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NTE2524 (NPN) & NTE2525 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Collector–Emitter Saturation Voltage
D High Current and High f
D Excellent Linearity of h
D Fast Switching Time
T
FE
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 40V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 2V, IC = 500mA 100 – 400
VCE = 2V, IC = 6A 35 – –
Gain–Bandwidth Product
NTE2524
NTE2525 – 130 – MHz
Output Capacitance
NTE2524
NTE2525 – 95 – pF
f
T
C
ob
VCE = 5V, IC = 1A – 180 – MHz
VCB = 10V, f = 1MHz – 65 – pF
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage
NTE2524
V
CE(sat)
IC = 4A, IB = 200mA – 200 400 mV
NTE2525 – 250 500 mV
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Turn–On Time t
Storage Time
NTE2524
NTE2525
Fall Time t
on
t
stg
f
= 4A, IB = 200mA – 0.95 1.2 V
= 10µA, IE = 0 60 – – V
= 1mA, RBE = ∞ 50 – – V
= 10µA, IC = 0 6 – – V
VCC = 25V, VBE = –5V,
– 50 – ns
10IB1 = –10IB2 = IC = 4A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
Duty Cycle ≤ 1%, Note 1
– 500 – ns
– 450 – ns
20 ns
Note 1. For NTE2525, the polarity is reversed.
.256 (6.5) .090 (2.3)
.059 (1.5)
.197 (5.0)
BCE
.002 (0.5)
.275
(7.0)
.295
(7.5)
.002(0.5)
.090 (2.3)
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