NSC LM3046MX, LM3046M Datasheet
LM3046
Transistor Array
General Description
The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
DC through VHF range. They maybe used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3046
is supplied in a 14-lead molded dual-in-line package.
Features
n Two matched pairs of transistors
V
BE
matched±5mV
Input offset current 2 µA max at I
C
=
1mA
n Five general purpose monolithic transistors
n Operation from DC to 120 MHz
n Wide operating current range
n Low noise figure: 3.2 dB typ at 1 kHz
Applications
n General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
n Custom designed differential amplifiers
n Temperature compensated amplifiers
Schematic and Connection Diagram
Small Outline Package
DS007950-1
Top View
Order Number LM3046M
See NS Package Number M14A
July 1999
LM3046 Transistor Array
© 1999 National Semiconductor Corporation DS007950 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. (T
A
=
25˚C)
LM3046
Each Total Units
Transistor Package
Power Dissipation:
T
A
=
25˚C 300 750 mW
T
A
=
25˚C to 55˚C 300 750 mW
T
A
>
55˚C Derate at 6.67 mW/˚C
T
A
=
25˚C to 75˚C mW
T
A
>
75˚C mW/˚C
Collector to Emitter Voltage, V
CEO
15 V
Collector to Base Voltage, V
CBO
20 V
Collector to Substrate Voltage, V
CIO
(Note 2) 20 V
Emitter to Base Voltage, V
EBO
5V
Collector Current, I
C
50 mA
Operating Temperature Range −40˚C to +85˚C
Storage Temperature Range −65˚C to +85˚C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) 260˚C
Small Outline Package
Vapor Phase (60 Seconds) 215˚C
Infrared (15 Seconds) 220˚C
SeeAN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.
Electrical Characteristics
(T
A
=
25˚C unless otherwise specified)
Parameter Conditions
Limits
Units
Min Typ Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)I
C
=
10 µA, I
E
=
02060V
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)I
C
=
1 mA, I
B
=
01524V
Collector to Substrate Breakdown I
C
=
10 µA, I
CI
=
02060V
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)I
E
10 µA, I
C
=
057V
Collector Cutoff Current (I
CBO
)V
CB
=
10V, I
E
=
0 0.002 40 nA
Collector Cutoff Current (I
CEO
)V
CE
=
10V, I
B
=
0 0.5 µA
Static Forward Current Transfer V
CE
=
3V I
C
=
10 mA 100
Ratio (Static Beta) (h
FE
)I
C
=
1 mA 40 100
I
C
=
10 µA 54
Input Offset Current for Matched V
CE
=
3V, I
C
=
1 mA 0.3 2 µA
Pair Q
1
and Q2|IO1−I
IO2
|
Base to Emitter Voltage (V
BE
)V
CE
=
3V I
E
=
1 mA 0.715 V
I
E
=
10 mA 0.800
Magnitude of Input Offset Voltage for V
CE
=
3V, I
C
=
1 mA 0.45 5 mV
Differential Pair |V
BE1−VBE2
|
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3−VBE4
|, |V
BE4−VBE5
|,
|V
BE5−VBE3
|
V
CE
=
3V, I
C
=
1 mA 0.45 5 mV
Temperature Coefficient of Base to
Emitter Voltage
V
CE
=
3V, I
C
=
1 mA −1.9 mV/˚C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)I
B
=
1 mA, I
C
=
10 mA 0.23 V
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