NXP 2N7002PT Schematic [ru]
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 2 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
2
for drain 1 cm
.
=25C--60V
amb
=25C--20 V
amb
=25C;
amb
=10V
V
GS
Tj=25C;
=10V;
V
GS
I
= 500 mA
D
[1]
--310mA
-11.6
NXP Semiconductors
12
3
S
D
G
mbb076
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002PT SC-75 plastic surface-mounted package; 3 leads SOT416
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Name Description Version
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002PT Z1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25C-60V
amb
=25C-20 V
amb
drain current VGS=10V
T
=25C-310mA
amb
=100C-240mA
T
amb
peak drain current T
amb
=25C;
single pulse; t
10 s
p
[1]
-1.2A
2N7002PT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 July 2010 2 of 16
NXP Semiconductors
T
amb
(°C)
−75 17512525 75−25
017aaa001
40
80
120
P
der
(%)
0
T
amb
(°C)
−75 17512525 75−25
017aaa002
40
80
120
I
der
(%)
0
P
der
P
tot
P
tot 25C
----------------------- -
100 %=
I
der
I
D
I
D25 C
------------------- -
100 %=
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
total power dissipation T
=25C
amb
=25C-770mW
T
sp
junction temperature 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C
[2]
-250mW
[1]
-300mW
Source-drain diode
I
S
source current T
amb
=25C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[1]
-310mA
Fig 1. Normalized total power dissipation as a
function of ambient temperature
2N7002PT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Fig 2. Normalized continuous drain current as a
function of ambient temperature
Product data sheet Rev. 1 — 2 July 2010 3 of 16
NXP Semiconductors
017aaa030
10
−1
10
−2
1
10
I
D
(A)
10
−3
VDS (V)
10
−1
10
2
101
(1)
(2)
(3)
(4)
(5)
(6)
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
= single pulse
I
DM
= 100 s
(1) t
p
=1ms
(2) t
p
(3) t
=10ms
p
(4) DC; T
(5) t
(6) DC; T
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
=25C
sp
= 100 ms
p
=25C; drain mounting pad 1 cm
amb
drain-source voltage
2
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
in free air
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2N7002PT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 July 2010 4 of 16
[1]
- 440 510 K/W
[2]
- 360 415 K/W
- - 160 K/W
2
.
NXP Semiconductors
017aaa031
tp (s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa032
tp (s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
2N7002PT
60 V, 310 mA N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical valu es
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical valu es
2N7002PT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 2 July 2010 5 of 16
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