NXP 2N7002CK Schematic [ru]

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 — 11 September 2009 Product data sheet

1. Product proﬁle

1.1 General description

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features

n Logic-level compatible n Very fast switching n Trench MOSFET technology n ESD protection up to 3 kV

1.3 Applications

n Relay driver n High-speed line driver n Low-side loadswitch n Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V I

DSon

drain-source voltage - - 60 V drain current - - 300 mA peak drain current single pulse;

≤ 10 µs

drain-source on-state resistance

VGS=10V; I

= 500 mA

- - 1.2 A

- 1.1 1.6 Ω

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2. Pinning information

Table 2. Pinning

Pin Symbol Description Simpliﬁed outline Graphic symbol

1 G gate 2 S source 3 D drain

3. Ordering information

Table 3. Ordering information

Type number Package

2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Name Description Version

017aaa000

4. Marking

Table 4. Marking codes

Type number Marking code

2N7002CK LP*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

[1]

Product data sheet Rev. 01 — 11 September 2009 2 of 13

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5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

amb

stg

Source-drain diode

ElectroStatic Discharge (ESD)

ESD

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V gate-source voltage - ±20 V drain current VGS=10V

=25°C - 300 mA

amb

= 100 °C - 190 mA

amb

peak drain current T total power dissipation T junction temperature 150 °C ambient temperature −55 +150 °C storage temperature −65 +150 °C

source current T peak source current T

electrostatic discharge voltage

=25°C; tp≤ 10 µs - 1.2 A

amb

=25°C

amb

=25°C - 200 mA

amb

=25°C; tp≤ 10 µs - 1.2 A

amb

all pins;

[1]

- 350 mW

-3kV human body model; C = 100 pF; R = 1.5 kΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

120

der

(%)

−75 17512525 75−25

tot

der

----------------------- -

tot 25°C()

100 %×= I

017aaa001

(°C)

amb

Fig 1. Normalized total power dissipation as a

function of ambient temperature

120

der

(%)

−75 17512525 75−25

der

--------------------

D25°C()

100 %×=

017aaa002

(°C)

amb

Fig 2. Normalized continuous drain current as a

function of ambient temperature

Product data sheet Rev. 01 — 11 September 2009 3 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

017aaa003

tp = 10 µs

100 µs

1 ms 10 ms

100 ms

(A)

−1

−2

−1

Limit R

DSon

= VDS/I

101

VDS (V)

Tsp=25°C; IDM= single pulse; VGS=10V

Fig 3. Safe operating area; junction to solder point; continuous and peak drain currents as a function of

drain-source voltage

017aaa004

tp = 10 µs

(A)

Limit R

DSon

= VDS/I

−1

−2

−3

−1

=25°C; IDM= single pulse; VGS=10V

amb

101

VDS (V)

Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of

drain-source voltage

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

in free air

[1]

- 350 500 K/W

100 µs

1 ms 10 ms

100 ms

Product data sheet Rev. 01 — 11 September 2009 4 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 7. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

DSS

GSS

DSon

Dynamic characteristics

G(tot)

iss

oss

rss

d(on)

d(off)

Source-drain diode

…continued

thermal resistance from junction to solder point

=25°C unless otherwise speciﬁed.

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current VDS=60V; VGS=0V

gate leakage current VGS= ±20 V; VDS=0V - - 5 µA

drain-source on-state resistance

total gate charge ID= 200 mA; gate-source charge - 0.22 - nC gate-drain charge - 0.23 - nC input capacitance VGS=0V; VDS=25V; output capacitance - 11 20 pF reverse transfer

capacitance turn-on delay time VDS=15V; rise time - 8 15 ns turn-off delay time - 38 50 ns fall time - 22 35 ns

source-drain voltage IS= 200 mA; VGS= 0 V 0.47 0.79 1.1 V

- - 150 K/W

ID=10µA; VGS=0V

=25°C 60--V

= −55 °C 55--V

ID= 250 µA; VDS=VGS; T

=25°C

=25°C - - 100 nA

= 150 °C --1µA

= ±10 V; VDS= 0 V - 50 450 nA

= ±5 V; VDS= 0 V - - 100 nA

1 1.75 2.5 V

VGS= 4.5 V; I

= 200 mA

=25°C - 1.3 3 Ω

= 150 °C - 2.8 4.4 Ω

=10V;ID= 500 mA - 1.1 1.6 Ω

- 1.09 1.3 nC

=10V;

= 4.5 V

- 47.2 55 pF

f=1MHz

- 5 7.5 pF

- 8 15 ns

=15Ω;

=10V;

=6Ω

Product data sheet Rev. 01 — 11 September 2009 5 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

1.0

(A)

0.8

0.6

0.4

0.2

0.0 04312

(2)(1)

017aaa005

(3)

(4)

(5)

VDS (V)

Tj=25°C

(1) VGS=10V (2) VGS=5V (3) VGS= 4.5 V (4) VGS=4V (5) VGS= 3.5 V

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

−3

(A)

−4

−5

−6

0321

(2)(1)

017aaa006

(3)

VGS (V)

Tj=25°C; VDS=5V (1) minimum values (2) typical values (3) maximum values

Fig 6. Sub-threshold drain current as a function of

gate-source voltage

017aaa007

(1)

(2)

(3)

(4)

ID (A)

DSon

(Ω)

2.5

2.0

1.5

1.0

0.5

0.0 1.00.80.4 0.60.2

Tj=25°C (1) VGS=4V (2) VGS= 4.5 V (3) VGS=5V (4) VGS=10V

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

017aaa008

(1)

(2)

(3)

VGS (V)

DSon

(Ω)

0108462

ID= 500 mA (1) Tj= 150 °C (2) Tj=25°C (3) Tj= −55 °C

Fig 8. Drain-source on-resistance as a function of

gate-source voltage; typical values

Product data sheet Rev. 01 — 11 September 2009 6 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

2.4

1.8

1.2

0.6

0.0

−60 180120060

DSon

----------------------------- -

DSon 25°C()

017aaa009

Tj (°C)

Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature

GS(th)

(V)

−60 180120060

(1)

(2)

(3)

ID= 0.25 mA; VDS=V

017aaa010

Tj (°C)

(1) maximum values (2) typical values (3) minimum values

Fig 10. Gate-source threshold voltage as a function of

junction temperature

017aaa011

101

VDS (V)

(pF)

(1)

(2)

−1

(3)

VGS= 0 V; f = 1 MHz

(1) C

iss

(2) C

oss

(3) C

rss

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Product data sheet Rev. 01 — 11 September 2009 7 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

(V)

0.0 1.20.80.4

017aaa012

QG (nC)

ID= 200 mA; VDD= 30 V; Tj=25°CV

Fig 12. Gate-source voltage as a function of gate

charge; typical values

1.0

(A)

0.8

0.6

0.4

0.2

0.0

0.2 1.21.00.6 0.80.4

(1) (2) (3)

=0V

017aaa013

VSD (V)

(1) Tj= 150 °C (2) Tj=25°C (3) Tj= −55 °C

Fig 13. Source current as a function of source-drain

voltage; typical values

Product data sheet Rev. 01 — 11 September 2009 8 of 13

NXP Semiconductors

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

8. Package outline

Plastic surface-mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.95

Qwv

2.5

2.1

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04 06-03-16

Fig 14. Package outline SOT23 (TO-236AB)

Product data sheet Rev. 01 — 11 September 2009 9 of 13

NXP Semiconductors

9. Soldering

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

3.3

2.9

1.9

solder lands

1.7

0.7

(3×)

0.5

(3×)

0.6

(3×)

0.6

(3×)

Fig 15. Reﬂow soldering footprint SOT23 (TO-236AB)

2.2

1.2

(2×)

1.4

(2×)

Dimensions in mm

solder resist

solder paste

occupied area

sot023_fr

solder lands

4.6

2.6

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

solder resist

occupied area

sot023_fw

Fig 16. Wave soldering footprint SOT23 (TO-236AB)

Product data sheet Rev. 01 — 11 September 2009 10 of 13

NXP Semiconductors

60 V, 0.3 A N-channel Trench MOSFET

2N7002CK

10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002CK_1 20090911 Product data sheet - -

Product data sheet Rev. 01 — 11 September 2009 11 of 13

NXP Semiconductors

11. Legal information

11.1 Data sheet status

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may havechanged since this document was published and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

11.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability forthe consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) andtitle. A shortdata sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Deﬁnition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 01 — 11 September 2009 12 of 13

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13. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

11.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Contact information. . . . . . . . . . . . . . . . . . . . . 12

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2N7002CK

60 V, 0.3 A N-channel Trench MOSFET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 September 2009

Document identifier: 2N7002CK_1

NXP 2N7002CK Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Soldering

10. Revision history

11. Legal information

11.1 Data sheet status

11.3 Disclaimers

11.4 Trademarks

12. Contact information

13. Contents