Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the NationalSemiconductorSales Office/
Distributors for availability and specifications.
VCC 7.5V
CBOOT 42V
CBOOT to SW 8V
SW to PGND 36V
Junction Temperature +150˚C
Power Dissipation
(Note 2) 720mW
Storage Temperature −65˚ to 150˚C
ESD Susceptibility
Human Body Model (Note 3) 1 kV
Soldering Time, Temperature 10sec., 300˚C
Operating Ratings (Note 1)
VCC 4V to 7V
Junction Temperature Range 0˚ to 125˚C
Electrical Characteristics
LM2725
VCC = CBOOT = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for T
A
=TJ= +25˚C. Limits appearing in boldface type apply over the entire operating temperature range.
Symbol Parameter Condition Min Typ Max Units
POWER SUPPLY
I
q_op
Operating Quiescent
Current
PWM_IN = 0V
180 250
µA
I
q_sd
Shutdown Quiescent
Current
EN = 0V, PWM_IN = 0V
0.5 15 µA
TOP DRIVER
Peak Pull-Up Current Test Circuit 1, V
bias
= 5V,
R = 0.1Ω
1.2 A
Pull-Up Rds_on I
CBOOT=IHG
= 0.7A 2.4 Ω
Peak Pull-down Current Test Circuit 2, V
bias
= 5V,
R = 0.1Ω
−1.0 A
Pull-down Rds_on I
SW=IHG
= 0.7A 1.4 Ω
t
4
Rise Time Timing Diagram, C
LOAD
=
3.3nF
17 ns
t
6
Fall Time 10 ns
t
3
Pull-Up Dead Time Timing Diagram 23 ns
t
5
Pull-Down Delay Timing Diagram, from
PWM_IN Falling Edge
21 ns
BOTTOM DRIVER
Peak Pull-Up Current Test Circuit 3, V
bias
= 5V,
R = 0.1Ω
1.2 A
Pull-up Rds_on I
VCC=ILG
= 0.7A 2.6 Ω
Peak Pull-down Current Test Circuit 4, V
bias
= 5V,
R = 0.1Ω
−2 A
Pull-down Rds_on I
GND=ILG
= 0.7A 0.65 Ω
t
8
Rise Time Timing Diagram, C
LOAD
=
3.3nF
18 ns
t
2
Fall Time 6 ns
t
7
Pull-up Dead Time Timing Diagram 28 ns
t
1
Pull-down Delay Timing Diagram, from
PWM_IN Rising Edge
15 ns
LOGIC
V
uvlo_up
Power On Threshold VCC rises from 0V toward
5V
3.0 V
V
uvlo_dn
Under-Voltage-Lock-Out
Threshold
2.5 V
V
uvlo_hys
Under-Voltage-Lock-Out
Hysteresis
0.5 V
LM2725/LM2726
www.national.com3