NSC LM136-5.0MW8 Datasheet

LM136-5.0/LM236-5.0/LM336-5.0
5.0V Reference Diode
General Description
The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient
5.0V zener with 0.6dynamic impedance. A third terminal on the LM136-5.0 allows the reference voltage and tempera­ture coefficient to be trimmed easily.
The LM136-5.0 is rated for operation over −55˚C to +125˚C while the LM236-5.0 is rated over a −25˚C to +85˚C tem­perature range. The LM336-5.0 is rated for operation over a
0˚C to +70˚C temperature range. See the connection dia­grams for available packages. For applications requiring
2.5V see LM136-2.5.
Features
n Adjustable 4V to 6V n Low temperature coefficient n Wide operating current of 600 µA to 10 mA n 0.6dynamic impedance
n
±
1%initial tolerance available
n Guaranteed temperature stability n Easily trimmed for minimum temperature drift n Fast turn-on n Three lead transistor package
Connection Diagrams
TO-92
Plastic Package
DS005716-4
Bottom View
Order Number LM236AZ-5.0, LM336Z-5.0 or LM336BZ-5.0
See NS Package Number Z03A
TO-46
Metal Can Package
DS005716-5
Bottom View
Order Number LM136H-5.0,
LM136H-5.0/883, LM236H-5.0,
LM136AH-5.0, LM136AH-5.0/883,
or LM236AH-5.0
See NS Package Number H03H
June 1999
LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode
© 1999 National Semiconductor Corporation DS005716 www.national.com
Connection Diagrams (Continued)
Typical Applications
SO Package
DS005716-7
Order Number LM336M-5.0 or LM336BM-5.0
See NS Package Number M08A
5.0V Reference
DS005716-1
5.0V Reference with Minimum Temperature Coefficient
DS005716-15
Adjust to 5.00V
* Any silicon signal diode
Trimmed 4V to 6V Reference with Temperature Coefficient
Independent of Breakdown Voltage
DS005716-3
* Does not affect temperature coefficient
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Reverse Current 15mA Forward Current 10mA Storage Temperature −60˚C to +150˚C
Operating Temperature Range (Note 2)
LM136-5.0 −55˚C to +150˚C LM236-5.0 −25˚C to +85˚C
LM336-5.0 0˚C to +70˚C
Soldering Information
TO-92 Package (10 sec.) 260˚C TO-46 Package (10 sec.) 300˚C SO Package
Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C
See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” (appendix D) for other methods of solder­ing surface mount devices.
Electrical Characteristics
(Note 3)
LM136A-5.0/LM236A-5.0 LM336B-5.0
Parameter Conditions LM136-5.0/LM236-5.0 LM336-5.0 Units
Min Typ Max Min Typ Max
Reverse Breakdown Voltage T
A
=
25˚C, I
R
=
1mA LM136-5.0/LM236-5.0/LM336-5.0 4.9 5.00 5.1 4.8 5.00 5.2 V LM136A-5.0/LM236A-5.0, LM336B-5.0 4.95 5.00 5.05 4.90 5.00 5.1 V
Reverse Breakdown Change T
A
=
25˚C, 6 12 6 20 mV
With Current 600 µAI
R
10 mA
Reverse Dynamic Impedance T
A
=
25˚C, I
R
=
1 mA, f=100 Hz 0.6 1.2 0.6 2
Temperature Stability V
R
Adjusted 5.00V
(Note 4) I
R
=
1 mA, (
Figure 2
)
0˚CT
A
70˚C (LM336-5.0) 4 12 mV
−25˚CT
A
+85˚C (LM236-5.0) 7 18 mV
−55˚CT
A
+125˚C (LM136-5.0) 20 36 mV
Reverse Breakdown Change 600 µAI
R
10 mA 6 17 6 24 mV With Current Adjustment Range Circuit of
Figure 1
±
1
±
1V
Reverse Dynamic Impedance I
R
=
1 mA 0.8 1.6 0.8 2.5
Long Term Stability T
A
=
25˚C
±
0.1˚C, I
R
=
1 mA, t=1000 hrs 20 20 ppm
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating thedevice beyond its specified operating conditions.
Note 2: For elevated temperature operation, T
j
max is: LM136 150˚C LM236 125˚C LM336 100˚C
Thermal Resistance TO-92 TO-46 SO-8
θ
ja
(Junction to Ambient) 180˚C/W (0.4" Leads) 440˚C/W 165˚C/W
170˚C/W (0.125" Leads)
θ
ja
(Junction to Case) N/A 80˚C/W N/A
Note 3: Unless otherwise specified, the LM136-5.0 is specified from −55˚CTA≤+125˚C, the LM236-5.0 from −25˚CTA≤+85˚C and the LM336-5.0 from 0˚CT
A
+70˚C.
Note 4: Temperaturestabilityfor the LM336 and LM236 family is guaranteed by design. Design limits are guaranteed (but not 100%percent production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum charge in V
REF
from 25˚C to TA(min) or TA(max).
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Typical Performance Characteristics
Application Hints
The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further,either the breakdown voltage or the tempera­ture coefficient can be adjusted to optimize circuit perfor­mance.
Figure 1
shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affect­ing the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry.
If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in
Figure 2
. When the device is adjusted to 5.00V the temperature coefficient is minimized. Almost any silicon sig­nal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0. It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The abso­lute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical.
Reverse Voltage Change
DS005716-17
Zener Noise Voltage
DS005716-18
Dynamic Impedance
DS005716-19
Response Time
DS005716-20
Reverse Characteristics
DS005716-21
Temperature Drift
DS005716-22
Forward Characteristics
DS005716-23
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