NSC ADC1061CIN, ADC1061MWC, ADC1061CIWM Datasheet

ADC1061 10-Bit High-Speed µP-Compatible A/D Converter with Track/Hold Function
General Description
Using a modified half-flash conversion technique, the 10-bit ADC1061 CMOS analog-to-digital converter offers very fast conversion timesyet dissipates a maximum of only 235 mW. The ADC1061 performs a 10-bit conversion in two lower-resolution “flashes”, thus yielding a fast A/D without the cost, power dissipation, and other problems associated with true flash approaches.
The analog input voltage to theADC1061is tracked andheld by an internal sampling circuit. Input signals at frequencies from DC to greater than 160 kHz can therefore be digitized accurately without the need for an external sample-and-hold circuit.
For ease of interface to microprocessors, the ADC1061 has been designed to appear as a memory location or I/O port without the need for external interface logic.
Features
n 1.8 µs maximum conversion time to 10 bits n Low power dissipation: 235 mW (maximum) n Built-in track-and-hold n No external clock required n Single +5V supply n No missing codes over temperature
Applications
n Waveform digitizers n Disk drives n Digital signal processor front ends n Mobile telecommunications
Simplified Block and Connection Diagrams
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
DS010559-2
June 1999
ADC1061 10-Bit High-Speed µP-Compatible A/D Converter with Track/Hold Function
© 1999 National Semiconductor Corporation DS010559 www.national.com
Simplified Block and Connection Diagrams (Continued)
Ordering Information
Industrial (−40˚C TA≤ 85˚C) Package
ADC1061CIN N20A ADC1061CIWM M20B
Pin Descriptions
Symbol Function
DV
CC
,
AV
CC
(1, 6)
These are the digital and analog positive supply voltage inputs. They should always be connected to the same voltage source, but are brought out separately to allow for separate bypass capacitors. Each supply pin should be bypassed with a 0.1 µF ceramic capacitor in parallel with a 10 µF tantalum capacitor.
INT (2)
This is the active low interrupt output. INT goes low at the end of each conversion, and returns to a high state following the rising edge of RD .
S/H(3) This is the Sample/Hold control input. When this pin is forced low, it causes the analog input signal to be
sampled and initiates a new conversion.
RD (4)
This is the active low Read control input. When this pin is low, any data present in the ADC1061’s output registers will be placed on the data bus. In Mode 2, the Read signal must be low until INT goes low. Until
INT goes low, the data at the output pins will be incorrect. CS (5) This is the active low Chip Select control input. This pin enables the S /H and RD inputs. V
REF−
,
V
REF+
(7, 9)
These are the reference voltage inputs. They may be placed at any voltage between GND − 50 mV and
V
CC
+ 50 mV, but V
REF+
must be greater than V
REF−
. An input voltage equal to V
REF−
produces an
output code of 0, and an input voltage equal to V
REF+
− 1LSB produces an output code of 1023.
V
IN
(8) This is the analog input pin. The impedance of the source should be less than 500for best accuracy
and conversion speed. To avoid damage to the ADC1061, V
IN
should not be allowed to extend beyond the power supply voltages by more than 300 mV unless the drive current is limited. For accurate conversions, V
IN
should not extend more than 50 mV beyond the supply voltages.
GND (10) This is the power supply ground pin. The ground pin should be connected to a “clean” ground reference
point.
DB0–DB9
(11-20)
These are the TRI-STATE output pins.
Dual-In-Line Package
DS010559-1
Top View
Order Number
ADC1061CIN or ADC1061CIWM
See NS Package J20A,
M20B or N20A
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V
+
=
AV
CC
=
DV
CC
) −0.3V to +6V
Voltage at any Input or Output −0.3V to V
+
+0.3V Input Current at Any Pin (Note 3) 5 mA Package Input Current (Note 3) 20 mA Power Dissipation (Note 4) 875 mW ESD Susceptibility (Note 5) 1500V Soldering Information (Note 6)
N Package (10 seconds) 260˚C
J Package (10 seconds) 300˚C SO Package (Note 6)
Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C
Junction Temperature, T
J
+150˚C
Storage Temperature Range −65˚C to +150˚C
Operating Ratings (Notes 1, 2)
Temperature Range T
MIN
TA≤ T
MAX
ADC1061CIN, ADC1061CIWM −40˚C TA≤ +85˚C
Supply Voltage Range 4.5V to 5.5V
Converter Characteristics
The following specifications apply for V
+
=
+5V, V
REF(+)
=
5V, and V
REF(−)
=
GND unless otherwise specified. Boldface lim-
its apply for T
A
=
T
J
=
T
MIN
to T
MAX
; all other limits T
A
=
T
J
=
25˚C.
Symbol Parameter Conditions Typical Limit Units
(Note 7) (Note 8) (Limit) Resolution 10 Bits Total Unadjusted Error
±
1.0
±
2.0 LSB (Max)
Integral Linearity Error
±
0.3
±
1.5 LSB (Max)
Differential Linearity Error
±
1.0 LSB (Max)
Offset Error
±
0.1
±
1.0 LSB (Max)
Fullscale Error
±
0.5
±
1.0 LSB (Max)
R
REF
Reference Resistance 0.65 0.4 k(Min)
R
REF
Reference Resistance 0.65 0.9 k(Max)
V
REF(+)
V
REF(+)
Input Voltage V++ 0.05 V (Max)
V
REF(−)
V
REF(−)
Input Voltage GND − 0.05 V (Min)
V
REF(+)
V
REF(+)
Input Voltage V
REF(−)
V (Min)
V
REF(−)
V
REF(−)
Input Voltage V
REF(−)
V (Max)
V
IN
Input Voltage V++ 0.05 V (Max)
V
IN
Input Voltage GND − 0.05 V (Min) Analog Input Leakage Current CS=V
+
,V
IN
=
V
+
0.01 3 µA (Max)
CS=V
+
,V
IN
=
GND
0.01 −3 µA (Max)
Power Supply Sensitivity V
+
=
5V
±
5
%
±
0.125
±
0.5 LSB
V
REF
=
4.75V
DC Electrical Characteristics
The following specifications apply for V
+
=
+5V, V
REF(+)
=
5V, and V
REF(−)
=
GND unless otherwise specified. Boldface lim-
its apply for T
A
=
T
J
=
T
MIN
to T
MAX
; all other limits T
A
=
T
J
=
25˚C.
Symbol Parameter Conditions Typical Limit Units
(Note 7) (Note 8) (Limits)
V
IN(1)
Logical “1” Input Voltage V
+
=
5.25V 2.0 V (Min)
V
IN(0)
Logical “0” Input Voltage V
+
=
4.75V 0.8 V (Max)
I
IN(1)
Logical “1” Input Current V
IN(1)
=
5V 0.005 1.0 µA (Max)
I
IN(0)
Logical “0” Input Current V
IN(0)
=
0V −0.005 −1.0 µA (Max)
V
OUT(1)
Logical “1” Output Voltage V
+
=
4.75V I
OUT
=
−360 µA 2.4 V (Min)
V
+
=
4.75V I
OUT
=
−10 µA 4.5 V (Min)
V
OUT(0)
Logical “0” Output Voltage V
+
=
4.75V I
OUT
=
1.6 mA 0.4 V (Max)
I
OUT
TRI-STATE®Output Current V
OUT
=
5V 0.1 50 µA (Max)
V
OUT
=
0V −0.1 −50 µA (Max)
DI
CC
DVCCSupply Current CS=WR=RD=0 0.1 2 mA (Max)
AI
CC
AVCCSupply Current CS=WR=RD=0 30 45 mA (Max)
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AC Electrical Characteristics
The following specifications apply for V
+
=
+5V, t
r
=
t
f
=
20 ns, V
REF(+)
=
5V, and V
REF(−)
=
GND unless otherwise specified.
Boldface limits apply for T
A
=
T
J
=
T
MIN
to T
MAX
; all other limits T
A
=
T
J
=
25˚C.
Symbol Parameter Conditions Typical Limit Units
(Note 7) (Note 8) (Limits)
t
CONV
Conversion Time from Rising Edge Mode 1 1.2 1.8 µs (Max) of S /H to Falling Edge of INT
t
CRD
Conversion Time for MODE 2 Mode 2 1.8 2.4 µs (Max) (RD Mode)
t
ACC1
Access Time (Delay from Falling Mode 1; C
L
=
100 pF 20 50 ns (Max)
Edge of RD to Output Valid)
t
ACC2
Access Time (Delay from Falling Mode 2; C
L
=
100 pF t
CRD
+50 ns (Max)
Edge of RD to Output Valid)
t
SH
Minimum Sample Time (
Figure 1
); (Note 9) 250 ns (Max)
t
1H,t0H
TRI-STATE Control (Delay from Rising R
L
=
1k, C
L
=
10 pF 20 50 ns (Max)
Edge of RD to High-Z State)
t
INTH
Delay from Rising Edge of RD 10 50 ns (Max) to Rising Edge of INT
t
ID
Delay from INT to Output Valid C
L
=
100 pF 20 50 ns (Max)
t
P
Delay from End of Conversion 10 20 ns (Max) to Next Conversion
SR Slew Rate for Correct 2.5 V/µs
Track-and-Hold Operation
C
VIN
Analog Input Capacitance 35 pF
C
OUT
Logic Output Capacitance 5 pF
C
IN
Logic Input Capacitance 5 pF
Note 1: AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamageto the device may occur. Operating Ratings indicate conditions for which the device is func­tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci­fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: All voltages are measured with respect to GND, unless otherwise specified. Note 3: When the input voltage (V
IN
) at any pin exceeds the power supply rails (V
IN
<
V−or V
IN
>
V+) the absolute value of current at that pin should be limited
to 5 mA or less. The 20 mA package input current limits the number of pins that can safely exceed the power supplies with an input of 5 mA to four. Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
JMAX
, θJAand the ambient temperature, TA. The maximum
allowable power dissipation at any temperature is P
D
=
(T
JMAX−TA
)/θJAor the number given in theAbsolute Maximum Ratings, whichever is lower. For this device,
T
JMAX
=
150˚C, and the typical thermal resistance (θ
JA
) when board mounted is 47˚C/W for the plastic (N) package, 85˚C/W for the ceramic (J) package, and 65˚C/W
for the small outline (WM) package.
Note 5: Human body model, 100 pF discharged through a 1.5 kresistor. Note 6: SeeAN-450 “Surface Mounting Methods and Their Effect on Product Reliability” or the section titled “Surface Mount” found in a current National Semicon-
ductor Linear Data Book for other methods of soldering surface mount devices.
Note 7: Typicals are at 25˚C and represent most likely parametric norm. Note 8: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 9: Accuracy may degrade if t
SH
is shorter than the value specified.
TRI-STATE Test Circuits and Waveforms
DS010559-3
DS010559-4
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