NSC LM3046M, LM3045J, LM3046N Datasheet
LM3045/LM3046/LM3086 Transistor Arrays
LM3045/LM3046/LM3086 Transistor Arrays
December 1994
General Description
The LM3045, LM3046 and LM3086 each consist of five
general purpose silicon NPN transistors on a common
monolithic substrate. Two of the transistors are internally
connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low
power system in the DC through VHF range. They may be
used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal
matching. The LM3045 is supplied in a 14-lead cavity dualin-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically
identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.
Schematic and Connection Diagram
Dual-In-Line and Small Outline Packages
Features
Y
Two matched pairs of transistors
V
matchedg5mV
BE
Input offset current 2 mA max at I
Y
Five general purpose monolithic transistors
Y
Operation from DC to 120 MHz
Y
Wide operating current range
Y
Low noise figure 3.2 dB typ at 1 kHz
Y
Full military
temperature range (LM3045)
e
1mA
C
b
55§Ctoa125§C
Applications
Y
General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
Y
Custom designed differential amplifiers
Y
Temperature compensated amplifiers
Top View
TL/H/7950– 1
Order Number LM3045J, LM3046M, LM3046N or LM3086N
See NS Package Number J14A, M14A or N14A
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/7950
Absolute Maximum Ratings (T
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Dissipation:
e
T
25§C 300 750 300 750 mW
A
e
T
25§Cto55§C 300 750 mW
A
l
T
55§C Derate at 6.67 mW/§C
A
e
T
25§Cto75§C 300 750 mW
A
l
T
75§C Derate at 8 mW/§C
A
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Collector to Substrate Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Operating Temperature Range
Storage Temperature Range
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) 260
Small Outline Package
Vapor Phase (60 Seconds) 215
Infrared (15 Seconds) 220
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices.
C
EBO
CEO
CBO
(Note 1) 20 20 V
CIO
Electrical Characteristics (T
Parameter Conditions LM3045, LM3046 LM3086 Units
Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown I
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer V
Ratio (Static Beta) (hFE)
Input Offset Current for Matched V
Pair Q
and Q
1
Base to Emitter Voltage (VBE)V
Magnitude of Input Offset Voltage for V
Differential Pair
Magnitude of Input Offset Voltage for Isolated V
Transistors
b
V
l
BE5
Temperature Coefficient of Base to V
Emitter Voltage
Collector to Emitter Saturation Voltage (V
Temperature Coefficient of V
Input Offset Voltage
Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
(BR)CIO
l
V
BE3
)
)V
CBO
)V
CEO
b
I
I
l
2
V
l
V
BE3
l
O1
IO2
b
V
BE1
b
l
BE2
V
V
l,l
BE4
BE4
l
DV
BE
DT
#
J
DV
10
DT
#
J
(BR)CBO
(BR)CEO)IC
(BR)EBO
b
V
, 0.45 5 mV
l
BE5
CE(SAT)
e
25§C)
A
LM3045 LM3046/LM3086
Each Total Each Total Units
Transistor Package Transistor Package
15 15 V
20 20 V
55V
50 50 mA
b
55§Ctoa125§C
b
65§Ctoa150§C
C 260§C
§
e
25§C unless otherwise specified)
A
e
)I
C
e
e
C
)I
10 mA, I
E
CB
CE
CE
CE
CE
CE
CE
CE
e
)I
B
CE
10 mA, I
1 mA, I
10 mA, I
e
e
e
e
e
e
e
e
1 mA, I
e
e
E
e
0 1524 1524 V
B
e
CI
e
05757V
C
e
10V, I
E
e
10V, I
B
3V
3V, I
3V
3V, I
3V, I
3V, I
3V, I
e
I
C
e
I
C
e
I
C
e
1mA
C
e
I
E
Ð
e
I
E
e
1mA
C
e
1mA
C
e
1mA
C
e
10 mA 0.23 0.23 V
C
e
1mA
C
2
Min Typ Max Min Typ Max
0 2060 2060 V
0
0 0.002 40 0.002 100 nA
0 0.5 5 mA
1mA
10 mA
20 60 20 60 V
10 mA
1 mA 40 100 40 100
10 mAÐ
b
40§Ctoa85§C
b
65§Ctoa85§C
C
§
C
§
Limits Limits
100 100
54 54
0.3 2 mA
0.715 0.715
0.800 0.800
0.45 5 mV
b
1.9
1.1 mV/§C
b
1.9 mV/
V
C
§
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