NXP BCV61, BCV61A, BCV61B, BCV61C Schematic [ru]

2

BCV61

NPN general-purpose double transistors

Rev. 04 — 18 December 2009 Product data sheet

1. Product profile

1.1 General description

NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.

Table 1. Product overview

Type number Package PNP complement

BCV61 SOT143B - BCV62
BCV61A BCV62A
BCV61B BCV62B
BCV61C BCV62C

NXP JEITA

1.2 Features

 Low current (max. 100 mA)
 Low voltage (max. 30 V)
 Matched pairs

1.3 Applications

 Applications with working point independent of temperature
 Current mirrors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 collector TR2;

2 collector TR1
3emitterTR1
4emitterTR2

base TR1 and TR2

34

21

4

TR2

12

3

TR1

006aaa84

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BCV61 - plastic surface-mounted package; 4 leads SOT143B
BCV61A
BCV61B
BCV61C

4. Marking

Table 4. Marking codes

Type number Marking code

BCV61 1M*
BCV61A 1J*
BCV61B 1K*
BCV61C 1L*

BCV61

NPN general-purpose double transistors

Name Description Version

[1]

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBS

I

C

I

CM

I

BM

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

collector-base voltage open emitter - 30 V
collector-emitter voltage open base - 30 V
emitter-base voltage VCE=0V - 6 V
collector current - 100 mA
peak collector current - 200 mA
peak base current - 200 mA

total power dissipation T

amb

≤ 25 °C

[1]

-250mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 2 of 13

NXP Semiconductors

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from junction
to ambient

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 7. Characteristics

=25°C unless otherwise specified.

T

j

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR1

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

f

T

C

c

NF noise figure V

collector-base cut-off current VCB=30V;

emitter-base cut-off current VEB=5V;

DC current gain VCE=5V;

collector-emitter saturation
voltage

base-emitter saturation voltage IC=10mA;

base-emitter voltage IC=2mA;

transition frequency VCE=5V;

collector capacitance VCB=10V;

BCV61

NPN general-purpose double transistors

in free air

IE=0A

=30V;

V

CB

IE=0A;

= 150 °C

T

j

IC=0A

= 100 μA

I

C

V

=5V;

CE

IC=2mA
IC=10mA;

IB=0.5mA

= 100 mA;

I

C

=5mA

I

B

IB=0.5mA

= 100 mA;

I

C

IB=5mA

=5V

V

CE

I

=10mA;

C

=5V

V

CE

I

=10mA;

C

f = 100 MHz

IE=ie=0A;
f=1MHz

=5V;

CE

= 200 μA;

I

C

RS=2kΩ;
f=1kHz;
B=200Hz

[1]

- - 500 K/W

--15nA

--5μA

- - 100 nA

100 - -

110 - 800

- 90 250 mV

- 200 600 mV

[1]

- 700 - mV

[1]

- 900 - mV

[2]

580 660 700 mV

[2]

- - 770 mV

100 - - MHz

-2.5-pF

--10dB

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 3 of 13

NXP Semiconductors

BCV61

NPN general-purpose double transistors

Table 7. Characteristics

…continued

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR2

V

EBS

emitter-base voltage VCB=0V;

--−1.8 V

IE= −250 mA
V

CB

=0V;

−400--mV

IE= −10 μA

h

FE

DC current gain VCE=5V;

=2mA

I

C

BCV61 110 - 800
BCV61A 11 0 - 220
BCV61B 200 - 450
BCV61C 420 - 800

Transistors TR1 and TR2

I

C1/IE2

I

E2

[1] V
[2] V
[3] Device, without emitter resistors, mounted on an FR4 PCB.

current matching IE2= −0.5 mA;

V

=5V

CE1

T

amb

T

amb

emitter current 2 V

decreases by about 1.7 mV/K with increasing temperature.

BEsat

decreases by about 2 mV/K with increasing temperature.

BE

CE1

=5V

≤ 25 °C 0.7 - 1.3
≤ 150 °C 0.7 - 1.3

[3]

--−5mA

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 4 of 13

NXP Semiconductors

BCV61

NPN general-purpose double transistors

400

h

FE

300

200

100

0

−1

10

(1)

(2)

(3)

11010210

mgt723

3

IC (mA)

VCE=5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 1. BCV61A: DC current gain as a function of

collector current; typical values

mgt724

3

IC (mA)

V

BE

(mV)

1200

1000

800

600

400

200

0
10

(1) T
(2) T
(3) T

−1

V

CE
amb
amb
amb

(1)

(2)

(3)

11010210

=5V

= −55 °C
=25°C
= 150 °C

Fig 2. BCV61A: Base-emitter voltage as a function of

collector current; typical values

mgt725

3

IC (mA)

V

(mV)

10

CEsat

10

3

2

10

−1

10

(1)

(2)

(3)

11010210

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 3. BCV61A: Collector-emitter saturation voltage

as a function of collector current; typical
values

mgt726

3

IC (mA)

V

(mV)

BEsat

1200

1000

800

600

400

200

0
10

(1) T
(2) T
(3) T

I

C/IB

−1

amb
amb
amb

(1)

(2)

(3)

11010210

=10

= −55 °C
=25°C
= 150 °C

Fig 4. BCV61A: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 5 of 13

NXP Semiconductors

BCV61

NPN general-purpose double transistors

600

h

FE

500

400

300

200

100

0

−1

10

11010210

(1)

(2)

(3)

mgt727

3

IC (mA)

VCE=5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 5. BCV61B: DC current gain as a function of

collector current; typical values

I

mgt728

(mA)

C

3

V

BE

(mV)

1200

1000

800

600

400

200

0

10

(1) T
(2) T
(3) T

−2

V

CE
amb
amb
amb

−1

10

=5V

= −55 °C
=25°C
= 150 °C

(1)

(2)

(3)

11010210

Fig 6. BCV61B: Base-emitter voltage as a function of

collector current; typical values

mgt729

3

IC (mA)

V

(mV)

CEsat

4

10

3

10

2

10

10

−1

10

(1)

(2)

(3)

11010210

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 7. BCV61B: Collector-emitter saturation voltage

as a function of collector current; typical
values

mgt730

3

IC (mA)

V

(mV)

BEsat

1200

1000

800

600

400

200

0
10

(1) T
(2) T
(3) T

I

C/IB

−1

amb
amb
amb

(1)

(2)

(3)

11010210

=10

= −55 °C
=25°C
= 150 °C

Fig 8. BCV61B: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 6 of 13

NXP Semiconductors

BCV61

NPN general-purpose double transistors

1200

h

FE

1000

800

600

400

200

(1)

(2)

(3)

0

−1

10

11010210

mgt731

3

IC (mA)

VCE=5V

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 9. BCV61C: DC current gain as a function of

collector current; typical values

mgt732

3

IC (mA)

V

BE

(mV)

1200

1000

800

600

400

200

0

10

(1) T
(2) T
(3) T

V

−2

CE
amb
amb
amb

−1

10

=5V

= −55 °C
=25°C
= 150 °C

(1)

(2)

(3)

11010210

Fig 10. BCV61C: Base-emitter voltage as a function of

collector current; typical values

mgt733

3

IC (mA)

V

(mV)

10

CEsat

10

10

4

3

2

(1)

(2)(3)

10

−1

10

11010210

IC/IB=20

amb
amb
amb

= 150 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 11. BCV61C: Collector-emitter saturation voltage

as a function of collector current; typical
values

mgt734

3

IC (mA)

V

BEsat

(mV)

1200

1000

800

600

400

200

0
10

(1) T
(2) T
(3) T

I

C/IB

−1

amb
amb
amb

(1)

(2)

(3)

11010210

=10

= −55 °C
=25°C
= 150 °C

Fig 12. BCV61C: Base-emitter saturation voltage as a

function of collector current; typical values

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 7 of 13

NXP Semiconductors

1

77

t

BCV61

NPN general-purpose double transistors

V

Fig 13. Maximum collector-emitter voltage as a function of emitter resistance

8. Test information

30

CE1max

(V)

20

10

0

10

IC1/IE2=1.3

mbk082

IE2 =
1 mA

5 mA

10 mA

50 mA

−1

1

10

(Ω)

R

E

2

10

A

I

C1

V

CE1

Fig 14. Test circuit current matching

A

I

C1

V

CE1

Fig 15. BCV61 with emitter resistors

12

I

=

TR2TR1

E2

constant

43

006aaa83

12

I

=

TR2TR1

E2

constan

43

R

R

E

E

006aab9

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 8 of 13

NXP Semiconductors

9. Package outline

Fig 16. Package outline SOT143B

2.5

2.1

1.4

1.2

0.88

0.78

BCV61

NPN general-purpose double transistors

3.0

2.8

1.9

1.7

34

0.45

0.15

21

0.48

0.38

1.1

0.9

0.15

0.09

04-11-16Dimensions in mm

10. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BCV61 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BCV61A
BCV61B
BCV61C

[1] For further information and the availability of packing methods, see Section 14.

[1]

3000 10000

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 9 of 13

NXP Semiconductors

fr

fw

11. Soldering

BCV61

NPN general-purpose double transistors

3.25

0.6

(3×)

0.5

(3×)

1.9

0.6

0.7
(3×)

(3×)

0.60.7

0.75 0.95

0.9

1

Fig 17. Reflow soldering footprint SOT143B

4.45

2.2

1.2

(3×)

solder lands

solder resist

2

3

Dimensions in mm

1.425
(3×)

solder paste

occupied area

sot143b_

solder lands

4.6

2.575

Dimensions in mm

1.425

preferred transport direction during soldering

1

1.2

solder resist

occupied area

sot143b_

Fig 18. Wave soldering footprint SOT143B

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 10 of 13

NXP Semiconductors

NPN general-purpose double transistors

BCV61

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCV61_4 20091218 Product data sheet - BCV61_3
Modifications:

BCV61_3 19990408 Product specification - BCV61_CNV_2
BCV61_CNV_2 19970616 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 3 “Ordering information”: added

• Section 4 “Marking”: updated

• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added

• Section 8 “Test information”: added

• Figure 16: superseded by minimized package outline drawing

• Section 10 “Packing information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 11 of 13

NXP Semiconductors

BCV61

NPN general-purpose double transistors

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data fro m the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

, including those pertaining to warranty,

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

BCV61_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 December 2009 12 of 13

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BCV61

NPN general-purpose double transistors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 18 December 2009

Document identifier: BCV61_4