NTE NTE5374 Datasheet

NTE5374 & NTE5375

Silicon Controlled Rectifier (SCR)

for High Speed Switching

Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified)

Repetitive Peak Voltages, V

NTE5374 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5375 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak Off–State Voltage, V

NTE5374 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5375 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak Reverse Blocking Voltage, V

NTE5374 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE5375 1300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Average On–State Current (TC = +85°C, Single phase, 50Hz, 180° sinewave), I
RMS On–State Current, I

T(RMS)

Continuous On–State Current, I
Peak One–Cycle Surge (Non–Repetitive) On–State Current, I

(t = 10ms, half sinewave, TJ(initial) = +125°C, VRM = 0.6V

(t = 10ms, half sinewave, TJ(initial) = +125°C, VRM ≤ 10V) 3850A. . . . . . . . . . . . . . . . . . . . . . .

Maximum Permissible Surge Energy (TJ(initial) = +125°C), I2t

(t = 10ms, VRM = 0.6V

(t = 10ms, VRM ≤ 10V) 74.1 x 103A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(t = 3ms, VRM ≤ 10V) 54.5 x 103A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Forward Gate Current (Anode Positive with Respect to Cathode), I
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power, P

G(AV)

GM

Rate of Rise of Off–State Voltage (To 80% V
Rate of Rise of On–State Current (Repetitive, Gate Drive 20V, 20Ω with tr ≤ 1µs), di/dt 500A/µs. .
Peak On–State Voltage (ITM = 600A), V
Forward Conduction Threshold Voltage, V

Forward Conduction Slope Resistance, r 0.937mΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Repetitive Peak Off–State Current (At Rated V
Repetitive Peak Reverse Current (At Rated V
Maximum Gate Current Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), I
Maximum Gate Voltage Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), V

, V

DRM

RRM

RRM

DSM

RSM

T

TSM

max) 3500A. . . . . . . . . . . . . . .

RRM

max) 61.3 x 103A2sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RGM

, Gate Open–Circuit), dv/dt 200V/µs. . . . . . . . . . .

DRM

TM

O

), I

DRM

RRM

), I

DRM

RRM

FGM

FGM

T(AV)

GT

GT

183A. . . . . . .

355A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

355A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.96V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. .

18A. . . . . . . . . . . . . .

12V. . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . .

Maximum Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Maximum Holding Current (TJ = +25°C, VA = 6V, IA = 1A), I

Maximum Gate Voltage Which Will Not Trigger Any Device, V

H

GD

Typical Stored Charge (ITM = 300A, dir/dt 20A/µs, VRM = 50V, 50% Chord Value), Q
Maximum Circuit Commutated Turn–Off Time, t

(ITM = 300A, dir/dt = 20A/µs, dv/dt = 200V/µs to 80% V
Typical Circuit Commutated Turn–Off Time, t

(ITM = 300A, dir/dt = 20A/µs, dv/dt = 20V/µs to 80% V
Operating Temperature Range, T
Storage Temperature Range, T

HS

stg

Thermal Resistance, Junction–to–Case, R

q

thJC

q

) 30 – 40µs. . . . . . . . . . . . . . . . . .

DRM

) 25 – 35µs. . . . . . . . . . . . . . . . . . .

DRM

1.443 (36.68) Max
(Across Corners)

1.031 (26.18) Dia
(Ceramic)

rr

–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . .

0.25V. . . . . . . . . . . . . . . . . . . . . . .

50µC. . . . . .

0.04/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

For No. 6 Screw

Cathode

Cathode

(Red)

1.212 (30.8) Dia Max

.156 (3.96) Max

.643 (16.35)

For No. 6 Screw

.350 (8.89)

Dia Max

Gate

(White)

8.100

(205.74)

Max

(Terminals

1, 2, & 3)

3.625

(92.07)

Max

1.077 (27.35) Max

.630 (16.0)

3/4–16 UNF–2A
(Terminal 4)

Anode