Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage 22 V
DC
or±11 V
DC
Power Dissipation (Note 2)
J Package 1W
N Package 750 mW
Maximum T
J
J Package +150˚C
N Package +125˚C
Thermal Resistance
J Package
θ
jA
147˚C/W still air
110˚C/W with 400 linear feet/min air flow
N Package
θ
jA
100˚C/W still air
75˚C/W with 400 linear feet/min air flow
Input Currents, I
IN
(+) or IIN(−) 10 mA
DC
Set Currents, I
SET(IN)
or I
SET(OUT)
2mA
DC
Operating Temperature Range
LM359 0˚C to +70˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.) 260˚C
Soldering Information
Dual-In-Line Package
Soldering (10 sec.) 260˚C
Small Outline Package
Vapor Phase (60 sec.) 215˚C
Infrared (15 sec.) 220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD rating to be determined.
Electrical Characteristics
I
SET(IN)
=
I
SET(OUT)
=
0.5 mA, V
supply
=
12V, T
A
=
25˚C unless otherwise noted
Parameter Conditions LM359 Units
Min Typ Max
Open Loop Voltage V
supply
=
12V, R
L
=
1k, f=100 Hz 62 72 dB
Gain T
A
=
125˚C 68 dB
Bandwidth R
IN
=
1kΩ,C
comp
=
10 pF 15 30 MHz
Unity Gain
Gain Bandwidth Product R
IN
=
50Ω to 200Ω 200 400 MHz
Gain of 10 to 100
Slew Rate
Unity Gain R
IN
=
1kΩ,C
comp
=
10 pF 30 V/µs
Gain of 10 to 100 R
IN
<
200Ω 60 V/µs
Amplifier to Amplifier f=100 Hz to 100 kHz, R
L
=
1k −80 dB
Coupling
Mirror Gain at 2 mA I
IN
(+), I
SET
=
5 µA, T
A
=
25˚C 0.9 1.0 1.1 µA/µA
(Note 3) at 0.2 mA I
IN
(+), I
SET
=
5 µA 0.9 1.0 1.1 µA/µA
Over Temp.
at 20 µA I
IN
(+), I
SET
=
5 µA 0.9 1.0 1.1 µA/µA
Over Temp.
∆Mirror Gain at 20 µA to 0.2 mA I
IN
(+) 3 5
%
(Note 3) Over Temp, I
SET
=
5µA
Input Bias Current Inverting Input, T
A
=
25˚C 8 15 µA
Over Temp. 30 µA
Input Resistance (βre) Inverting Input 2.5 kΩ
Output Resistance I
OUT
=
15 mA rms, f=1 MHz 3.5 Ω
Output Voltage Swing R
L
=
600Ω
V
OUT
High IIN(−) and IIN(+) Grounded 9.5 10.3 V
V
OUT
Low IIN(−)=100 µA, IIN(+)=0 2 50 mV
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