NXP 2PD601ART Schematic [ru]
2PD601ART
50 V, 100 mA NPN general-purpose transistor
Rev. 01 — 15 March 2007 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complement: 2PB709ART.
1.2 Features
n General-purpose transistor
n Small SMD plastic package
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
h
FE
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
2 emitter
3 collector
collector-emitter voltage open base - - 50 V
collector current - - 100 mA
DC current gain VCE=10V;
I
=2mA
C
210 - 340
3
12
3
1
2
sym021
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
2PD601ART - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code
2PD601ART C3*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
2PD601ART
50 V, 100 mA NPN general-purpose transistor
Name Description Version
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
collector-base voltage open emitter - 60 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;
t
≤ 1ms
p
peak base current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C
- 200 mA
- 100 mA
[1]
- 250 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 2 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
FR4 PCB, standard footprint
Fig 1. Power derating curve
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
300
P
tot
(mW)
200
100
0
−75 17512525 75−25
in free air
006aaa990
T
(°C)
amb
[1]
- - 500 K/W
- - 140 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 3 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
3
10
Z
(K/W)
δ = 1
th(j-a)
0.75
0.50
0.33
2
10
0.20
0.10
0.05
0.02
10
0.01
0
1
−5
10
FR4 PCB, standard footprint
−4
10
−3
10
−2
−1
10
1
1010
10
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
7. Characteristics
Table 7. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
V
f
T
C
FE
CEsat
c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE=2V;
collector-emitter
saturation voltage
transition frequency VCE=10V;
collector capacitance VCB=10V;
VCB=60V; IE=0A--10nA
=60V;IE=0A;
V
CB
T
= 150 °C
j
--5µA
VEB=5V; IC=0A --10nA
90 - -
I
= 100 mA
C
=10V;
V
CE
I
=2mA
C
IC= 100 mA;
I
=10mA
B
210 - 340
[1]
- - 250 mV
100 - - MHz
I
= 2 mA;
C
f = 100 MHz
--3pF
I
=0A;
E=ie
f=1MHz
2
006aaa991
tp (s)
3
10
[1] Pulse test: tp≤ 300 µs;δ≤0.02.
2PD601ART_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 15 March 2007 4 of 10
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