NXP 2PD601ART Schematic [ru]

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Rev. 01 — 15 March 2007 Product data sheet

1. Product profile

1.1 General description

NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.

PNP complement: 2PB709ART.

1.2 Features

n General-purpose transistor
n Small SMD plastic package

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

C

h

FE

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 base
2 emitter
3 collector

collector-emitter voltage open base - - 50 V
collector current - - 100 mA
DC current gain VCE=10V;

I

=2mA

C

210 - 340

3

12

3

1

2

sym021

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

2PD601ART - plastic surface-mounted package; 3 leads SOT23

4. Marking

Table 4. Marking codes

Type number Marking code

2PD601ART C3*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Name Description Version

[1]

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

collector-base voltage open emitter - 60 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C

- 200 mA

- 100 mA

[1]

- 250 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 2 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

FR4 PCB, standard footprint

Fig 1. Power derating curve

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

300

P

tot

(mW)

200

100

0

−75 17512525 75−25

in free air

006aaa990

T

(°C)

amb

[1]

- - 500 K/W

- - 140 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 3 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

3

10

Z

(K/W)

δ = 1

th(j-a)

0.75

0.50

0.33

2

10

0.20

0.10

0.05

0.02

10

0.01
0

1

−5

10

FR4 PCB, standard footprint

−4

10

−3

10

−2

−1

10

1

1010

10

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for

SOT23 (TO-236AB); typical values

7. Characteristics

Table 7. Characteristics

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

EBO

h

V

f

T

C

FE

CEsat

c

collector-base cut-off
current

emitter-base cut-off
current

DC current gain VCE=2V;

collector-emitter
saturation voltage

transition frequency VCE=10V;

collector capacitance VCB=10V;

VCB=60V; IE=0A--10nA

=60V;IE=0A;

V

CB

T

= 150 °C

j

--5µA

VEB=5V; IC=0A --10nA

90 - -

I

= 100 mA

C

=10V;

V

CE

I

=2mA

C

IC= 100 mA;
I

=10mA

B

210 - 340

[1]

- - 250 mV

100 - - MHz

I

= 2 mA;

C

f = 100 MHz

--3pF

I

=0A;

E=ie

f=1MHz

2

006aaa991

tp (s)

3

10

[1] Pulse test: tp≤ 300 µs;δ≤0.02.

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 4 of 10

NXP Semiconductors

2PD601ART

50 V, 100 mA NPN general-purpose transistor

500

h

FE

400

300

200

100

0

−1

10

(1)

(2)

(3)

006aaa992

2

101

IC (mA)

10

VCE=10V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 3. DC current gain as a function of collector

current; typical values

I

(A)

0.1

C

0.08

0.06

0.04

0.02

0

0108462

T

=25°C

amb

IB (mA) = 0.56

Fig 4. Collector current as a function of

collector-emitter voltage; typical values

006aaa993

0.50

0.44

0.38

0.32

0.26

0.20

0.14

0.08

0.02

VCE (V)

006aaa994

2

(mA)

10

101

I

C

V

BEsat

(V)

1.3

0.9

0.5

0.1

(1)

(2)

(3)

−1

10

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 5. Base-emittersaturation voltage as a function of

collector current; typical values

006aaa995

101

IC (mA)

10

V

CEsat

(V)

10

10

1

−1

(1)
(2)

(3)

−2

−1

10

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values

2

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 5 of 10

NXP Semiconductors

8. Package outline

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Fig 7. Package outline SOT23 (TO-236AB)

9. Packing information

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

2PD601ART SOT23 4 mm pitch, 8 mm tape and reel -215 -235

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

04-11-04Dimensions in mm

[1]

3000 10000

[1] For further information and the availability of packing methods, seeSection 13.

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 6 of 10

NXP Semiconductors

10. Soldering

2PD601ART

50 V, 100 mA NPN general-purpose transistor

2.90

2.50

12

3

0.60
(3x)

0.50 (3x)

0.60 (3x)

3.00

0.85

1.30

0.85

1.00

3.30

Fig 8. Reflow soldering footprint SOT23 (TO-236AB)

3.40

1.20 (2x)

4.004.60

1.20

21

3

2.70

sot023

solder lands
solder resist

solder paste

occupied area

Dimensions in mm

solder lands
solder resist
occupied area

Dimensions in mm

2.80

4.50

preferred transport direction during soldering

sot023

Fig 9. Wave soldering footprint SOT23 (TO-236AB)

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 7 of 10

NXP Semiconductors

50 V, 100 mA NPN general-purpose transistor

2PD601ART

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2PD601ART_1 20070315 Product data sheet - -

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 8 of 10

NXP Semiconductors

12. Legal information

12.1 Data sheet status

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title.A short data sheet is intended
for quick referenceonly and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of a NXP Semiconductorsproduct can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

2PD601ART_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 15 March 2007 9 of 10

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2PD601ART

50 V, 100 mA NPN general-purpose transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 15 March 2007

Document identifier: 2PD601ART_1