NXP BC856AW, BC856BW, BC856W, BC857AW, BC857BW Schematic [ru]
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DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors Product data sheet
PNP general purpose transistors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
complements: BC846W, BC847W and BC848W.
NPN
MARKING
T YPE NUMBER MARKING CODE
BC856W 3D*
BC856AW 3A*
BC856BW 3B*
BC857W 3H*
BC857AW 3E*
BC857BW 3F*
BC857CW 3G*
BC858W 3M*
(1)
BC856W; BC857W;
BC858W
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Fig.1 Simplified outline (SOT323; SC70) and
symbol.
3
1
1
2
MAM048
3
2
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BC856W − −80 V
BC857W − −50 V
BC858W − −30 V
collector-emitter voltage open base
BC856W − −65 V
BC857W − −45 V
BC858W − −30 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 625 K/W
ambient
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC856W; BC857W; BC858W
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure IC = −200 μA; VCE = −5 V;
collector-base cut-off curren t VCB = −30 V; IE = 0 − −1 −15 nA
VCB = −30 V; IE = 0;
= 150 °C
T
j
− − −4 μA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
DC current gain IC = −2 mA; VCE = −5 V
BC856W 125 − 475
BC857W; BC858W 125 − 800
BC856AW; BC857AW 125 − 250
BC856BW; BC857BW 220 − 475
BC857CW 420 − 800
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV
IC = −100 mA; IB = −5 mA;
1
note
− −250 −600 mV
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −700 − mV
IC = −100 mA; IB = −5 mA;
note
1
− −850 − mV
base-emitter voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV
IC = −10 mA; VCE = −5 V − − −820 mV
collector capacitance VCB = −10 V; IE = Ie = 0;
f
= 1 MHz
emitter capacitance VEB = −0.5 V; IC = Ic = 0;
= 1 MHz
f
transition frequency VCE = −5 V; IC = −10 mA;
f
= 100 MHz
− − 3 pF
− − 12 pF
100 − − MHz
− − 10 dB
= 2 kΩ; f = 1 kHz;
R
S
= 200 Hz
B
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Feb 04 4
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