NSC LM313H Datasheet
LM113/LM313 Reference Diode
LM113/LM313 Reference Diode
December 1994
General Description
The LM113/LM313 are temperature compensated, low voltage reference diodes. They feature extremely-tight regulation over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability.
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit. As such, they have the
same low noise and long term stability as modern IC op
amps. Further, output voltage of the reference depends only
on highly-predictable properties of components in the IC; so
they can be manufactured and supplied to tight tolerances.
Features
Y
Low breakdown voltage: 1.220V
Schematic and Connection Diagrams
Y
Dynamic impedance of 0.3X from 500 mAto20mA
Y
Temperature stability typically 1% overb55§Cto125§C
range (LM113), 0
Y
Tight tolerance:g5%,g2% org1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of siliconÐthe energy-band gap voltageÐmakes it useful for many temperature-compensation and temperature-measurement functions.
Cto70§C (LM313)
§
Metal Can Package
Order Number
LM113H, LM113H/883,
LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883,
See NS Package Number H02A
or LM313H
TL/H/5713– 1
Typical Applications
Low Voltage Regulator
Level Detector for Photodiode
²
Solid tantalum.
TL/H/5713– 2
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/5713
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 3)
Power Dissipation (Note 1) 100 mW
Reverse Current 50 mA
Forward Current 50 mA
Storage Temperature Range
Lead Temperature
(Soldering, 10 seconds) 300
Operating Temperature Range
LM113
LM313 0
b
65§Ctoa150§C
b
55§Ctoa125§C
Ctoa70§C
§
Electrical Characteristics (Note 2)
Parameter Conditions Min Typ Max Units
Reverse Breakdown Voltage
LM113/LM313
LM113-1 1.210 1.22 1.232 V
e
I
1mA
R
LM113-2 1.195 1.22 1.245 V
Reverse Breakdown Voltage
Change
Reverse Dynamic Impedance
Forward Voltage Drop I
RMS Noise Voltage
0.5 mA
e
I
R
e
I
R
e
F
10 Hz
e
I
R
Reverse Breakdown Voltage 0.5 mAsI
Change with Current T
MIN
Breakdown Voltage Temperature 1.0 mAsI
Coefficient T
Note 1: For operating at elevated temperatures, the device must be derated based on a 150§C maximum junction and a thermal resistance of 80
case or 440
Note 2: These specifications apply for T
inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at
least a 100X resistor, as it may oscillate at some currents.
Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
C/W junction to ambient.
§
e
25§C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4
A
MIN
s
s
I
20 mA 6.0 15 mV
R
1 mA 0.2 1.0 X
10 mA 0.25 0.8 X
1.0 mA 0.67 1.0 V
sfs
10 kHz
1mA
s
10 mA
R
s
s
T
T
A
MAX
s
10 mA
R
s
s
T
T
A
MAX
1.160 1.220 1.280 V
5 mV
15 mV
0.01 %/
C/W junction to
§
C
§
C
§
Typical Performance Characteristics
Temperature Drift Reverse Dynamic Impedance Reverse Characteristics
TL/H/5713– 3
2
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