NTE NTE5556, NTE5554, NTE5550, NTE5552 Datasheet
NTE5550 thru NTE5558
Silicon Controlled Rectifiers
Description:
The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications,
such as motor controls, heating controls and power supply crowbar circuits.
Features:
D Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability.
D Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation
and Durability.
D Blocking Voltage to 800 Volts
D 300A Surge Current Capability
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), V
RRM
NTE5550 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5552 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5554 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5556 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5558 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (TC = +85°C), I
T(RMS)
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(All Conduction Angles), I
T(AV)
16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Surge Current (8.3ms), I
TSM
300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(1/2 Cycle, Sine Wave, 1.5ms) 350A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Power, P
GM
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, P
G(AV)
0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Current, I
GM
2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. V
RRM
for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.
Electrical Characteristics: (TC = +25°C unless otherwise noted.)
Parameter Symbol Min Typ Max Unit
Peak Forward Blocking Voltage, (TJ = +125°C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
V
DRM
50
200
400
600
800
–
–
–
–
–
–
–
–
–
–
V
Peak Forward or Reverse Blocking Current,
(Rated V
DRM
or V
RRM
)T
J
= +25°C
TJ = +125°C
I
DRM
, I
RRM
–
–
–
–
102µA
mA
Forward “ON” Voltage, (ITM = 50A, Note 2) V
TM
– – 1.8 V
Gate Trigger Current (Continuous DC), TC = +25°C
(Anode Voltage = 12Vdc, RL = 100Ω) TC = –40°C
I
GT
–
–
–
254075
mA
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, RL = 100Ω, TC = –40°C)
V
GT
– 1 1.5 V
Gate Non–Trigger Voltage
(Anode Voltage = Rated V
DRM
, RL =100Ω, TJ = +125°C)
V
GD
0.2 – – V
Holding Current
(Anode Voltage = 12Vdc, TC = –40°C)
I
H
– 35 40 mA
Turn–On Time
(ITM = 25A, IGT = 50mAdc)
t
gt
– 1.5 2 µs
Turn–Off Time (V
DRM
= rated voltage)
(ITM =25A, IR = 25A)
(ITM =25A, IR = 25A, TJ = +125°C)
t
q
–
–
15
35
–
–
µs
Critical Rate of Rise of Off–State Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
dv/dt – 50 – V/µs
Note 2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode/Tab
Gate
.147 (3.75)
Dia Max
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