2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect T ransistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
for drain 1 cm
2
.
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
=10V
V
GS
Tj=25°C;
V
=10V;
GS
= 500 mA
I
D
[1]
--350mA
-11.6Ω
NXP Semiconductors
1
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate1
3D2drain2
4S2source2
5 G2 gate2
6D1drain1
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002PV - plastic surface-mounted package; 6 leads SOT666
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
456
123
D
S
Name Description Version
1
1
G1S
D
2
2
msd90
G
2
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002PV ZF
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-60V
amb
=25°C-±20 V
amb
drain current VGS=10V
T
=25°C-350mA
amb
=100°C-250mA
T
amb
peak drain current T
amb
=25°C;
single pulse; tp≤ 10 μs
[1]
-1.2A
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 2 of 16
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
Source-drain diode
I
S
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
total power dissipation T
source current T
total power dissipation T
=25°C
amb
=25°C - 1090 mW
T
sp
=25°C
amb
=25°C
amb
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
[2]
-330mW
[1]
-390mW
[1]
-350mA
[2]
-500mW
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
100 %×= I
P
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 3 of 16
NXP Semiconductors
017aaa063
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
10
I
D
(A)
1
(1)
(2)
−1
10
(3)
(4)
−2
10
−3
10
−1
10
I
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
(4) DC; T
= 100 ms
(5) t
p
(6) DC; T
= single pulse
=25°C
sp
=25°C; drain mounting pad 1 cm
amb
2
101
VDS (V)
Fig 3. Per transistor: Safe operating area ; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
(5)
(6)
2
10
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
in free air
[1]
- 330 380 K/W
[2]
- 280 320 K/W
--115K/W
[1]
- - 250 K/W
2
.
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 4 of 16
NXP Semiconductors
017aaa064
3
10
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.02
0
0.01
0.2
−2
−1
10
10110
2
10
tp (s)
3
10
Z
(K/W)
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa065
Z
th(j-a)
(K/W)
3
10
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.05
0.1
0.02
0
10
1
−3
10
FR4 PCB, mounting pad for drain 1 cm
0.01
−2
−1
10
2
10110
2
10
tp (s)
3
10
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 5 of 16
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Static characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DSon
g
fs
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
[1] Pulse test: tp≤ 300 μs; δ≤0.01.
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current VDS=60V; VGS=0V
gate leakage current VGS= ±20 V; VDS= 0 V - - 100 nA
drain-source on-state
resistance
forward
transconductance
total gate charge ID=300mA;
gate-source charge - 0.2 - nC
gate-drain charge - 0.2 - nC
input capacitance VGS=0V; VDS=10V;
output capacitance - 7 - pF
reverse transfer
capacitance
turn-on delay time VDD=50V;
rise time -4-ns
turn-off delay time - 10 20 ns
fall time - 5 - ns
source-drain voltage IS=115mA; VGS= 0 V 0.47 0.75 1.1 V
ID=10μA; VGS=0V 60--V
ID=250μA; VDS=V
=25°C --1μA
T
j
= 150 °C --10μA
T
j
GS
1.1 1.75 2.4 V
[1]
VGS=5V; ID=50mA - 1.3 2 Ω
=10V; ID=500mA - 1 1.6 Ω
V
GS
VDS=10V; ID= 200 mA
[1]
- 400 - mS
-0.60.8nC
VDS=30V;
VGS=4.5V
- 3050pF
f=1MHz
-4-pF
- 36ns
RL=250Ω;
=10V;
V
GS
=6Ω
R
G
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 6 of 16
NXP Semiconductors
017aaa017
017aaa018
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
0.7
VGS = 4.0 V
I
D
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 4.03.01.0 2.0
T
=25°CT
amb
3.5 V
3.25 V
3.0 V
2.75 V
2.5 V
VDS (V)
Fig 6. Per transistor: Output characteristics: drain
current as a function of drain-source voltage;
typical values
−3
10
I
D
(A)
−4
10
(3)
VGS (V)
−5
10
−6
10
0321
amb
(2)(1)
=25°C; VDS=5V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Per transistor: Sub-threshold drain current as
a function of gate-source voltage
017aaa019
(2)
(3)
(5)
(4)
ID (A)
R
DSon
(Ω)
10.0
(1) V
(2) V
(3) V
(4) V
(5) V
7.5
5.0
2.5
0.0
0.0 1.00.80.4 0.60.2
T
amb
GS
GS
GS
GS
GS
=25°C
=3.25V
=3.5V
=4V
=5V
=10V
(1)
Fig 8. Per transistor: Drain-source on-state
resistance as a function of drain current;
typical values
017aaa020
(1)
(2)
VGS (V)
R
DSon
(Ω)
6.0
4.0
2.0
0.0
(1) T
(2) T
0.0 10.08.04.0 6.02.0
I
=500mA
D
= 150 °C
amb
=25°C
amb
Fig 9. Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 7 of 16
NXP Semiconductors
017aaa021
017aaa022
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
1.0
I
D
(A)
0.8
0.6
0.4
0.2
0.0
0.0 5.04.02.0 3.01.0
VDS>ID× R
(1) T
(2) T
amb
amb
(2) (1)
DSon
=25°C
= 150 °C
(1) (2)
VGS (V)
Fig 10. Per transistor: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
3.0
017aaa023
2.4
a
1.8
1.2
0.6
0.0
−60 180120060
R
DSon
-----------------------------
a
=
R
DSon 25°C()
T
(°C)
amb
Fig 11. Per transistor: Normalized drain-source
on-state resistance as a function of ambient
temperature; typical values
2
10
017aaa024
V
GS(th)
(V)
2.0
1.0
0.0
−60 180120060
ID= 0.25 mA; VDS=V
(1)
(2)
(3)
T
(°C)
amb
GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Per transistor: Gate-so ur c e thr e shold voltage
as a function of ambient temperature
GS
(1)
(2)
(3)
=0V
2
101
VDS (V)
10
C
(pF)
(1) C
(2) C
(3) C
10
1
10
−1
f=1MHz; V
iss
oss
rss
Fig 13. Per transistor: Input, output and reverse
transfer capacitances as a function of
drain-source voltage; typical values
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 8 of 16
NXP Semiconductors
8
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
5.0
V
GS
(V)
4.0
3.0
2.0
1.0
0.0
0.0 0.80.60.2 0.4
ID= 300 mA; VDS=30V; T
amb
017aaa025
QG (nC)
=25°C
Fig 14. Per transistor: Gate-source voltage as a
function of gate charge; typical values
1.2
I
S
(A)
V
DS
I
D
V
GS(pl)
V
GS(th)
V
GS
Q
GS1QGS2
Q
G(tot)
Q
GD
003aaa50
Q
GS
Fig 15. Per transistor: Gate charg e wa v efo r m
definitions
017aaa026
0.8
(1) (2)
0.4
0.0
0.0 1.20.80.4
VSD (V)
VGS=0V
amb
amb
= 150 °C
=25°C
(1) T
(2) T
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 9 of 16
NXP Semiconductors
8. Test information
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
t
t
006aaa812
1
t
2
P
t
1
duty cycle δ =
t
2
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 10 of 16
NXP Semiconductors
6
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads SOT66
D
S
YS
A
E
H
E
X
456
pin 1 index
123
e
b
1
p
e
w M
A
A
c
L
p
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
OUTLINE
VERSION
SOT666
A
0.6
0.5
0.27
0.17
cD
p
0.18
1.7
0.08
1.5
IEC JEDEC JEITA
E
1.3
1.1
e
1.0
REFERENCES
0.5
e
H
L
w
1
1.7
1.5
p
E
0.3
0.1y0.1
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 18. Package outline SOT666
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 11 of 16
NXP Semiconductors
fr
10. Soldering
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
2.75
2.45
2.1
1.6
0.538
1.075
1.72
0.55
(2×)
1.7
0.45
(4×)
0.5
(4×)
Reflow soldering is the only recommended soldering method.
Fig 19. Reflow soldering footprint SOT666
0.6
(2×)
0.65
(2×)
0.4
(6×)
0.25
(2×)
0.325
(4×)
0.3
(2×)
0.375
(4×)
solder lands
placement area
solder paste
occupied area
Dimensions in mm
sot666_
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 12 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2N7002PV v.1 20100805 Product data sheet - -
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 13 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
, unless otherwise
2N7002PV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 14 of 16
NXP Semiconductors
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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Product data sheet Rev. 1 — 5 August 2010 15 of 16
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Contact information. . . . . . . . . . . . . . . . . . . . . 15
14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2N7002PV
60 V, 350 mA N-channel Trench MOSFET
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 August 2010
Document identifier: 2N7002PV
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