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NTE2515 (NPN) & NTE2516 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector Emitter Saturation Voltage
D High Gain–Bandwidth Product
D Excellent Linearity of h
D Fast Switching Time
Applications:
D Display Drivers
D High Speed Inverters
D Converters
FE
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 100V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC = 500mA 140 – 240
VCE = 5V, IC = 3A 40 – –
Gain–Bandwidth Product
NTE2515
NTE2516 – 130 – MHz
f
T
VCE = 10V, IC = 500mA
– 180 – MHz
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2515
C
ob
VCB = 10V, f = 1MHz
– 40 – pF
NTE2516 – 65 – pF
Collector Emitter Saturation Voltage
NTE2515
V
CE(sat)
IC = 2A, IB = 200mA
– 150 400 mV
NTE2516 – 200 500 mV
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Turn–On Time t
Storage Time
NTE2515
NTE2516
Fall Time t
on
t
stg
f
= 2A, IB = 200mA – 0.9 1.2 V
= 10µA, IE = 0 120 – – V
= 1mA, RBE = ∞ 100 – – V
= 10µA, IC = 0 6 – – V
VCC = 25V, VBE = –5V,
– 100 – ns
10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
– 900 – ns
– 800 – ns
– 50 – ns
Note 1. For NTE2514, the polarity is reversed.
.315 (8.0)
C
E
.106 (2.7)
.433
(11.0)
B
.610
(15.5)
.094 (2.4)
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