NSC DS16179J-883 Datasheet

TL/F/7553

DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers

February 1986

DS16149/DS36149, DS16179/DS36179 Hex MOS Drivers

General Description

The DS16149/DS36149 and DS16179/DS36179 are Hex
MOS drivers with outputs designed to drive large capacitive
loads up to 500 pF associated with MOS memory systems.
PNP input transistors are employed to reduce input currents
allowing the large fan-out to these drivers needed in memo­ry systems. The circuit has Schottky-clamped transistor log­ic for minimum propagation delay, and a disable control that
places the outputs in the logic ‘‘1’’ state (see truth table).
This is especially useful in MOS RAM applications where a
set of address lines has to be in the logic ‘’1’’ state during
refresh.

The DS16149/DS36149 has a 15 X resistor in series with
the outputs to dampen transients caused by the fast-switch­ing output. The DS16179/DS36179 has a direct low imped­ance output for use with or without an external resistor.

Features

Y

High speed capabilities

#

Typ 9 ns driving 50 pF

#

Typ 29 ns driving 500 pF

Y

Built-in 15 X damping resistor (DS16149/DS36149)

Y

Same pin-out as DM8096 and DM74366

Schematic Diagram

TL/F/7553– 1

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage 7.0V

Logical ‘‘1’’ Input Voltage 7.0V

Logical ‘‘0’’ Input Voltage

b

1.5V

Storage Temperature Range

b

65§Ctoa150§C

Maximum Power Dissipation* at 25§C

Cavity Package 1371 mW
Molded Package 1280 mW

Lead Temperature (Soldering 10 seconds) 300

§

C

*Derate cavity package 9.1 mW/§C above 25§C; derate molded package

10.2 m/W

§

C above 25§C.

Operating Conditions

Min Max Units

Supply Voltage (V

CC

) 4.5 5.5 V

Temperature (T

A

)

DS16149, DS16179

b

55

a

125

§

C

DS36149, DS36179 0

a

70

§

C

DC Electrical Characteristics (Notes 2 and 3)

Symbol Parameter Conditions Min Typ Max Units

VIN(1) Logical ‘‘1’’ Input Voltage 2.0 V

VIN(0) Logical ‘‘0’’ Input Voltage 0.8 V

IIN(1) Logical ‘‘1’’ Input Current V

CC

e

5.5V, V

IN

e

5.5V 0.1 40 mA

IIN(0) Logical ‘‘0’’ Input Current V

CC

e

5.5V, V

IN

e

0.5V

b

50b250 mA

V

CLAMP

Input Clamp Voltage V

CC

e

4.5V, I

IN

eb

18 mA

b

0.75b1.2 V

V

OH

Logical ‘‘1’’ Output Voltage

V

CC

e

4.5V, I

OH

eb

10 mA

DS16149/DS16179 3.4 4.3 V

(No Load)

DS36149/DS36179 3.5 4.3 V

V

OL

Logical ‘‘0’’ Output Voltage

V

CC

e

4.5V, I

OL

e

10 mA

DS16149/DS16179 0.25 0.4 V

(No Load)

DS36149/DS36179 0.25 0.35 V

V

OH

Logical ‘‘1’’ Output Voltage DS16149 2.4 3.5 V
(With Load)

V

CC

e

4.5V, I

OH

eb

1.0 mA

DS16179 2.5 3.5 V

DS36149 2.6 3.5 V

DS36179 2.7 3.5 V

V

OL

Logical ‘‘0’’ Output Voltage DS16149 0.6 1.1 V
(With Load)

V

CC

e

4.5V, I

OL

e

20 mA

DS16179 0.4 0.5 V

DS36149 0.6 1.0 V

DS36179 0.4 0.5 V

I

ID

Logical ‘‘1’’ Drive Current V

CC

e

4.5V, V

OUT

e

0V, (Note 4)

b

250 mA

I

OD

Logical ‘‘0’’ Drive Current V

CC

e

4.5V, V

OUT

e

4.5V, (Note 4) 150 mA

I

CC

Power Supply Current Disable Inputse0V

33 60 mA

V

CC

e

5.5V

All Other Inputs

e

3V

All Inputse0V 14 20 mA

Switching Characteristics (V

CC

e

5V, T

A

e

25§C) (Note 4)

Symbol Parameter Conditions Min Typ Max Units

t

S

g

Storage Delay Negative Edge

(

Figure 1

)

C

L

e

50 pF 4.5 7 ns

C

L

e

500 pF 7.5 12 ns

t

S

’

Storage Delay Positive Edge

(

Figure 1

)

C

L

e

50 pF 5 8 ns

C

L

e

500 pF 8 13 ns

t

F

Fall Time

(

Figure 1

)

C

L

e

50 pF 5 8 ns

C

L

e

500 pF 22 35 ns

2