DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BCV29; BCV49
NPN Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Dec 06
NXP Semiconductors Product data sheet
7
NPN Darlington transistors BCV29; BCV49
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• High DC current gain (min. 20 000).
APPLICATIONS
• Preamplifier input applications.
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
T YPE NUMBER MARKING CODE
BCV29 EF
BCV49 EG
ORDERING INFORMATION
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
TR1
321
Fig.1 Simplified outline (SOT89) and symbol.
23
TR2
1
sym08
T YPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
BCV29 SC-62 plastic surface mounted package; collector pad for good heat
BCV49
transfer; 3 leads
SOT89
2004 Dec 06 2
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BCV29 − 40 V
BCV49 − 80 V
collector-emitter voltage VBE = 0 V
BCV29 − 30 V
BCV49 − 60 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 1 A
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th(j-a)
th(j-s)
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 06 3
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
V
f
T
FE
CEsat
BEsat
BEon
collector-base cut-off curren t
BCV29 IE = 0 A; VCB = 30 V − − 100 nA
BCV49 IE = 0 A; VCB = 60 V − − 100 nA
emitter-base cut-off current IC = 0 A; VEB = 10 V − − 100 nA
DC current gain VCE = 5 V; s ee Fig.2
BCV29 IC = 1 mA 4 000 − −
IC = 10 mA 10 000 − −
IC = 100 mA 20 000 − −
IC = 500 mA 4 000 − −
DC current gain VCE = 5 V; s ee Fig.2
BCV49 IC = 1 mA 2 000 − −
IC = 10 mA 4 000 − −
IC = 100 mA 10 000 − −
IC = 500 mA 2 000 − −
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1 V
base-emitter saturation vo ltage IC = 100 mA; IB = 0.1 mA − − 1.5 V
base-emitter on-state voltage IC = 10 mA; VCE = 5 V − − 1.4 V
transition frequency IC = 30 mA; VCE = 5 V; f = 100 MHz − 220 − MHz
2004 Dec 06 4
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
−1
10
VCE = 2 V.
1
10 10
Fig.2 DC current gain; typical values.
MGD837
2
IC (mA)
3
10
2004 Dec 06 5
NXP Semiconductors Product data sheet
9
NPN Darlington transistors BCV29; BCV49
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
p1
1.6
1.4
0.48
0.35
mm
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
b
0.53
0.40
p3
p2
1.8
1.4
IEC JEDEC JEITA
c
0.44
0.23
D
4.6
4.4
REFERENCES
2.6
2.4
e
e
1.5
H
1
E
4.25
3.75
E
3.0
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
2004 Dec 06 6
NXP Semiconductors Product data sheet
NPN Darlington transistors BCV29; BCV49
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This docume nt contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the produc t specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was pub lished
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
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Quick reference data ⎯ The Quick reference data is an
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Dec 06 7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands R75/06/pp8 Date of release: 2004 Dec 06 Document order number: 9397 750 13863
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