NTE NTE5540, NTE5539 Datasheet
NTE5539 & NTE5540
Silicon Controlled Rectifier (SCR)
55 Amps
Features:
D High Voltage Capability
D High Surge Capability
D Glass Passivated Chip
Electrical Characteristics: (TA = +25°C, 60Hz, Resistive load unless otherwise specified)
Repetitive Peak Off–State Forward & Reverse Voltage, V
NTE5539 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum RMS On–State Current, I
Average On–State Current, I
T(AV)
DC Gate Trigger Current (VD = 12V, RL = 30Ω), I
T(RMS)
GT
Minimum 5mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum 40mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Off–State Forward & Reverse Current (At rated V
(TC = +25°C)
NTE5539 10µA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 20µA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TC = +100°C)
NTE5539 1.0mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 1.5mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TC = +125°C)
NTE5539 2.0mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 3.0mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak On–State Voltage (I
T(RMS)
= 55A, TC = +25°C), V
TM
Maximum DC Gate Trigger Voltage (TC = +25°C, VD = 12V, RL = 30Ω), V
Minimum DC Gate Trigger Voltage (TC = +125°C, VD = 12V, RL = 30Ω), V
Maximum DC Holding Current (Gate Open, Initial On–State Current = 400mA(DC)), I
Peak Gate Current (Pulse Width ≤ 10µs), I
Peak Gate Power Dissipation (Pulse Width ≤ 10µs), P
Average Gate Power Dissipation, P
G(AV)
Peak One Cycle Surge Forward Current, I
GM
GM
TSM
50Hz 550A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60Hz 650A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Minimum Critical Rate–of–Applied Forward Voltage, dv/dt
(TC = +100°C)
NTE5539 650V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 500V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TC = +125°C)
NTE5539 550V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5540 475V/µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
, V
RRM
DRM
, V
RRM
GT
GT
), I
DRM,
I
RRM
H
55A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5V. . . . . . . . . . . . . .
0.2V. . . . . . . . . . . . . .
60mA. . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
800mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TA = +25°C, 60Hz, Resistive load unless otherwise specified)
RMS Surge (Non–Repetitive) On–State Current for Fusing (8.3ms), I2t 1750A2sec. . . . . . . . . . . . . .
Maximum Rate–of–Change of On–State Current (IGT = 150mA, tr = 0.1µs), di/dt 175A/µs. . . . . . .
Gate Controlled Turn–On Time (Gate Pulse = 150mA, Min Width = 15µs, t
Circuit Commutated Turn–Off Time (Note 1), t
Operating Temperature Range, T
Storage Temperature Range, T
J
stg
q
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
L
≤ 0.1µs), t
r
gt
2.5µs. . .
35µs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+230°C. . . . . . . . . . . . . . . . .
Note 1. iT = 2A, Pulse Duration = 50µs, dv/dt = 20V/µs, di/dt = –30A/µs, IGT = 200mA at Turn–On
.600 (15.24)
A
.156
(3.96)
Dia.
KAG
.060 (1.52)
.173 (4.4)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.055 (1.4) .015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates
that case may have square
corners.
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