NTE NTE5351 Datasheet

NTE5351

Silicon Controlled Rectifier (SCR)

for High Speed Switching

Features:

D Fast Turn–Off Time D High di/dt and dv/dt Capabilities D Shorted–Emitter Gate–Cathode Construction D Center Gate Construction

Non–Repetitive Peak Reverse Voltage (Gate Open, Note 1), V Non–Repetitive Peak Off–State Voltage (Gate Open, Note 1), V Repetitive Peak Reverse Voltage (Gate Open, Note 1), V Repetitive Peak Off–State Voltage (Gate Open, Note 1), V RMS On–State Current (TC = +60°C, 180° conduction angle), I Average On–State Current (TC = +60°C, 180° conduction angle), I Peak Surge (Non–Repetitive) On–State Current, I

TSM

(TC = +60°C, for one full cycle at applied voltage)

60Hz (Sinusoidal) 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50Hz (Sinusoidal) 65A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Rate of Change of On–State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt 200A/µs. . . . .

Fusing Current (TJ = –40° to +100°C, t = 1 to 8.3ms), I2t 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Forward Gate Power Dissipation (10µs Max, Note 2), P Peak Reverse Gate Power Dissipation (10µs Max, Note 2), P Average Gate Power Dissipation (10µs Max, Note 2), P Operating Case Temperature Range, T Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R Thermal Resistance, Junction–to–Ambient, R

thJC

thJA

G(AV)

Lead Temperature (During Soldering, 1/32” from seating plane, 10sec max), T

RROM

DROM

RSOM

DSOM

T(RMS)

RGM

T(AV)

–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+225°C. . . . . . . . .

700V. . . . . . . . . . . . . . . . . . . . .

700V. . . . . . . . . . . . . . . . . . . .

600V. . . . . . . . . . . . . . . . . . . . . . . . . .

600V. . . . . . . . . . . . . . . . . . . . . . . . .

5.0A. . . . . . . . . . . . . . . . . . . .

3.2A. . . . . . . . . . . . . . . . . .

3W. . . . . . . . . . . . . . . . . . . . . . . . .

3W. . . . . . . . . . . . . . . . . . . . . . . .

0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased. Note 2. An y pr oduct of g ate c urrent a nd g ate v oltage w hich results in a g ate p ower l ess than the m aximum

is permitted .

Electrical Characteristics: (At “Maximum Ratings” and TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Peak Off–State Forward Current I Peak Off–State Reverse Current I Instantaneous On–State Voltage v Instantaneous Holding Current i Critical Rate of Rise of Off–State

Current DC Gate Trigger Current I DC Gate Trigger Voltage V Gate Controlled Turn–On Time t

Circuit Commutated Turn–Off

Time

dv/dt VD = 600V, exponential voltage rise,

.062 (1.57)

DOM ROM

GT gt

VD = 600V, TC = +100°C, Gate Open – 0.5 3.0 mA VD = 600V, TC = +100°C, Gate Open – 0.3 1.5 mA iT = 30A Peak – 2.2 3.0 V Gate Open – 20 50 mA

100 250 – V/µs

TC = +80°C, Gate Open VD = 12V, RL = 30Ω – 15 40 mA VD = 12V, RL = 30Ω – 1.8 3.5 V VDX = 600V, IGT = 300mA, tr = 0.1µs,

IT = 2A peak VCX = 600V, iT = 2A, pulse durat ion = 50µs,

dv/dt = 100V/µs, –di/dt = –10A/µs, IGT = 100mA, VGT = 0V (at turn–off), TC = +80°C

.485 (12.3)

– 0.7 – µs

– 4 6 µs

.295 (7.5)

Dia

.147 (3.75) Dia (2 Places)

.145 (3.7) R Max

.031 (0.78) Dia

.960 (24.3) Gate

.580 (14.7)

.360

(9.14)

Min

.200

(5.08)

CathodeAnode/Case