NTE NTE2505 Datasheet
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D High Current Capacity
D High DC Current Gain
D Low Collector Emitter Saturation Voltage
D High Emitter Base Breakdown Voltage
NTE2505
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Collector Power Dissipation, P
B
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
stg
(TA = +25°C unless otherwise specified)
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
FE
VCB = 20V, IE = 0 – – 100 nA
VEB = 10V, IC = 0 – – 100 nA
VCE = 5V, IC = 500mA 800 1500 3200
VCE = 5V, IC = 1A 600 – –
Gain–Bandwidth Product f
Output Capacitance C
Collector Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
T
ob
VCE = 10V, IC = 50mA – 260 – MHz
VCB = 10V, f = 1MHz – 27 – pF
= 1A, I
= 1A, IB = 20mA – 0.85 1.2 V
= 20mA – 0.15 0.5 V
B
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
µ
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Turn–On Time t
Storage Time t
Fall Time t
.271 (6.9) .098
on
stg
= 10µA, IE = 0 30 – – V
= 1mA, RBE = ∞ 25 – – V
= 10µA, IC = 0 15 – – V
VCC = 10V, VBE = –5V,
100IB1 = –100IB2 = IC = 700mA,
Pulse Width = 20
Pulse Width = 20µs,
Duty Cycle ≤ 1%
f
s,
(2.5)
– 0.14 – µs
– 1.35 – µs
– 0.1 – µs
.137
(3.5)
BCE
.039 (1.0)
.039 (1.0)
.122
(3.1)
.098 (2.5)
.177
(4.5)
.161
(4.1)
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