NXP 2N7002CK Schematic [ru]
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009 Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
n Logic-level compatible
n Very fast switching
n Trench MOSFET technology
n ESD protection up to 3 kV
1.3 Applications
n Relay driver
n High-speed line driver
n Low-side loadswitch
n Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
D
I
DM
R
DS
DSon
drain-source voltage - - 60 V
drain current - - 300 mA
peak drain current single pulse;
t
≤ 10 µs
p
drain-source on-state
resistance
VGS=10V;
I
= 500 mA
D
- - 1.2 A
- 1.1 1.6 Ω
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
3
12
Name Description Version
G
D
S
017aaa000
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002CK LP*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 2 of 13
NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
j
T
amb
T
stg
Source-drain diode
I
S
I
SM
ElectroStatic Discharge (ESD)
V
ESD
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V
gate-source voltage - ±20 V
drain current VGS=10V
=25°C - 300 mA
T
amb
= 100 °C - 190 mA
T
amb
peak drain current T
total power dissipation T
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
source current T
peak source current T
electrostatic discharge
voltage
=25°C; tp≤ 10 µs - 1.2 A
amb
=25°C
amb
=25°C - 200 mA
amb
=25°C; tp≤ 10 µs - 1.2 A
amb
all pins;
[1]
- 350 mW
-3kV
human body model;
C = 100 pF;
R = 1.5 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
P
der
----------------------- -
P
tot 25°C()
100 %×= I
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
--------------------
I
D25°C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 3 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
017aaa003
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
10
(A)
10
I
D
1
−1
10
−2
10
−1
10
Limit R
DSon
= VDS/I
D
DC
101
VDS (V)
Tsp=25°C; IDM= single pulse; VGS=10V
Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function of
drain-source voltage
017aaa004
tp = 10 µs
(A)
10
I
D
1
Limit R
DSon
= VDS/I
D
2
−1
10
DC
−2
10
−3
10
−1
10
T
=25°C; IDM= single pulse; VGS=10V
amb
101
VDS (V)
Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- 350 500 K/W
100 µs
1 ms
10 ms
100 ms
2
10
2N7002CK_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 September 2009 4 of 13
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