NSC 54F299LMQB, 54F299DMQB Datasheet

TL/F/9515
54F/74F299 Octal Universal Shift/Storage Register with Common Parallel I/O Pins
May 1995
54F/74F299 Octal Universal Shift/Storage Register with Common Parallel I/O Pins
General Description
The ’F299 is an 8-bit universal shift/storage register with TRI-STATE
outputs. Four modes of operation are possi­ble: hold (store), shift left, shift right and load data. The par­allel load inputs and flip-flop outputs are multiplexed to re­duce the total number of package pins. Additional outputs, Q
0–Q7
, are provided to allow easy serial cascading. A sep-
arate active LOW Master Reset is used to reset the register.
Features
Y
Common parallel I/O for reduced pin count
Y
Additional serial inputs and outputs for expansion
Y
Four operating modes: shift left, shift right, load and store
Y
TRI-STATE outputs for bus-oriented applications
Y
Guaranteed 4000V minimum ESD protection
Commercial Military
Package
Package Description
Number
74F299PC N20A 20-Lead (0.300×Wide) Molded Dual-In-Line
54F299DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line
74F299SC (Note 1) M20B 20-Lead (0.300×Wide) Molded Small Outline, JEDEC
74F299SJ (Note 1) M20D 20-Lead (0.300×Wide) Molded Small Outline, EIAJ
54F299FM (Note 2) W20A 20-Lead Cerpack
54F299LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.
Note 2: Military grade device with environmental and burn-in processing. Use suffix
e
DMQB, FMQB and LMQB.
Logic Symbols
TL/F/9515– 1
IEEE/IEC
TL/F/9515– 4
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.
Connection Diagrams
Pin Assignment
for DIP, SOIC and Flatpak
TL/F/9515– 2
Pin Assignment
for LCC
TL/F/9515– 3
Unit Loading/Fan Out
54F/74F
Pin Names Description
U.L. Input I
IH/IIL
HIGH/LOW Output IOH/I
OL
CP Clock Pulse Input (Active Rising Edge) 1.0/1.0 20 mA/b0.6 mA DS
0
Serial Data Input for Right Shift 1.0/1.0 20 mA/b0.6 mA
DS
7
Serial Data Input for Left Shift 1.0/1.0 20 mA/b0.6 mA
S0,S
1
Mode Select Inputs 1.0/2.0 20 mA/b1.2 mA
MR
Asynchronous Master Reset Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA OE1,OE2TRI-STATE Output Enable Inputs (Active LOW) 1.0/1.0 20 mA/b0.6 mA I/O
0
–I/O7Parallel Data Inputs or 3.5/1.083 70 mA/b0.65 mA
TRI-STATE Parallel Outputs 150/40(33.3)
b
3 mA/24 mA (20 mA)
Q
0,Q7
Serial Outputs 50/33.3
b
1 mA/20 mA
Functional Description
The ’F299 contains eight edge-triggered D-type flip-flops and the interstage logic necessary to perform synchronous shift left, shift right, parallel load and hold operations. The type of operation is determined by S
0
and S1, as shown in the Mode Select Table. All flip-flop outputs are brought out through TRI-STATE buffers to separate I/O pins that also serve as data inputs in the parallel load mode. Q
0
and Q
7
are also brought out on other pins for expansion in serial shifting of longer words.
A LOW signal on MR
overrides the Select and CP inputs and resets the flip-flops. All other state changes are initiated by the rising edge of the clock. Inputs can change when the clock is in either state provided only that the recommended setup and hold times, relative to the rising edge of CP, are observed.
A HIGH signal on either OE
1
or OE2disables the TRI­STATE buffers and puts the I/O pins in the high impedance state. In this condition the shift, hold, load and reset opera­tions can still occur. The TRI-STATE outputs are also dis­abled by HIGH signals on both S
0
and S1in preparation for
a parallel load operation.
Mode Select Table
Inputs
Response
MR S1S0CP
L X X X Asynchronous Reset; Q0–Q
7
e
LOW
HHHLParallel Load; I/O
n
x
Q
n
HLHLShift Right; DS
0
x
Q0,Q
0
x
Q1, etc.
HHLLShift Left; DS
7
x
Q7,Q
7
x
Q6, etc.
H L L X Hold
HeHIGH Voltage Level L
e
LOW Voltage Level
X
e
Immaterial
L
e
LOW-to-HIGH Clock Transition
2
Logic Diagram
TL/F/9515– 5
Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays.
3
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Storage Temperature
b
65§Ctoa150§C
Ambient Temperature under Bias
b
55§Ctoa125§C
Junction Temperature under Bias
b
55§Ctoa175§C
Plastic
b
55§Ctoa150§C
V
CC
Pin Potential to
Ground Pin
b
0.5V toa7.0V
Input Voltage (Note 2)
b
0.5V toa7.0V
Input Current (Note 2)
b
30 mA toa5.0 mA
ESD Last Passing Voltage (Min) 4000V
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Voltage Applied to Output
in HIGH State (with V
CC
e
0V)
Standard Output
b
0.5V to V
CC
TRI-STATE Output
b
0.5V toa5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
Recommended Operating Conditions
Free Air Ambient Temperature
Military
b
55§Ctoa125§C
Commercial 0
§
Ctoa70§C
Supply Voltage
Military
a
4.5V toa5.5V
Commercial
a
4.5V toa5.5V
DC Electrical Characteristics
Symbol Parameter
54F/74F
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized as a LOW Signal
V
CD
Input Clamp Diode Voltage
b
1.2 V Min I
IN
eb
18 mA
V
OH
Output HIGH 54F 10% VCC2.5 I
OH
eb
1mA(Q0,Q7, I/On)
Voltage 54F 10% VCC2.4 I
OH
eb
3 mA (I/On)
74F 10% V
CC
2.5 V Min
I
OH
eb
1mA(Q0,Q7, I/On)
74F 10% V
CC
2.4 I
OH
eb
3 mA (I/On)
74F 5% V
CC
2.7 I
OH
eb
1mA(Q0,Q7, I/On)
74F 5% V
CC
2.7 I
OH
eb
3 mA (I/On)
V
OL
Output LOW 54 10% V
CC
0.5 I
OL
e
20 mA
Voltage 74 10% V
CC
0.5 V Min I
OL
e
20 mA (Q0,Q7)
74 10% V
CC
0.5 I
OL
e
24 mA (I/On)
I
IH
Input HIGH 54F 20.0
mA Max
V
IN
e
2.7V (CP, DS0,DS7,S0,S1,
Current 74F 5.0 MR
,OE1,OE
2
)
I
BVI
Input HIGH Current 54F 100
mA Max
V
IN
e
7.0V (CP, DS0,DS7,S0,S1,
Breakdown Test 74F 7.0 MR
,OE1,OE2)
I
BVIT
Input HIGH Current 54F 1.0
mA Max
V
IN
e
5.5V (I/On)
Breakdown Test (I/O) 74F 0.5
I
CEX
Output HIGH 54F 250
mA Max
V
OUT
e
V
CC
Leakage Current 74F 50
V
ID
Input Leakage
74F 4.75 V 0.0
I
ID
e
1.9 mA
Test All Other Pins Grounded
I
OD
Output Leakage
74F 3.75 mA 0.0
V
IOD
e
150 mV
Circuit Current All Other Pins Grounded
I
IL
Input LOW Current
b
0.6 mA Max
V
IN
e
0.5V (CP, DS0,DS7,MR,OE1,OE2)
b
1.2 V
IN
e
0.5V (S0,S1)
I
IH
a
Output Leakage Current
70 mA Max
V
I/O
e
2.7V (I/On)
I
OZH
I
IL
a
Output Leakage Current
b
650 mA Max
V
I/O
e
0.5V (I/On)
I
OZL
I
OS
Output Short-Circuit Current
b
60
b
150 mA Max V
OUT
e
0V
I
ZZ
Bus Drainage Test 500 mA 0.0V V
OUT
e
5.25V
I
CCH
Power Supply Current 68 95 mA Max V
O
e
HIGH
I
CCL
Power Supply Current 68 95 mA Max V
O
e
LOW
I
CCZ
Power Supply Current 68 95 mA Max V
O
e
HIGH Z
4
AC Electrical Characteristics
74F 54F 74F
T
A
ea
25§C
T
A,VCC
e
Mil TA,V
CC
e
Com
Symbol Parameter V
CC
ea
5.0V C
L
e
50 pF C
L
e
50 pF
Units
C
L
e
50 pF
Min Typ Max Min Max Min Max
f
max
Maximum Input Frequency 70 100 85 70 MHz
t
PLH
Propagation Delay 4.0 7.0 8.0 4.0 9.0 4.0 8.5
t
PHL
CP to Q0or Q
7
4.5 6.5 8.0 4.5 9.5 4.5 8.5 ns
t
PLH
Propagation Delay 3.5 7.0 9.0 3.5 10.0 3.5 10.0
t
PHL
CP to I/O
n
4.0 8.5 9.0 4.0 11.0 4.0 10.0
t
PHL
Propagation Delay
5.5 7.5 9.5 5.5 12.5 5.5 10.5
MR
to Q0or Q
7
ns
t
PHL
Propagation Delay
5.5 11.0 10.0 5.5 12.0 5.5 10.5
MR
to I/O
n
t
PZH
Output Enable Time 3.5 6.0 8.0 3.0 9.5 3.5 9.0
t
PZL
OE to I/O
n
4.0 7.0 10.0 4.0 13.0 4.0 11.0 ns
t
PHZ
Output Disable Time 2.0 4.5 6.0 1.5 7.0 2.0 7.0
t
PLZ
OE to I/O
n
1.0 4.0 5.5 1.0 6.5 1.0 6.5
t
PZH
Output Enable Time 3.5 9.0 3.0 10.5 3.5 10.0
ns
t
PZL
Snto I/O
n
4.0 10.0 4.0 13.0 4.0 11.0
t
PHZ
Output Disable Time 2.5 6.0 1.5 7.0 2.5 7.0
ns
t
PLZ
Snto I/O
n
1.5 5.5 1.0 6.5 1.5 6.5
AC Operating Requirements
74F 54F 74F
Symbol Parameter
T
A
ea
25§C
T
A,VCC
e
Mil TA,V
CC
e
Com Units
V
CC
ea
5.0V
Min Max Min Max Min Max
ts(H) Setup Time, HIGH or LOW 8.5 10.0 8.5 t
s
(L) S0or S1to CP 8.5 7.5 8.5
ns
th(H) Hold Time, HIGH or LOW 0 0 0 t
h
(L) S0or S1to CP 0 0 0
ts(H) Setup Time, HIGH or LOW 5.0 5.0 5.0 t
s
(L) I/On,DS0or DS7to CP 5.0 5.0 5.0
ns
th(H) Hold Time, HIGH or LOW 2.0 2.0 2.0 t
h
(L) I/On,DS0or DS7to CP 2.0 2.0 2.0
tw(H) CP Pulse Width 5.0 5.0 5.0
ns
t
w
(L) HIGH or LOW 5.0 5.0 5.0
tw(L) MR Pulse Width, LOW 5.0 6.0 5.0 ns
t
rec
Recovery Time, MR to CP 7.0 12.0 7.0 ns
5
Ordering Information
The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows:
74F 299 S C X
Temperature Range Family Special Variations
74F
e
Commercial QBeMilitary grade device with
54F
e
Military environmental and burn-in
processing
Device Type
X
e
Devices shipped in 13×reel
Package Code
Temperature Range
P
e
Plastic DIP
C
e
Commercial (0§Ctoa70§C)
D
e
Ceramic DIP
M
e
Military (b55§Ctoa125§C)
S
e
Small Outline SOIC JEDEC
SJ
e
Small Outline SOIC EIAJ
F
e
Flatpak
L
e
Leadless Chip Carrier (LCC)
Physical Dimensions inches (millimeters)
20-Lead Ceramic Leadless Chip Carrier (L)
NS Package Number E20A
6
Physical Dimensions inches (millimeters) (Continued)
20-Lead Ceramic Dual-In-Line Package (D)
NS Package Number J20A
20-Lead (0.300×Wide) Molded Small Outline Package, JEDEC (S)
NS Package Number M20B
7
Physical Dimensions inches (millimeters) (Continued)
20-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)
NS Package Number MD20D
20-Lead (0.300×Wide) Molded Dual-In-Line Package (P)
NS Package Number N20A
8
9
54F/74F299 Octal Universal Shift/Storage Register with Common Parallel I/O Pins
Physical Dimensions inches (millimeters) (Continued)
20-Lead Cerpack
NS Package Number W20A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd.
2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia
Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999
Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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