NSC CLC949AJQ, CLC949ACQ, CLC949PCASM Datasheet

SFDR (dBc)
SNR (dB), SFDR (dBc)
Power Dissipation vs. Conversion Rate
200
150
100
50
0
Power (mW)
0 5 10 15
20
Features
Very low/programmable power
0.07W @ 5MSPS
0.22W @ 20MSPS
0.40W @ 30MSPS
Single supply operation (+5V)
0.5 LSB differential linearity error
Wide dynamic range
72dBc spurious-free dynamic range 68dB signal-to-noise ratio
No missing codes
Applications
CCD imaging
IR imaging
FLIR processing
Medical imaging
High definition video
Instrumentation
Radar processing
Digital communications
General Description
The Comlinear CLC949 is a 12-bit analog-to-digital converter sub­system including 12-bit quantizer, sample-and-hold amplifier, and internal reference. The CLC949 has been optimized for low power operation with high dynamic range. The CLC949 has a unique feature which allows the user to adjust internal bias levels in the converter which results in a trade-off between power dissipation and maximum conversion rate. With bias set for 220mW power dissipation the converter operates at 20MSPS. Under these conditions, dynamic performance with a 9.9MHz analog input is typically 68dB SNR and 72dBc SFDR. When bias is set for only 65mW power dissipation the converter maintains excellent perfor­mance at 5MSPS. With a 2.4MHz analog input signal the SNR is 70dB and SFDR is 78dBc. This excellent dynamic performance in the frequency domain without high power requirements make the part a strong performer for communications and radar applications. The low input noise of the CLC949, its 0.5LSB differential linearity error specification, fast settling, and low power dissipation also lead to excellent performance in imaging systems. All parts are thoroughly tested to insure that guaranteed specifications are met.
The CLC949 incorporates an input sample-and-hold amplifier followed by a quantizer which uses a pipelined architecture to min­imize comparator count and the associated power dissipation penalty. An on-board voltage reference is provided. Analog input signals, conversion clock, and a single supply are all that are required for CLC949 operation.
The CLC949 exhibits very stable performance over the commercial and industrial temperature ranges. Most parameters shift very little as the ambient temperature changes from -40°C to 85°C. An exception to this rule is the dynamic performance of the converter. As the temperature is increased, the distortion increases, especially at higher input frequencies. This can be seen in the plot on page 3. For input frequencies below 7MHz, there is relatively little variation in distortion as the temperature is changed, but at higher input frequencies, it is apparent that the performance degrades as the temperature is increased.
Note that the reason for this degradation is the reduced ability of the CLC949 to handle high slew rates at high temperatures. In applications such as CCD imaging systems, where the slew rate at the A/D sampling instant is very low, this degradation will not be nearly so pronounced.
For applications requiring high temperature operation and very low distortion with high frequency input signals, use of an external sample-and-hold amplifier may enhance performance by reducing the slew rates that the CLC949 sees during its sampling period (just after the falling edge of CLK).
The CLC949 is fabricated in a 0.9µm CMOS technology. The CLC949ACQ is specified over the commercial temperature range of 0°C to +70°C and the CLC949AJQ is specified over the indus- trial range of -40°C to +85°C. Both are packaged in a 44-pin Plastic Leaded Chip Carrier (PLCC)
.
Comlinear CLC949 Very Low-Power, 12-Bit, 20MSPS Monolithic A/D Convertter
N
August 1996
Comlinear CLC949
Very Low-Power, 12-Bit, 20MSPS Monolithic Converter
© 1996 National Semiconductor Corporation http://www.national.com
Printed in the U.S.A.
http://www.national.com 2
PARAMETERS CONDITIONS TYP
MIN/MAX RATINGS
UNITS SYMBOL
Case Temperature +25˚C 0 to 70˚C -40 to 85˚C
DYNAMIC CHARACTERISTICS
overvoltage recovery V
IN
= 1.5FS 15 25 25 25 ns OR effective aperture delay 3.0 6.2 6.2 6.2 ns TA aperture jitter 7.0 15 15 15 ps(rms) AJ slew rate 400 V/µSSR settling time 12 ns ST
NOISE and DISTORTION (20MSPS)
Signal-to-Noise Ratio (no harmonics)
4.985MHz; FS 68 66 66 66 dB SNR2
9.663MHz; FS 68 66 66 66 dB SNR3
Spurious-Free Dynamic Range
4.985MHz; FS -1dB 72 dBc SFDR2
9.663MHz; FS -1dB 72 63 58 55 dBc SFDR3
Intermodulation Distortion
f
1
= 5.58MHz @ FS -7dB; f2 = 5.70MHz @ FS -7dB -70 dBc IMD 3dB bandwidth (full power) 100 MHz BW
NOISE and DISTORTION (5MSPS, low bias)
Signal-to-Noise Ratio (no harmonics)
2.4MHz; FS 70 68 68 67 dB SNR1
Spurious-Free Dynamic Range
2.4MHz; FS -1dB 78 66 66 64 dBc SFDR1
NOISE and DISTORTION (25.6MSPS, high bias)
Signal-to-Noise Ratio (no harmonics)
9.894MHz; FS 67 63 63 63 dB SNR4
Spurious-Free Dynamic Range
9.894MHz; FS-1dB 67 59 53 48 dBc SFDR4
DC ACCURACY and PERFORMANCE
differential non-linearity dc; FS 0.5 1.0 1.0 1.0 LSB DNL integral non-linearity dc; FS 1.2 3.5 3.5 3.5 LSB INL common mode rejection ratio dc 60 dB CMRR missing codes 0 0 0 0 codes MC mid-scale offset 5.0 25 25 25 mV VIO
temperature coefficient 15 µV/°C DVIO gain error 1.0 5.0 5.0 5.0 %FS GE power supply rejection
V
dda
dc 55 dB PSRA
V
ddd
dc 50 dB PSRD
VOLTAGE REFERENCE CHARACTERISTICS
positive reference voltage (internal) 3.25 3.24-3.26 3.24-3.26 3.24-3.26 V VREFP negative reference voltage (internal) 1.25 1.24-1.26 1.24-1.26 1.24-1.26 V VREFN differential reference voltage (Vrefp - Vrefn) 2.0 1.98-2.02 1.98-2.02 1.98-2.02 V VDIFF
ANALOG INPUT PERFORMANCE
common mode range 2 - 3 V VCM differential range ± 2 V VDM
analog input bias current ±0.1 ±1.0 ±1.0 ±1.0 µA IBN analog input capacitance 5.0 10 10 10 pF CIN
DIGITALINPUTS
CMOS input voltage logic LOW 1 1 1 V VIL
logic HIGH 4.0 4.0 4.0 V VIH
CMOS input current logic LOW ±0.1 ±1.0 ±1.0 ±1.0 µA IIL
logic HIGH ±0.1 ±1.0 ±1.0 ±1.0 µA IIH
DIGITALOUTPUTS
CMOS output voltage logic LOW 0.25 0.5 0.5 0.5 V VOL
logic HIGH 4.8 4.5 4.5 4.5 V VOH
TIMING
maximum conversion rate 30 30 30 30 MSPS CR minimum conversion rate 10 10 10 10 KSPS CRM data hold time 7.0 4.5 4.5 4.5 ns THLD pipeline delay 6.5 6.5 6.5 6.5 clocks
POWER REQUIREMENTS
supply current (+V
dd
) 44 60 60 60 mA IDD power dissipation 20MSPS 220 300 300 300 mW PDM power dissipation (low bias) 5MSPS 65 mW PDL power dissipation (high bias) 30MSPS 400 mW PDH
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters.
CLC949 Electrical Characteristics
(+VDD= +5V, Medium Bias (200µA): unless specified)
3 http://www.national.com
CLC949 Typical Performance Characteristics
(+VDD= + 5V, Med Bias, Fs= 20MSPS: unless specified)
Output Spectrum 1MHz
Output Level (dBFS)
Frequency (MHz)
0
-40
0
2
4
-120
-80
10
68
-20
-60
-100
Output Spectrum 9MHz
Output Level (dBFS)
Frequency (MHz)
0
-40
0
2
4
-120
-80
10
68
-20
-60
-100
Output Spectrum 15MHz
Output Level (dBFS)
Frequency (MHz)
0
-40
0
2
4
-120
-80
10
68
-20
-60
-100
SNR & SFDR vs. Input Amplitude 1MHz
SNR (dB) & SFDR (dBc)
Input Amplitude (dBFS)
80
60
-50
-30
-10
20
0
40
SNR
SFDR
10
-40 -20 0
SNR & SFDR vs. Input Amplitude 5MHz
SNR (dB) & SFDR (dBc)
Input Amplitude (dBFS)
80
60
-50
-30
-10
20
0
40
SNR
SFDR
10
-40 -20 0
SNR & SFDR vs. Input Amplitude 9MHz
SNR (dB) & SFDR (dBc)
Input Amplitude (dBFS)
80
60
-50
-30
-10
20
0
40
SNR
SFDR
10
-40 -20 0
SNR & SFDR vs. Input Frequency
SNR (dB), SFDR (dBc)
Input Frequency (MHz)
80
100k
10M
100M
50
0
60
70
1M
FS = 20MHz
SFDR (dBc)
SNR (dB)
SNR vs. Sample Rate vs. Bias
SNR (dB)
Sample Rate (MSPS)
70
60
0.1
1.0
10
40
30
50
100
Low Bias
High Bias
Medium Bias
Fin = 5MHz
SFDR vs. Sample Rate vs. Bias
SFDR (dBc)
Sample Rate (MSPS)
80
70
0.1
1.0
10
50
40
60
100
Low Bias
Medium Bias
High Bias
Fin = 5MHz
Two Tone Intermodulation Distortion
Output Level (dBFS)
Frequency (MHz)
0
-40
0
2
4
-120
-80
10
68
-20
-60
-100
Integral Non-Linearity
INL (LSBs)
Output Code
2.5
1.5
0
1000
2000
-2.5
0.5
3000 4000
2
1
0
-0.5
-1
-1.5
-2
Differential Non-Linearity
DNL (LSBs)
Output Code
1.5
0.5
0
1000
2000
-1.5
-0.5
3000 4000
1
0
-1
Pulse Settling Response
ADC Output Code
Time (ns)
4000
0
100
150
1000
0
2000
200
3000
50
SFDR vs. Input Frequency
40°C
80°C
60°C
0°C
20°C
-20°C
SFDR (dBc)
Input Frequency (MHz)
80
76
72
68
64
60
1
10
100
I/O Timing (Convert CLK & Bit Skew)
Time (ns)
400
300
0
4
16
100
0
200
20
812
Output Data
Convert
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Recommended Operating Conditions Absolute Maximum Ratings*
supply voltage (V
DD
) +5V ±5% differential voltage between any two GND’s <10mV analog input voltage range (full scale) 1.25 – 3.25V digital input voltage range 0 to V
DD
operating temperature range 0°C to 70°C clock pulse-width high (C
pwh
) >25ns
supply voltage (V
DD
) -0.5V to +7V differential voltage between any two GND’s 200mV analog input voltage range -0.5V to +V
DD
digital input voltage range -0.5V to +V
DD
output short circuit duration (one pin to gnd) infinite junction temperature +175°C storage temperature range -65°C to +150°C lead solder duration (+300°C) 10 sec
*NOTE: Absolute maximum ratings are limiting values, to be applied individually, and beyond which the serviceability of the circuit may be impaired. Functional operability under any of these conditions is not necessarily implied. Exposure to maximum ratings for extended periods may affect device reliability.
Pinout & Pin Description and Usage
References (V
REFN
, V
REFP
, V
REFNO
, V
REFPO
, V
REFNC
,
V
REFPC
, V
REFMO
)
To use the internal references, connect V
REFPO
to V
REFP
and V
REFNO
to V
REFN
. The nominal value for V
REFPO
is
3.25V and for V
REFNO
is 1.25V. V
REFPC
and V
REFNC
are internal reference points which should be bypassed to GND with a 0.1µF capacitor. V
REFMO
is an output voltage that is equal to the mid point of the reference range and can be used to apply the appropriate offset to the analog inputs. For a more detailed discussion on references, see the paragraph on references in the applications section of this datasheet.
Analog Input (V
INP
, V
INN
)
The analog input to the CLC949 is a differential signal applied to V
INP
and V
INN
. For more detail on driving the inputs, see the paragraphs in the applications section of this datasheet.
Power Supplies and Grounds (V
DDA
, V
DDD
, GNDA, GNDD)
The power and ground pins of the CLC949 are split into those that supply the analog portions of the integrated circuit (V
DDA
, GNDA) and the digital portions of the chip
(V
DDD
, GNDD). If your system uses separate power and ground planes, then performance can be improved by making use of the appropriate pins. In many systems, the power pins will all be tied together and the GND pins
will all be tied together. For more detailed discussion, please refer to the paragraph on power and grounds in the applications section of the databook.
Clock (CLK)
The CLK accepts a CMOS clock input. Samples are taken on the falling edges of the CLK and data emerges 6 1/2 clock cycles later, on to the rising edge of the CLK.
Output Data (D1-D12, MSBINV, OE\)
The data emerges from the CLC949 as CMOS level digital data on D1(MSB) through D12(LSB). The outputs can be put into a high impedance state by bringing OE\ high. There is an internal pulldown
resistor so that if this input is left open, the output data is enabled. MSBINV will invert the MSB of the output data. With MSBINV in the high state, the output data is two’s complement, when low, the output data format is offset binary. An internal pulldown resistor makes the output default to offset binary if MSBINV is left open.
Bias Control (BCO, BC1, BIASC)
The DC bias current of the CLC949 is controlled by three pins: BCO, BC1, and BIASC. BC0 and BC1 are digital CMOS inputs and set the bias current in accordance with the truth table below:
BC0 BC1 Bias Current PD@10MSPS
0 0 Default: Med Bias (200µA) 200mW 1 0 Analog Mode Variable 0 1 High Bias (400µA) 350mW 1 1 Low Bias (50µA) 75mW
In the analog mode, the user provides a bias current through the BIASC pin of the CLC949. As the bias current is increased, the power dissipation of the CLC949 is increased and the part becomes capable of increased conversion rates.
NC
No connection - leave these pins open.
44-Pin PLCC
TOP VIEW
123456 44 43 42 41 40
V
DDDVDDDVDDD
NC
CLK
BC1
V
DDAVDDAVDDAVREFNO
V
REFPO
2322
212019
18
24 25
26 27 28
GNDDGND
D
MSBINV
OE\
D1(MSB)
D2
GND
D
GND
A
GND
A
GND
A
GND
A
12
11
10
9
8
7
13 14 15 16 17
NC
BIASC
GND
A
V
INP
V
INN
GND
A
V
REFNC
V
REFPC
V
REFN
V
REFP
V
REFMO
34
35
36
37
38
39
33 32 31 30 29
D8 D7 D6 D5 D4 D3
D9
D10
D11
D12(LSB)
BCO
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