NXP 2N7002P Schematic [ru]

2N7002P

60 V, 360 mA N-channel Trench MOSFET

Rev. 02 — 29 July 2010 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic p ackage using Trench MOSFET technology.

1.2 Features and benefits

 AEC-Q101 qualified  Logic-level compatible

 Trench MOSFET technology  Very fast switching

1.3 Applications

 High-speed line driver  Low-side loadswitch

 Relay driver  Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

DSon

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

drain-source voltage

gate-source voltage

drain current VGS=10V; T

drain-source on-state resistance

=25°C --60V

amb

-20 - 20 V

=25°C

amb

VGS=10V; ID=500mA; Tj= 25 °C; pulsed; tp≤ 300 µs; δ≤0.01

[1]

--360mA

-11.6Ω

NXP Semiconductors

2. Pinning information

2N7002P

60 V, 360 mA N-channel Trench MOSFET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate 2Ssource

3 D drain

SOT23 (TO-236AB)

bb076

3. Ordering information

Table 3. Ordering information

Type number Package

2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23

Name Description Version

4. Marking

Table 4. Marking codes

Type number Marking code

2N7002P LW %

[1]

[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

amb

stg

Source-drain diode

drain-source voltage T gate-source voltage -20 20 V drain current VGS=10V; T

peak drain current T total power dissipation T

junction temperature - 150 °C ambient temperature -55 150 °C storage temperature -65 150 °C

source current T

=25°C - 60 V

amb

=25°C

amb

=10V; T

= 25 °C; single pulse; tp≤ 10 µs - 1.2 A

amb

=25°C

amb

=25°C - 1140 mW

=25°C

amb

= 100 °C

[1] [1]

[2] [1]

[1]

- 360 mA

- 280 mA

- 350 mW

- 420 mW

- 360 mA

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

Product data sheet Rev. 02 — 29 July 2010 2 of 15

NXP Semiconductors

017aaa014

60 V, 360 mA N-channel Trench MOSFET

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2N7002P

120

der

(%)

−75 17512525 75−25

017aaa001

(°C)

amb

Fig 1. Normalized total power dissipation as a

function of ambient temperature

(A)

120

der

(%)

−75 17512525 75−25

017aaa002

(°C)

amb

Fig 2. Normalized continuous drain current as a

function of ambient temperature

(1)

(2)

−1

−2

−3

−1

101

VDS (V)

(3)

(4) (5)

(6)

IDM = single pulse (1) tp = 100 μs (2) t

= 1 ms

(3) t

= 10 ms

(4) tp = 100 ms (5) DC; T (6) DC; T

= 25 °C

= 25 °C; drain mounting pad 1 cm

amb

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

Product data sheet Rev. 02 — 29 July 2010 3 of 15

NXP Semiconductors

017aaa016

6. Thermal characteristics

2N7002P

60 V, 360 mA N-channel Trench MOSFET

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-sp)

thermal resistance from junction to ambient

thermal resistance

in free air

[1] [2]

- 310 370 K/W

- 260 300 K/W

--115K/W from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

th(j-a)

duty cycle = 1

0.75

0.5

0.33

0.25

0.1

0.05

0.02

0.01

0.2

(K/W)

017aaa015

−3

−2

−1

10110

tp (s)

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

−3

0.25

0.1

0.33

0.2

0.05

0.02

0.01

−2

FR4 PCB, mounting pad for drain 1 cm

−1

10110

tp (s)

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet Rev. 02 — 29 July 2010 4 of 15

NXP Semiconductors

7. Characteristics

2N7002P

60 V, 360 mA N-channel Trench MOSFET

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

drain-source

ID=10µA; VGS=0V; Tj=25°C 60--V

breakdown voltage

GSth

gate-source threshold

ID=250µA; VDS=VGS; Tj= 25 °C 1.1 1.75 2.4 V

voltage

DSS

GSS

DSon

drain leakage current VDS=60V; VGS=0V; Tj=25°C --1µA

=60V; VGS=0V; Tj=150°C --10µA

gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - - 100 nA

=-20V; VDS=0V; Tj= 25 °C - - 100 nA

drain-source on-state resistance

VGS=5V; ID= 50 mA; pulsed; tp≤ 300 µs; δ≤0.01 ; Tj=25°C

=10V; ID= 500 mA; pulsed;

-1.32Ω

-11.6Ω

tp≤ 300 µs; δ≤0.01 ; Tj=25°C

forward transconductance

VDS=10V; ID= 200 mA; pulsed;

≤ 300 µs; δ≤0.01 ; Tj=25°C

- 400 - mS

Dynamic characteristi cs

Q Q Q C C C

G(tot) GS

GD iss oss rss

total gate charge ID=300mA; VDS=30V; VGS=4.5V; gate-source charge - 0.2 - nC

Tj=25°C

-0.60.8nC

gate-drain charge - 0.2 - nC input capacitance VGS=0V; VDS=10V; f=1MHz; output capacitance - 7 - pF

Tj=25°C

reverse transfer

- 3050pF

-4-pF

capacitance

d(on)

d(off)

turn-on delay time VDS=50V; RL= 250 Ω; VGS=10V;

=6Ω; Tj=25°C

rise time - 4 - ns

G(ext)

turn-off delay time - 10 20 ns fall time -5-ns

- 36ns

Source-drain diode

source-drain voltage IS=115mA; VGS=0V; Tj= 25 °C 0.47 0.75 1.1 V

Product data sheet Rev. 02 — 29 July 2010 5 of 15

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