NXP 2N7002PV Schematic [ru]
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect T ransistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
for drain 1 cm
2
.
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
=10V
V
GS
Tj=25°C;
V
=10V;
GS
= 500 mA
I
D
[1]
--350mA
-11.6Ω
NXP Semiconductors
1
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate1
3D2drain2
4S2source2
5 G2 gate2
6D1drain1
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002PV - plastic surface-mounted package; 6 leads SOT666
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
456
123
D
S
Name Description Version
1
1
G1S
D
2
2
msd90
G
2
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002PV ZF
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-60V
amb
=25°C-±20 V
amb
drain current VGS=10V
T
=25°C-350mA
amb
=100°C-250mA
T
amb
peak drain current T
amb
=25°C;
single pulse; tp≤ 10 μs
[1]
-1.2A
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 2 of 16
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
Source-drain diode
I
S
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
total power dissipation T
source current T
total power dissipation T
=25°C
amb
=25°C - 1090 mW
T
sp
=25°C
amb
=25°C
amb
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
[2]
-330mW
[1]
-390mW
[1]
-350mA
[2]
-500mW
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
100 %×= I
P
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 3 of 16
NXP Semiconductors
017aaa063
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
10
I
D
(A)
1
(1)
(2)
−1
10
(3)
(4)
−2
10
−3
10
−1
10
I
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
(4) DC; T
= 100 ms
(5) t
p
(6) DC; T
= single pulse
=25°C
sp
=25°C; drain mounting pad 1 cm
amb
2
101
VDS (V)
Fig 3. Per transistor: Safe operating area ; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
(5)
(6)
2
10
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
in free air
[1]
- 330 380 K/W
[2]
- 280 320 K/W
--115K/W
[1]
- - 250 K/W
2
.
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 4 of 16
NXP Semiconductors
017aaa064
3
10
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.02
0
0.01
0.2
−2
−1
10
10110
2
10
tp (s)
3
10
Z
(K/W)
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa065
Z
th(j-a)
(K/W)
3
10
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.05
0.1
0.02
0
10
1
−3
10
FR4 PCB, mounting pad for drain 1 cm
0.01
−2
−1
10
2
10110
2
10
tp (s)
3
10
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 5 of 16
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