NXP 2N7002BKM Schematic [ru]
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
Rev. 1 — 25 October 2010 Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
V
I
D
R
DS
GS
DSon
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad fordrain 1 cm2.
[2] Pulse test: t
≤ 300 μs; δ≤0.01.
p
=25°C--60V
amb
=25°C--±20 V
amb
=25°C;
amb
V
=10V
GS
Tj=25°C;
=10V;
V
GS
= 500 mA
I
D
[1]
--450mA
[2]
-11.6Ω
NXP Semiconductors
0
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
2N7002BKM SC-101 leadless ultra small plastic package; 3 solder lands;
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
1
2
Transparent
top view
3
G
Name Description Version
body 1.0 × 0.6 × 0.5 mm
D
S
017aaa00
SOT883
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002BKM Z8
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-60V
amb
=25°C-±20 V
amb
drain current VGS=10V
T
=25°C-450mA
amb
=100°C-220mA
T
amb
peak drain current T
amb
=25°C;
single pulse; tp≤ 10 μs
[1]
-1.2A
2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 25 October 2010 2 of 16
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
Source-drain diode
I
S
ESD maximum rating
V
ESD
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
total power dissipation T
=25°C
amb
=25°C - 2700 mW
T
sp
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
source current T
electrostatic discharge
=25°C
amb
human body model
voltage
[2]
-360mW
[1]
-715mW
[1]
-450mA
[3]
- 2000 V
120
P
der
(%)
80
40
0
−75 17512525 75−25
P
tot
der
----------------------- -
P
tot 25°C()
100 %×= I
P
017aaa001
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
120
I
der
(%)
80
40
0
−75 17512525 75−25
der
I
D
------------------- -
I
D25° C()
100 %×=
017aaa002
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 25 October 2010 3 of 16
NXP Semiconductors
017aaa108
10
I
D
(A)
1
Limit R
DSon
= VDS/I
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
D
(1)
−1
10
−2
10
-1
10
I
DM
= 100 μs
(1) t
p
=1ms
(2) t
p
(3) DC; T
=10ms
(4) t
p
= 100 ms
(5) t
p
(6) DC; T
= single pulse
=25°C
sp
=25°C; drain mounting pad 1 cm
amb
2
101
VDS (V)
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
- 305 350 K/W
[2]
- 150 175 K/W
--40K/W
(2)
(3)
(4)
(5)
(6)
2
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
.
Product data sheet Rev. 1 — 25 October 2010 4 of 16
NXP Semiconductors
017aaa109
3
10
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
10
10
2
−3
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.05
0.1
0.02
0.01
0
0.2
−2
−1
10
10110
2
10
tp (s)
3
10
Z
th(j-a)
(K/W)
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
017aaa110
Z
th(j-a)
(K/W)
10
10
3
2
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.2
0.05
0
10
−3
10
FR4 PCB, mounting pad for drain 1 cm
0.02
0.01
−2
−1
10
2
10110
2
10
tp (s)
3
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
2N7002BKM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 25 October 2010 5 of 16
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