NXP 2N7002BKS Schematic [ru]
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
Rev. 2 — 23 September 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
=10V
V
GS
Tj=25°C;
=10V;
V
GS
I
= 500 mA
D
[1]
--300mA
-11.6Ω
NXP Semiconductors
5
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1S1source1
2 G1 gate 1
3D2drain2
4S2source2
5 G2 gate 2
6D1drain1
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
4
56
6
5
132
1
2
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002BKS SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002BKS ZT*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
3
017aaa05
Name Description Version
[1]
4
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
V
GS
I
D
2N7002BKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 23 September 2010 2 of 16
drain-source voltage T
gate-source voltage T
drain current VGS=10V
=25°C-60V
amb
=25°C-±20 V
amb
[1]
T
=25°C-300mA
amb
=100°C-215mA
T
amb
NXP Semiconductors
017aaa001
017aaa002
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
DM
P
tot
Source-drain diode
I
S
ESD maximum rating
V
ESD
Per device
P
tot
T
j
T
amb
T
stg
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
peak drain current T
total power dissipation T
source current T
electrostatic discharge
voltage
total power dissipation T
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
amb
=25°C;
-1.2A
single pulse; tp≤ 10 μs
=25°C
amb
=25°C - 1040 mW
T
sp
=25°C
amb
human body model
=25°C
amb
[2]
-295mW
[1]
-340mW
[1]
-300mA
[3]
- 2000 V
[2]
-445mW
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
120
P
der
(%)
80
40
0
−75 17512525 75−25
der
----------------------- -
P
P
P
tot
tot 25°C()
100 %×= I
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
------------------- -
der
I
I
D
D25° C()
100 %×=
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002BKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 23 September 2010 3 of 16
NXP Semiconductors
017aaa056
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
10
I
D
(A)
1
−1
10
−2
10
−3
10
−1
10
I
= single pulse
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
=10ms
(3) t
p
(4) DC; T
(5) t
(6) DC; T
sp
= 100 ms
p
amb
=25°C
=25°C; drain mounting pad 1 cm
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
Limit R
DSon
2
= VDS/I
D
101
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
2
10
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
in free air
[1]
- 370 425 K/W
[2]
- 320 370 K/W
- - 120 K/W
[1]
- - 275 K/W
2
.
2N7002BKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 23 September 2010 4 of 16
NXP Semiconductors
017aaa057
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
3
10
Z
(K/W)
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
duty cycle = 1
th(j-a)
10
2
10
1
−3
10
0.5
0.25
0.1
0
0.75
0.33
0.2
0.05
0.02
0.01
FR4 PCB, standard footprint
−2
−1
10
10110
2
10
tp (s)
10
3
tp (s)
017aaa058
3
10
3
10
th(j-a)
10
2
10
1
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.05
0.02
0.01
0
0.2
−2
Z
(K/W)
FR4 PCB, mounting pad for drain 1 cm
−1
10
2
10110
2
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
2N7002BKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 23 September 2010 5 of 16
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