NSC 54F245LMQB, 54F245FMQB, 54F245DMQB Datasheet

TL/F/9503

54F/74F245 Octal Bidirectional Transceiver with TRI-STATE Outputs

June 1995

54F/74F245
Octal Bidirectional Transceiver with TRI-STATE

É

Outputs

General Description

The ’F245 contains eight non-inverting bidirectional buffers
with TRI-STATE outputs and is intended for bus-oriented
applications. Current sinking capability is 24 mA (20 mA Mil)
at the A ports and 64 mA (48 mA Mil) at the B ports. The
Transmit/Receive (T/R

) input determines the direction of
data flow through the bidirectional transceiver. Transmit (ac­tive HIGH) enables data from A ports to B ports; Receive
(active LOW) enables data from B ports to A ports. The
Output Enable input, when HIGH, disables both A and B
ports by placing them in a High Z condition.

Features

Y

Non-inverting buffers

Y

Bidirectional data path

Y

A outputs sink 24 mA (20 mA Mil)

Y

B outputs sink 64 mA (48 mA Mil)

Y

Guaranteed 4000V minimum ESD protection

Commercial Military

Package

Package Description

Number

74F245PC N20A 20-Lead (0.300×Wide) Molded Dual-In-Line

54F245DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line

74F245SC (Note 1) M20B 20-Lead (0.300×Wide) Molded Small Outline, JEDEC

74F245SJ (Note 1) M20D 20-Lead (0.300×Wide) Molded Small Outline, EIAJ

74F245MSA (Note 1) MSA20 20-Lead Molded Shrink Small Outline, EIAJ Type II

54F245FM (Note 2) W20A 20-Lead Cerpack

54F245LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX, SJX and MSAX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

e

DMQB, FMQB and LMQB.

Logic Symbols

TL/F/9503– 3

IEEE/IEC

TL/F/9503– 4

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Connection Diagrams

Pin Assignment for

DIP, SOIC, SSOP and Flatpak

TL/F/9503– 1

Pin Assignment

for LCC

TL/F/9503– 2

Unit Loading/Fan Out

54F/74F

Pin Names Description

U.L. Input I

IH/IIL

HIGH/LOW Output IOH/I

OL

OE Output Enable Input (Active LOW) 1.0/2.0 20 mA/b1.2 mA
T/R

Transmit/Receive Input 1.0/2.0 20 mA/b1.2 mA

A

0–A7

Side A Inputs or 3.5/1.083 70 mA/b0.65 mA
TRI-STATE Outputs 150/40(38.3)

b

3 mA/24 mA (20 mA)

B

0–B7

Side B Inputs or 3.5/1.083 70 mA/b0.65 mA
TRI-STATE Outputs 600/106.6(80)b12 mA/64 mA (48 mA)

Truth Table

Inputs

Output

OE T/R

L L Bus B Data to Bus A
L H Bus A Data to Bus B
H X High Z State

HeHIGH Voltage Level
L

e

LOW Voltage Level

X

e

Immaterial

2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

b

65§Ctoa150§C

Ambient Temperature under Bias

b

55§Ctoa125§C

Junction Temperature under Bias

b

55§Ctoa175§C

Plastic

b

55§Ctoa150§C

V

CC

Pin Potential to

Ground Pin

b

0.5V toa7.0V

Input Voltage (Note 2)

b

0.5V toa7.0V

Input Current (Note 2)

b

30 mA toa5.0 mA

Voltage Applied to Output

in HIGH State (with V

CC

e

0V)

Standard Output

b

0.5V to V

CC

TRI-STATE Output

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

OL

(mA)

ESD Last Passing Voltage (Min) 4000V

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

Recommended Operating
Conditions

Free Air Ambient Temperature

Military

b

55§Ctoa125§C

Commercial 0

§

Ctoa70§C

Supply Voltage

Military

a

4.5V toa5.5V

Commercial

a

4.5V toa5.5V

DC Electrical Characteristics

Symbol Parameter

54F/74F

Units V

CC

Conditions

Min Typ Max

V

IH

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

V

IL

Input LOW Voltage 0.8 V Recognized as a LOW Signal

V

CD

Input Clamp Diode Voltage

b

1.2 V Min I

IN

eb

18 mA

V

OH

Output HIGH 54F 10% V

CC

2.4 I

OH

eb

3mA(An)

Voltage 54F 10% V

CC

2.0 I

OH

eb

12 mA (Bn)

74F 10% V

CC

2.4
V Min

I

OH

eb

3mA(An)

74F 10% V

CC

2.0 I

OH

eb

15 mA (Bn)

74F 5% V

CC

2.7 I

OH

eb

3mA(An)

V

OL

Output LOW 54F 10% V

CC

0.5 I

OL

e

20 mA (An)

Voltage 54F 10% V

CC

0.55
V Min

I

OL

e

48 mA (Bn)

74F 10% V

CC

0.5 I

OL

e

24 mA (An)

74F 10% V

CC

0.55 I

OL

e

64 mA (Bn)

I

IH

Input HIGH 54F 20.0

mA Max V

IN

e

2.7V

Current 74F 5.0

I

BVI

Input HIGH Current 54F 100

mA Max V

IN

e

7.0V (OE, T/R)

Breakdown Test 74F 7.0

I

BVIT

Input HIGH Current 54F 1.0

mA Max V

IN

e

5.5V(An,Bn)

Breakdown (I/O) 74F 0.5

I

CEX

Output HIGH 54F 250

mA Max V

OUT

e

VCC(An,Bn)

Leakage Current 74F 50

V

ID

Input Leakage

74F 4.75 V 0.0

I

ID

e

1.9 mA

Test All Other Pins Grounded

I

OD

Output Leakage

74F 3.75 mA 0.0

V

IOD

e

150 mV

Circuit Current All Other Pins Grounded

I

IL

Input LOW Current

b

1.2 mA Max V

IN

e

0.5V (T/R,OE)

I

IH

a

I

OZH

Output Leakage Current 70 mA Max V

OUT

e

2.7V (An,Bn)

I

IL

a

I

OZL

Output Leakage Current

b

650 mA Max V

OUT

e

0.5V (An,Bn)

3