.3 Applications
Applications with working point independent of temperature
Current mirrors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2;
2 collector TR1
3emitterTR1
4emitterTR2
base TR1 and TR2
34
21
4
TR2
12
3
TR1
006aaa84
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C
4. Marking
Table 4. Marking codes
Type number Marking code
BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*
BCV61
NPN general-purpose double transistors
Name Description Version
[1]
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBS
I
C
I
CM
I
BM
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
collector-base voltage open emitter - 30 V
collector-emitter voltage open base - 30 V
emitter-base voltage VCE=0V - 6 V
collector current - 100 mA
peak collector current - 200 mA
peak base current - 200 mA
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 2 of 13
NXP Semiconductors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 7. Characteristics
=25°C unless otherwise specified.
T
j
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR1
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
NF noise figure V
collector-base cut-off current VCB=30V;
emitter-base cut-off current VEB=5V;
DC current gain VCE=5V;
collector-emitter saturation
voltage
base-emitter saturation voltage IC=10mA;
base-emitter voltage IC=2mA;
transition frequency VCE=5V;
collector capacitance VCB=10V;
BCV61
NPN general-purpose double transistors
in free air
IE=0A
=30V;
V
CB
IE=0A;
= 150 °C
T
j
IC=0A
= 100 μA
I
C
V
=5V;
CE
IC=2mA
IC=10mA;
IB=0.5mA
= 100 mA;
I
C
=5mA
I
B
IB=0.5mA
= 100 mA;
I
C
IB=5mA
=5V
V
CE
I
=10mA;
C
=5V
V
CE
I
=10mA;
C
f = 100 MHz
IE=ie=0A;
f=1MHz
=5V;
CE
= 200 μA;
I
C
RS=2kΩ;
f=1kHz;
B=200Hz
[1]
- - 500 K/W
--15nA
--5μA
- - 100 nA
100 - -
110 - 800
- 90 250 mV
- 200 600 mV
[1]
- 700 - mV
[1]
- 900 - mV
[2]
580 660 700 mV
[2]
- - 770 mV
100 - - MHz
-2.5-pF
--10dB
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 3 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
Table 7. Characteristics
…continued
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Transistor TR2
V
EBS
emitter-base voltage VCB=0V;
--−1.8 V
IE= −250 mA
V
CB
=0V;
−400--mV
IE= −10 μA
h
FE
DC current gain VCE=5V;
=2mA
I
C
BCV61 110 - 800
BCV61A 11 0 - 220
BCV61B 200 - 450
BCV61C 420 - 800
Transistors TR1 and TR2
I
C1/IE2
I
E2
[1] V
[2] V
[3] Device, without emitter resistors, mounted on an FR4 PCB.
current matching IE2= −0.5 mA;
V
=5V
CE1
T
amb
T
amb
emitter current 2 V
decreases by about 1.7 mV/K with increasing temperature.
BEsat
decreases by about 2 mV/K with increasing temperature.
BE
CE1
=5V
≤ 25 °C 0.7 - 1.3
≤ 150 °C 0.7 - 1.3
[3]
--−5mA
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
400
h
FE
300
200
100
0
−1
10
(1)
(2)
(3)
11010210
mgt723
3
IC (mA)
VCE=5V
amb
amb
amb
= 150 °C
=25°C
= −55 °C
(1) T
(2) T
(3) T
Fig 1. BCV61A: DC current gain as a function of
collector current; typical values
mgt724
3
IC (mA)
V
BE
(mV)
1200
1000
800
600
400
200
0
10
(1) T
(2) T
(3) T
−1
V
CE
amb
amb
amb
(1)
(2)
(3)
11010210
=5V
= −55 °C
=25°C
= 150 °C
Fig 2. BCV61A: Base-emitter voltage as a function of
collector current; typical values
mgt725
3
IC (mA)
V
(mV)
10
CEsat
10
3
2
10
−1
10
(1)
(2)
(3)
11010210
IC/IB=20
amb
amb
amb
= 150 °C
=25°C
= −55 °C
(1) T
(2) T
(3) T
Fig 3. BCV61A: Collector-emitter saturation voltage
as a function of collector current; typical
values
mgt726
3
IC (mA)
V
(mV)
BEsat
1200
1000
800
600
400
200
0
10
(1) T
(2) T
(3) T
I
C/IB
−1
amb
amb
amb
(1)
(2)
(3)
11010210
=10
= −55 °C
=25°C
= 150 °C
Fig 4. BCV61A: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 5 of 13
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