NTE NTE5404, NTE5403, NTE5401, NTE5400, NTE5406 Datasheet

NTE5400 thru NTE5406

Silicon Controlled Rectifier (SCR)

0.8 Amp Sensitive Gate

Description:

The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional
gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
rated voltages up to 600 volts.

These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca­pabilities.

Available in a TO–92 plastic package, these devices feature excellent environmental stress and tem­perature cycling characteristics and, coupled with their small size and electrical performance, lend
themselves to various types of control functions encountered with sensors, motors, lamps, relays,
counters, triggers, etc.

Absolute Maximum Ratings:

Repetitive Peak Reverse Voltage (TC = +100°C), V

NTE5400 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5401 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5402 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5403 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5404 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5405 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5406 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Repetitive Peak Off–State Voltage (TC = +100°C), V

NTE5400 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5401 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5402 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5403 150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5404 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5405 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5406 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS On–State Current, I

T(RMS)

Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3µs Max), I
Peak Gate–Power Dissipation (IGT ≤ I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T

opr

stg

GTM

G(AV)

GTM

for 3µs Max), P

Typical Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R

RRM

DRXM

thJC

thJA

GM

TSM

0.8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20W. . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Off–State Current

I

I

DRXM

Maximum On–State Voltage V
DC Holding Current I

HOLD

DC Gate–Trigger Current I
DC Gate–Trigger Voltage V

RRM

TM

GT

GT

V

= Max, V

RRM

TC = +100°C, R

DRXM

G–K

= Max,

= 1kΩ

TC = +25°C, IT = 1.2A (Peak) – – 1.7 V
TC = +25°C – – 5 mA
VD = 6VDC, RL = 100Ω, TC = +25°C – 50 200 µA
VD = 6VDC, RL = 100Ω, TC = +25°C – – 0.8 V

– – 50 µA
– – 50 µA

I2t for Fusing Reference I2t > 1.5msoc – – 0.15 A2sec
Critical Rate of Applied

Forward Voltage

dv/dt

(critical)

.210

(5.33)

Max

TC = +100°C – 5 – V/µs

.135 (3.45) Min

Seating
Plane

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

KG A

.050 (1.27)

.165 (4.2) Max

.105 (2.67) Max