Nokia 7260 Service Manual 07 rm17 sysmod

Nokia Customer Care

7 - System Module

ISSUE 1 09/2004 COMPANY CONFIDENTIAL
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Nokia Customer Care 7 - System Module
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Table of Contents
Page No
Glossary of Terms............................................................................................... 7
Baseband ........................................................................................................... 10
Block diagram .................................................................................................. 11
Environmental Specifications.......................................................................... 13
Absolute maximum ratings............................................................................... 13
Temperature conditions ................................................................................... 13
Humidity and water resistance......................................................................... 13
Frequencies in baseband................................................................................. 14
PWB................................................................................................................. 14
Characteristics of the PWB ............................................................................ 14
Key components ............................................................................................ 14
Technical Specifications .................................................................................. 16
Baseband core................................................................................................. 16
UPP ................................................................................................................ 16
UEMEK .......................................................................................................... 16
External SRAM and Flash .............................................................................. 16
Energy management........................................................................................ 17
Modes of operation ........................................................................................ 17
No Supply ...................................................................................................... 17
Backup ........................................................................................................... 17
Acting Dead ................................................................................................... 17
Active ............................................................................................................. 17
Sleep Mode .................................................................................................... 18
Charging ........................................................................................................ 18
Power distribution ............................................................................................ 18
DC characteristics............................................................................................ 19
Supply voltage ranges ................................................................................... 19
Baseband regulators ...................................................................................... 19
Function Groups ............................................................................................... 21
Battery.............................................................................................................. 21
Audio................................................................................................................ 21
Internal microphone ....................................................................................... 21
Internal speaker ............................................................................................. 22
IHF speaker ................................................................................................... 23
External audio ................................................................................................ 23
External microphone connection .................................................................... 23
Headset connections ..................................................................................... 23
Test possibilities ............................................................................................. 23
Camera ............................................................................................................ 23
Key features ................................................................................................... 24
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Specifications ................................................................................................. 25
CCP bus ......................................................................................................... 25
CCI bus .......................................................................................................... 25
UIF bus .......................................................................................................... 26
Clocks ............................................................................................................ 26
Test possibility ............................................................................................... 26
Vibra................................................................................................................. 26
Test possibility ............................................................................................... 26
LCD module ..................................................................................................... 26
Characteristics ............................................................................................... 27
LCD connector ............................................................................................... 28
Test possibility ............................................................................................... 29
Keypad............................................................................................................. 29
Test possibility ............................................................................................... 29
Illumination....................................................................................................... 30
Test possibility ............................................................................................... 30
SIM................................................................................................................... 30
Test possibility ............................................................................................... 31
FM radio........................................................................................................... 31
Function ......................................................................................................... 32
Test Possibility ............................................................................................... 32
IR Module......................................................................................................... 32
Interfaces ........................................................................................................... 34
BB-RF interface ............................................................................................... 34
System connector interface ............................................................................. 34
System connector .......................................................................................... 34
ACI ................................................................................................................. 35
FBUS ............................................................................................................. 35
VOUT ............................................................................................................. 35
DC plug .......................................................................................................... 36
Component Placement Hints ........................................................................... 37
Power switch (S2419) ...................................................................................... 38
Helgo RF-chip (N7500) .................................................................................... 38
Camera socket (X1470) ................................................................................... 39
Hardware accelerator (D1470)......................................................................... 39
UEM (D2800) ................................................................................................... 40
Flash (D3000) .................................................................................................. 40
SIM card reader (X2700) ................................................................................. 40
System connector (X2002) .............................................................................. 40
UEM (D2200) ................................................................................................... 41
Battery connector (X2000) ............................................................................... 41
Label placement............................................................................................... 42
RF Module Description ..................................................................................... 43
General specifications of the transceiver ......................................................... 44
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Frequency concept .......................................................................................... 45
RF power supply configuration ........................................................................ 45
RF block diagram............................................................................................. 46
Antenna switch (TX/RX switch)........................................................................ 47
Receiver ......................................................................................................... 48
Transmitter ..................................................................................................... 48
Frequency synthesizer ................................................................................... 48
Signal paths ..................................................................................................... 49
Receiver signal paths ..................................................................................... 49
Transmitter signal paths ................................................................................. 51
Frequency synthesizer signals ....................................................................... 52
Printed Wiring Board ........................................................................................ 53
RF key component placement ......................................................................... 54
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Glossary of Terms

ACI Accessory Control Interface
ADC Analogue to Digital Converter
AFC Automatic Frequency Control
ASIC Application Specific Integrated Circuit
ASM Antenna switch module
BB Baseband
BSI Battery Size Indicator
DCT4 Digital Core Technology, generation 4
DSP Digital Signal Processor
DUT Device under test
EDGE Enhanced Data Rates for Global Evolution
EGPRS Enhanced General Packed Radio Service
EMC Electro Magnetic Compatibility
ESD Electro Static Discharge
FC Functional Cover
FR Full Rate
GMSK Gaussian Minimum Shift Keying
GPRS General Packed Radio Service
GSM Global System for Mobile Communication
GSM900 GSM900 (channels 1 - 124)+extended GSM900
(channels 975 - 1023, 0)
HSCSD High Speed Circuit Switched Data
HW Hardware
IF Interface
IHF Integrated Hands Free
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IMEI International Mobile Equipment Identity
I/O Input/Output
IR Infrared
IrDA Infrared Data Association
LCD Liquid Crystal Display
LED Light Emitting Diode
LDO Low Drop Out
LNA Low Noise Amplifier
LO Local Oscillator
MCU Micro Controller Unit
PA Power Amplifier
Phoenix SW tool of DCT4
PLL Phase Locked Loop
PWB Printed Wired Board
RF Radio Frequency
RTC Real Time Clock
RX Receiver
SA Spectrum analyzer
SIM Subscriber Identification Module
SW Software
TP Test point
TX Transmitter
UEMEK Universal Energy Management ASIC enhanced version
UI User Interface
UPP Universal Phone Processor
USB Universal Serial Bus
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VBU
<COFF>
Back-up Battery Cut Off voltage (typical: 2.0 V)
VCO Voltage controlled oscillator
VCTCXO Voltage controlled temperature compensated oscillator
V
<MSTR+>
Master Reset Threshold (typical: 2.1 V)
8-PSK Phase Shift Keying with 8 states (Modulation scheme for EDGE/
EGPRS)
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Baseband

The RM-17 product is a DCT4.5 Fashion segment phone. It is a triple band EGSM900/ GSM1800/GSM1900 phone.
The HW has the following features:
GPRS and HSCSD with EDGE in up to (2RX + 2TX) (MCS5), without EDGE also in (3RX + 1TX) (MCS6)
DCT4 with AMR and 16 MIDI tones
128/16 Mbit Combo memory
Amazon Active display with 64k colours
Battery BL-5B
PopPort
5-way navigation key with select
TM
interface
•VGA Camera
•Vibra
•IHF
FM radio
IR module
Back-up battery
The RM-17 BB is based on the DCT4/4.5 engine and is compatible to the PopPort ries. The DCT4/4.5 engine consists basically of two ASICs. The UEMEK (Universal Energy Management IC including voltage regulators, charge control and audio circuits, audio IHF am­plifier from DCT4.5) and the UPP (Universal Phone Processor including MCU, DSP and RAM from DCT4).
TM
accesso-
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Block diagram

Figure 1: Baseband block diagram
VV
Camera
LCD
ctive TFD colour
LED drivers
Battery
BL-5B
Backup bat
SIM
RF Interface
FLASH
128 Mbit
SRAM
16 Mbit
UEMEK
UPP8M
Keyboard
Keyboard
Illumination
VIBRA
IR Int
IHF
Charger
DC ack
System connector
Pop-Port
FM-Radio
UEMEK supplies both baseband and RF with power via built in voltage regulators, which are connected to the battery. The RF parts use mainly 2.78 V and the baseband parts 1.8V I/O volt­age. The UPP core is supplied with programmable core voltage of 1.0V, 1.3V or 1.5V. UEMEK includes 7 linear LDO (Low Drop-Out) regulators for baseband and 7 regulators for RF. It also includes 4 current sources for biasing purposes and internal usage. The UEMEK is furthermore supplying the SIM interface with a programmable voltage of 1.8V or 3V.
Note: 5V SIM cards are no longer supported by DCT-4 generation Baseband.
UPP operates from a 26 MHz clock coming from the RF ASIC Helgo. The clock signal is divided by two down to the nominal system clock frequency of 13 MHz. The DSP and MCU contain PLLs, which can multiply the system clock to a higher frequency.
A real time clock function is integrated into the UEMEK, which utilizes the same 32kHz clock supply as the sleep clock.
The communication between UEMEK and UPP is implemented using two bi-directional serial busses, CBUS and DBUS. The CBUS is controlled by the MCU and operates at a speed of 1 MHz. The DBUS is controlled by the MCU and operates at a speed of 13 MHz. Both processors are located in the UPP.
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The UEMEK ASIC handles the analog interface between the Baseband and the RF section. UEMEK provides A/D and D/A conversion of the in-phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the user interface. The UEMEK supplies the analog TXC and AFC signals to the RF section according to UPP signal control. There are also separate signals for PDM coded audio. Digital speech processing is handled by the DSP inside UPP ASIC.
UEMEK is a dual voltage circuit, the digital parts are running from the baseband supply 1.8V and the analog parts are running from the analog supply 2.78V. Also VBAT is directly used (Vi­bra, LED-driver, Camera Regulator, FCI).
The Baseband supports both internal and external microphone inputs and speaker outputs. Keypad tones, DTMF, and other audio tones are generated and encoded by the UPP and trans­mitted to the UEMEK for decoding. An external vibra alert control signals are generated by the UEMEK with separate PWM outputs.
EMC shielding is implemented using a soldered shielding, RF cans and PWB grounding.
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Environmental Specifications

Absolute maximum ratings

Table 1: Absolute maximum ratings
Signal Note
Battery Voltage (Idle) -0.3…5.5V
Battery Voltage (Call) Max 4.8V
Charger Input Voltage -0.3V …16V

Temperature conditions

Table 2: Temperature conditions
Condition Min Max
Normal operating temperature -10°C+55°C Reduced functionality -25°C+75°C Storage -40°C+85°C

Humidity and water resistance

Table 3: Humidity conditions
Condition Min Max
Relative Humidity 5% 95%
The module is not protected against water.
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Frequencies in baseband

Table 4: Frequencies in baseband
Frequency Context UPP UEMEK Flash SIM Comment
32 kHz SleepClk X
1 MHz CBUS X X
Up to 1 MHz RFConvClk X X Estimation
6,5 MHz Display IF X
3,25 MHz SIMIF X X Min
13 MHz DBUS, RFBUClk X X
26 MHz RF Clk X
52 MHz Memory Clock X X
PWB
Characteristics of the PWB
•Single PWB
8 layer board
Double side assembled
Key components
Figure 2: Key components
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Table 5: Key components
Position Component Name Code
D1470 HW Accelerator 4377033
D2800 UPP8M v 3.5 4371105
D2200 UEMEKv2.0 4376371
D3000 Combo Memory (128M NOR + 16M UTRAM) 4347043
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Technical Specifications

Baseband core

UPP
Main characteristics of the used UPP are:
DSP, LEAD3 16 bit DSP core 32 bit IF max. 200 MHz
MCU based on ARM7 RISC MCU core max 50 MHz
Internal 8 Mbit SRAM (PDRAM)
General purpose UARTS
SIM card interface
Accessory interface (ACI)
Interface control for Keypad, LCD, Audio and UEM control
Handling of BB-RF Interface
UEMEK
Main characteristics of the used UEMEK are:
ACI support
Audio codec
11 Channel A/D converter
Auxiliary A/D converter
32 KHz crystal oscillator
SIM interface and drivers
Security logic
Storage of IMEI code
Buzzer and vibra motor PWM drivers
2 LED drivers, keyboard and display backlight drivers
Voltage reference for analogue blocks
Charging function
Baseband regulators
RF regulators
RF interface converters
External SRAM and Flash
The Combo-Memory is a multi chip package memory which combines 128 Mbit (8Mx16) muxed burst multibank flash and 16 Mbit muxed CMOS PSRAM (Pseudo SRAM: DRAM with SRAM interface).
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The combo is supplied by single 1,8 V for read, write and erase operations. For accelerated flash programming, Vpp = 9.0 V has to be applied to VPP input of the combo device.
The combo memory is housed in a 44-ball FBGA.

Energy management

The energy management of RM-17 is based on BB 4.0 architecture. A so-called semi fixed bat­tery (BL-5B) supplies power primarily to UEMEK ASIC and the RF PA. The UEMEK includes several regulators to supply RF and Baseband. It provides energy management including pow­er up/down procedure. (If the main battery is not present, a cell capacitor maintains backup power supply for the RTC part of UEMEK.)
Modes of operation
The baseband engine has six different functional modes: Since the UEMEK controls the regu­lated power distribution; each of these states affects the general functionality of the phone.
1. No supply
2. Backup
3. Acting Dead
4. Active
5. Sleep
6. Charging
No Supply
In NO_SUPPLY mode, the phone has no supply voltage. This mode is due to the disconnection of the main battery and backup battery or low battery voltage level in both of the batteries.
The phone is exiting from NO_SUPPLY mode when sufficient battery voltage level is detected. The battery voltage can rise either by connecting a new battery with VBAT > V necting charger and charging the battery above V
MSTR+
.
MSTR+
or by con-
Backup
In BACKUP mode the backup battery has sufficient charge but the main battery can be discon- nected or empty (VBAT < V
and VBACK > VBU
MSTR
COFF
).
The VRTC regulator is disabled in BACKUP mode. VRTC output is supplied without regulation from the backup battery (VBACK). All the other regulators are disabled.
Acting Dead
If the phone is off when the charger is connected, the phone is powered on but enters a state called ”Acting Dead”. To the user, the phone acts as if it was switched off. A battery-charging alert is given and/or a battery charging indication on the display is shown to acknowledge the user that the battery is being charged.
Active
In Active mode, the phone is in normal operation, scanning for channels, listening to a base station, transmitting and processing information. There are several sub-states in the active mode depending on if the phone is in burst reception, burst transmission, if DSP is working etc.
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In Active mode, the RF regulators are controlled by SW writing into UEMEK´s registers wanted settings: VR1A can be enabled or disabled. VR2 can be enabled or disabled and its output volt­age can be programmed to be 2.78V or 3.3V. VR4-VR7 can be enabled, disabled, or forced into the low quiescent current mode. VR3 is always enabled in Active mode.
Sleep Mode
The sleep mode is entered when both MCU and DSP are in stand–by mode. Both processors control the sleep mode. When SLEEPX signal (low) is detected UEMEK enters SLEEP mode. VCORE, VIO and VFLASH1 regulators are put into low quiescent current mode. All the RF reg­ulators are off in SLEEP. When SLEEPX=1 detected UEMEK enters ACTIVE mode and all functions are activated.
The sleep mode is exited either by the expiration of a sleep clock counter in the UEMEK or by some external interrupt, generated by a charger connection, key press, headset connection etc.
In the sleep mode, VCTCXO is shut down and 32 kHz sleep clock oscillator is used as refer­ence clock for the Baseband.
Charging
In RM-17, the battery type/size is indicated by a BSI-resistor. The resistor value corresponds to a specific battery capacity. Also BTEMP, NTC resistor, is located on an engine board.
The battery voltage, temperature, size and current are measured by the UEMEK controlled by the charging software running in the UPP.
The charging control circuitry (CHACON) inside the UEMEK controls the charging current de­livered from the charger to the battery. The battery voltage rise is limited by turning the UEMEK switch off when the battery voltage has reached 4.2 V. Charging current is monitored by meas­uring the voltage drop across a 220 mOhm resistor.

Power distribution

Under normal conditions, the battery powers the baseband module. Individual regulators locat­ed within the UEMEK regulate the battery voltage VBAT. These regulators supply the different parts of the phone. 7 regulators are dedicated to the RF module and 7 to the baseband module.
The VSIM regulator is able to deliver both 1,8V and 3,0 V DC and thus supporting two different SIM technologies.
The regulator VCORE is likewise adjustable by the MCU. VCORE supplies the core logic of the UPP.
The system connector provides a voltage to supply accessories.
The white LEDs need a higher voltage supply than the battery can supply and are fed by a sep­arate external voltage regulator.
VBAT is directly distributed to the RF power amplifier, IR module, vibra and external baseband regulators.
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Figure 3: Power Distribution Diagram
CAMERA
LCD
LEDs
White LED Driver
Battery
Vibra
Baseband
UEME
RF Regulators
VFLASH1
VAUX3
VLED+
Baseband
RTC
VBAT
Regulators
VAUX2
CHACON
VR1A VR1B
VR2-7
VSIM
VCORE
VANA
VIO
VFLASH1
To RF Parts
6
SIM
UPP
Combo
Memor
FM-Radio
IR
Vout
PA Supply
System Connector

DC characteristics

Supply voltage ranges
Signal Min Nom Max Note
VBAT 3.1V 3.7V 4.2V 3.2V SW cut off
Baseband regulators
Regulator
VCORE 200 1.476 / 1.65 (1.57)
VIO 150 1.72 / 1.88 (1.8)
VSIM1 25 1.745 / 1.855 (1.8)
Table 6: Battery voltage ranges
2.95V HW power off
Table 7: Regulator specification
Load current
(mA)
Limit (V) Min/Max (Typ)
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VANA 80 2.70 / 2.86 (2.78)
VFLASH1 70 2.70 / 2.86 (2.78)
VAUX2 70 2.70 / 2.86 (2.78)
VAUX3 10 2.70 / 2.86 (2.78)
VR2 100 2.70 / 2.86 (2.78)
VR3 20 2.70 / 2.86 (2.78)
VR4 50 2.70 / 2.86 (2.78)
VR5 50 2.70 / 2.86 (2.78)
VR6 50 2.70 / 2.86 (2.78)
VR7 45 2.70 / 2.86 (2.78)
VR1A 5* 4.6 / 4.9 (4.75)
VR1B 5* 4.6 / 4.9 (4.75)
* When both enabled. Load current is 10 mA if other is disabled.
Note: This list shows the band regulators only. Please see other descriptions in the Glossary of Terms and in the dedicated sections.
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Function Groups

Battery

A battery of the type BL-5B is used. It is a Li Ion based standard cell. The battery capacity is 760mAh.
The battery has a three-pin connector (BTEMP is not used). The battery does not support tem­perature measurement inside the battery pack. In order to get temperature information of the battery, the NTC mounted on the PWB within the BB area is used.
Ni based batteries are not supported.
The BSI resistor has a nominal value of 75 kOhm.
Figure 4: Battery BL-5B

Audio

Internal microphone
The internal microphone capsule is mounted to in the PopPortTM system connector. The micro­phone is omni directional and it’s connected to the UEMEK microphone input MIC1P/N. The microphone input is symmetric and the UEMEK (MICB1) provides bias voltage. The micro­phone input on the UEMEK is ESD protected. Spring contacts are used to connect the micro­phone to the PWB.
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Figure 5: Internal microphone connection
Internal speaker
The internal earpiece is a dynamic earpiece with an impedance of 32 ohms. The earpiece is low impedance one since the sound pressure is to be generated using current and not voltage as the supply voltage is restricted to 2.7V. The earpiece is driven directly by the UEMEK and the earpiece driver (EARP & EARN outputs) is a fully differential bridge amplifier with 6 dB gain.
Figure 6: Speaker connection
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IHF speaker
UEMEK has an integrated Audio power amplifier to generate output for the IHF speaker.
Figure 7: Block diagram of IHF
For RM-17, the Integrated Hands Free Speaker is used to generate hands free speech, and also polyphonic ringing tones. The speaker capsule is mounted into the A Cover, and spring contacts are used to connect the IHF Speaker contacts to the PWB.
The IHF is furthermore used to generate alerting and warning tones.
External audio
The product is designed to support a fully differential external audio accessory connection. A headset can be directly connected to the PopPort ed by RM-17. Two different kinds of headsets can be used; stereo and mono.
TM
system connector. Stereo audio is support-
External microphone connection
The external microphone input is fully differential and lines are connected to the UEMEK mi­crophone input MIC2P/N. The UEMEK (MICB2) provides bias voltage. Microphone input lines are ESD protected.
Headset connections
Headset implementation uses separate microphone and earpiece signals. The accessory is de­tected by the ACI signal when the plug is inserted.
Test possibilities
Phoenix audio test
For troubleshooting see Audio faults in Baseband Troubleshooting Instructions.

Camera

RM-17 includes a VGA camera module. The camera supports a video preview mode, with in­tegrated colour processing, and high quality still image mode, which utilizes the existing mem­ory and the processing resources of the phone.
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Figure 8: Camera module
Key features
VGA resolution sensor
On-chip viewfinder
Video data interface - CCP
Command interface - CCI
2,8/1,8 V operation
On board 11 bit ADC
Automatic exposure control (AEC)
Automatic white balance (AWB)
Small physical size
Ultra low power standby mode
On board PLL
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Specifications
Table 8: Camera specification
Feature Description
Resolution 480 x 640 pixels
Size 10,6 x 8,7 x 5,8 mm
Sensor technology 0,35
Pixel size 5,6 x 5,6
µm HCMOS6i
µm
Signal to noise 35 dB @ 100 lux
Minimum illumination < 10 lux
Lens f# 2.8 Fixed focus
Power supply 1,7 – 1,9 V Digital
2,7 – 2,9 V Analogue
To relax the processing requirements of the UPP ASIC, a separate hardware accelerator de­vice is incorporated in the phone system, to run the algorithms in hardware. The HWA performs all tasks to deliver both stills and viewfinder to the baseband with no further processing re­quired.
Figure 9: Camera module with HW accelerator
CAMERA
CCP
CCI
HWA
UIF
Phone
Baseband
1V8, 2V8, CLK & CE
CCP bus
CCP, also known as subLVDS, is a differential current mode bus. A CCP connection consists of 2 pairs of differential signals, data and clock, which are routed as 100 Ohm transmission lines and terminated in 100 Ohm at the receiver end.
The CCP is unidirectional and outputs image data only. The data rate is about 117MHz what­ever the image size or format.
CCI bus
CCI is an I2C-type bus used as the command interface in CCP/CCI systems. The HWA has a CCI bus master for communicating with the sensor.
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UIF bus
UIF is a slow (6,5 MHz) bus which may be shared with other UI functions (e.g. LCD). This ver­sion has unidirectional TX and Rx data lines and consists of a chip enable, chip select, Tx data, Rx data, data clock and system clock.
Clocks
The cameras and HWA can use 19.44MHz, 19.2MHz, 16.8MHz and 13MHz clocks in CCP/CCI mode. The cameras can also use the half-frequencies. The HWA can use 16.8MHz, 13MHz,
9.72MHz, 9.6 MHz and 8.4MHz clocks for UIF mode. The clock input for any of the devices can be DC or AC coupled. The camera and HWA is supplied from the same clock input.
Test possibility
Phoenix camera test
For troubleshooting see Camera faults in Baseband Troubleshooting Instructions.

Vibra

A vibra alerting device is used to generate a vibration signal for an incoming call. The vibra is located in the bottom end of the phone and connection is done with SMD. The vibra is control­led by a PWM signal from the UEMEK. The Frequency can be set to 64, 129, 258 or 520 Hz and duty cycle can vary between 3% and 97%.
Test possibility
Phoenix Vibra Test

LCD module

RM-17 has a 130 x 130 16 bpp (bits per pixel) active matrix color display. The number of colours is 64k, i.e. 16 bits. The LCD Interface is using serial 9-bit data transfer. The LCD display is con­nected to transceiver PWB by board-to-board connector.
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Characteristics
Table 9: LCD Characteristics
Active display area format 130 columns x 130 rows
UserInterface display area format 128 columns x 128 rows
Module size (width x height x thickness) 33,9 mm x 41.3 mm x 3.225 mm
Interface 9-bit serial
Illumination mode Transflective, Normally white
Number of LEDs 3 white LED
Numbers of colors supported by interface
Pixel height to width ratio 1:1
Viewing direction 6 o´clock
Refresh rate 55 Hz +- 10%
Full mode 65K 16-bit 5xR, 6xG, 5xB
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LCD connector
The TE signal is not used.
Table 10: LCD connector
Pin No:
1 Power supply OUT VLED- LED power supply cur-
2 Power supply
3 Ground - GND
4 Bidirectional
5 Chip select IN CSX Input voltage high 0.7 x
Description Type Symbol Parameter Min Typic al Max Unit
rent
IN VDDI Operating voltage 1.65 1.8 1.95 V
voltage
I/O SDA Input voltage high 0.7 x
serial data
Input voltage low 0 0.3 x
Output voltage high @ -
1.0 mA
Output voltage low @ -
1.0 mA
Input voltage low 0 0.3 x
VDDI
0.8 x VDDI
0 0.2 x
VDDI
15 mA
VDDI V
VDDI
VDDI
VDDI
VDDI V
VDDI
6 Ground - GND
7 TE output to syn-
chronise MCU to
frame writing
8 Reset IN RESX Input voltage high 0.7 x
9 Serial clock IN SCL Input voltage high 0.7 x
10 Ground - GND
11 Power supply
voltage
12 Power supply IN VLED+ LED power supply cur-
OUT TE Output voltage high @ -
1.0 mA
Output voltage low @ -
1.0 mA
Input voltage low 0 0.3 x
Input voltage low 0 0.3 x
IN VDD Operating voltage 2.6 2.75 2.9 V
rent
0.8 x VDDI
0 0.2 x
VDDI
VDDI
VDDI V
VDDI
VDDI V
VDDI
VDDI V
VDDI
15 mA
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Figure 10: LCD display
Connector type (Plug) Hirose DF23C-12DP-0.5V
6
1
127
Top view
1
12
Back view
Test possibility
Phoenix Display Test
For troubleshooting see Display faults in Baseband Troubleshooting Instructions.

Keypad

6
7
The RM-17 keys are connected to the UPP via the KEYB(10:0) bus. The keypad consists of a 5x4 matrix of 5 rows, ROW0 – ROW4, and 4 columns, COL1 – COL4.
Additionally, there are 3 lines that are directly connected to the UPP IO and can be detected independently. COL5 is connected to GENIO0.
Test possibility
Phoenix Keyboard Test
For troubleshooting, see Keypad faults in Baseband Troubleshooting Instructions.
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Figure 11: RM-17 keypad

Illumination

In RM-17, three white LED’s are used for LCD backlight and two red LED’s for keypad lightning. A step up DC-DC converter is used as a LED driver that is configured as a constant current source.
Test possibility
Phoenix LED test
For troubleshooting see Display faults in Baseband Troubleshooting Instructions.
SIM
The whole SIM interface locates in UPP and UEMEK.
The interface part in the UEMEK contains power up/down, port gating, card detect, data receiv­ing, ATR-counter, registers and level shifting buffers logic. The SIM interface is the electrical interface between the Subscriber Identity Module Card (SIM Card) and mobile phone (via UEMEK device).
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Both 3V and 1.8V SIM cards are supported. A register in the UEMEK selects SIM supply volt­age. It is only allowed to change the SIM supply voltage when the SIM IF is powered down.
SIM
Test possibility
Phoenix SIM Test
Figure 12: UPP/
SIM
ASIP
From battery
From battery
type contact
type contact
UEMEK SIM Interface Connections
SIMIO
SIMClk
SIMRst VSIM
BSI
UEME
SIMIO
SIMClk
SIMRst
SIMIF
register
UEME digital logic
UPP
SIMIO
SIMClk
SIMRst
UIF Block
UEMEInt
CBusDa CBusEnX
CBusClk
For troubleshooting, see SIM Card faults in Baseband Troubleshooting Instructions.

FM radio

RM-17 has a stereo FM radio. To provide this feature an FM radio chip, TEA5761, is used. It is a single chip electronically tuned FM stereo radio with fully integrated IF selectivity and de­modulation. The radio is completely adjustment free and does only require a minimum of small and low cost external components. The radio can tune European, US and Japan FM bands but in RM-17 only the European and US band (87.5Mhz … 108Mhz) is used.
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A
(
X
Nokia Customer Care 7 - System Module
Figure 13: FM radio with UPP/UEME
UPP UEMEK
GENIO 24
CBUSClk
CBUSDa
CBUSEn
SleepClk32K
INT
NT
MIC3PN
MIC3N
MIC3PR
Clk32k
CBUS / I²C
Busen
15.5mA max) VCCA
FM Radio
TEA5761
VCCD
VAFL
VAFR
1.8V
2.8V
VIO
VANA
MIC3P
Function
The communication between the FM radio and the phone is done using CBUS.
Headset is used as FM antenna.
The 32kHz sleep clock of UPP is used as reference clock for the FM radio.
The FM radio works also if the phone is in sleep mode. Therefore, the power supply (VANA), reference clock and audio loop of UEME are available during sleep if FM radio switched on.
Test Possibility
Phoenix "Testing – FM Control"
For troubleshooting, see FM radio faults in Baseband Troubleshooting Instructions.

IR Module

RM-17 has an IR module The IR link supports speeds from 9600 bit/s to 1.152 MBit/s up to a distance of 80 cm. Transmission over the IR if is half-duplex.
The IR transceiver can be set into SIR or MIR modes. In SIR mode the transceiver is capable of transmission speed up to 115.2kbit/s. In MIR mode faster transmission speeds are used. The
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V
V
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maximum speed is 1.152Mbit/s. The IR transceiver can be set into shutdown mode by setting SD pin to logic ’1’ for current saving reasons.
Figure 14: IR interface
UPP
IRRx
GENIO10
IACCDIF(1)
IACCDIF(0)
GENIO(10)
IR
RXD
RXD TXD
SD
SD
LEDA
IO
LOGIC
FLASH1
CC
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Interfaces

BB-RF interface

The interface between the Baseband and RF can be divided into three categories:
The digital interface from UPP to the RF ASIC (Helgo). The serial digital interface is used to control the operation of different blocks in the RF ASICs
The analogue interface between Baseband and RF. The analogue interface con­sists of Tx and Rx converter signals. The power amplifier control signals TXC and AFC also come from the UEMEK.
Reference clock interface between Helgo and UPP which supplies the 26 MHz system clock for UPP.

System connector interface

System connector
The system connector is a galvanic interface between phone and accessory.
Four new functions are introduced with the PopPort IF; Accessory Control Interface (ACI), Pow­er Out; Stereo audio output and Universal Serial Bus (USB). Where by the USB functionality is not supported by this product (RM-17). The RM-17 product supports stereo on the earpiece lines. The MBUS function, (included in previous accessory interfaces) is not supported by this interface.
The connector is not backward compatible with DCT1, DCT2 and DCT3 accessory interfaces.
TM
Figure 15: PopPort
bottom connector (charger plug socket & PopPortTM system con-
nector)
1 2 14
Charge
Charge GND
Charge
Shielding GND
ACI
Charge GND
Vout
USB
Fbus SB D+ _RX / U
Vbus
Data GND
Fbus_Tx / USB D-
XMICP
XMICN
XEARN
XEARRN
XEARP
XEARRP
Shielding GND
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Table 11: System connector interface description
Pin # Signal Notes
1 VCHAR
2 GND Charge ground
3 ACI Insertion & removal detection /
Serial data bi-directional 1 kbit/s
4 Vout Power supply for external accessories
5 Not used in RM-17
6 FBUS_RX Serial data from accessory to phone /
115 kbit/s
7 FBUS_TX Serial data from phone to accessory /
115 kbit/s
8 GND Data ground
9 XMIC N Negative audio in signal
10 XMIC P Positive audio in signal
11 HSEAR N Negative audio out signal.
12 HSEAR P Positive audio out signal.
13 HSEAR RN Negative audio out signal.
14 HSEAR RP Positive audio out signal.
ACI
ACI (Accessory Control Interface) is a point-to-point, Master-Slave, bi-directional serial bus. ACI has three main features:
The identification of accessory type is provided
The insertion and removal detection of an accessory device
Acting as a data bus, intended mainly for control purposes.
FBUS
FBUS is an asynchronous data bus having separate TX and RX signals. Default bit rate of the bus is 115.2 Kbit/s. FBUS is mainly used for controlling the phone in the interface to PC via DKU-5.
VOUT
The VOUT pin delivers the power supply for PopPortTM accessories, which are using the ACI or FBUS. The voltage level is 2.78V / 70mA.
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DC plug
NMP standard 2- or 3-wire chargers are compatible with the charger IF. The IF does not support 3-wire charging control. Nevertheless, it is potential possible to use a 3-wire charger without PWM charging support. RM-17 uses a 3mm DC plug besides the PopPort
TM
IF.
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Component Placement Hints

When exchanging components, all components must be placed properly. There is an extra challenge when:
Components are manually placed
Lead free process is applicable (which is the case for all RM-17 devices)
Therefore, the following placement support and check possibilities have been implemented:
Figure 16: PWB overview
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Power switch (S2419)

The power switch placement has a direct influence to the phone usability and failure rates. Im­proper placement can cause difficulties to switch the phone on / off or increase the switch’s sen­sitivity when dropping the phone (peeling of the switch or its pads). For proper placement, the corner marks need to fit properly even after soldering to get proper functionality of the switch.
Guiding Pins
Guiding Pins
Corner Marks
Corner Marks

Helgo RF-chip (N7500)

There are also corner marks introduced in order to help checking the placement after rework. The placement shall be done with proper equipment. The corner marks indicate proper place­ment after the soldering process. If the component is not placed properly the re-work process must be repeated until the component fits properly.
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Camera socket (X1470)

There are also corner marks introduced in order to support placement and checking placement after rework process.

Hardware accelerator (D1470)

There are also corner marks introduced in order to enable checking placement after rework process.
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UEM (D2800)

There are also corner marks introduced in order to help checking placement after rework proc­ess.

Flash (D3000)

There are some corner marks introduced.

SIM card reader (X2700)

There are some corner marks introduced.

System connector (X2002)

There are also some marks introduced (bars) in order to help placing the system connector and checking placement after rework. The placement bars need to be visible (they can be partly hidden by the connector), but the connector must equally hide them in order to be parallel to the PWB. In addition, the connectors must meet their pads properly as well.
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UEM (D2200)

There are also corner marks introduced in order to help checking placement after rework.

Battery connector (X2000)

There are also some corner marks introduced in order to support placement of the connector and checking placement after rework.
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Label placement

Different countries require different labels. This guide explains where it is possible to place these labels.
In the figure below, there are numbered shaded areas (1 - 5) where labels can be placed. On the right hand side there are numbers and labels. The numbers refer to the place where the label is allowed to be placed.
The Taiwan-specific label is metalized and it is very critical to place it properly, so that the phone performance is not affected. For this reason it is allowed to place it on the named areas 2, 3 and 4, but not within the areas 1 and 5. The Chinese label, which is not metalized, has desig­nated area 1.
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RF Module Description

The RF module performs the necessary high frequency operations of the triple-band engine. Both the transmitter and receiver have been implemented by using a direct conversion archi­tecture, which means that the modulator and demodulator operate on the channel frequency. No intermediate frequencies are used for up- or down-conversion.
The core of the RF is an application-specific integrated circuit (RF ASIC), Helgo85. The other RF key components are:
An EDGE capable power amplifier module, which includes two amplifier chains, one for the low band (GSM900) and the other for both high bands (GSM1800 and GSM1900).
An antenna switch module, which contains filters and switches to combine the two TX-PA outputs and three Rx chain inputs to the antenna port.
26 MHz reference oscillator (VCTCXO).
3296-3980 MHz VCO.
Three SAW filters for Rx band filtering.
One SAW filter for the low band (GSM900) Tx path.
The control information for the RF is coming from the baseband section of the engine through a serial bus, referred later on as RFBus. This serial bus is used to pass the information on the frequency band, mode of operation, and synthesizer channel for the RF. In addition, exact tim­ing information and receiver gain settings are transferred through the RFBus.
Physically, the bus is located between the baseband ASIC called UPP and the RF ASIC. Using the information obtained from UPP, the RF ASIC controls itself to the required mode of opera­tion and further sends control signals to the antenna switch and the power amplifier modules.
In addition to the RFBus, there are still other interface signals for the power control loop and VCTCXO control and for the modulated waveforms (IQ signals).
The RF circuitry is located in two shielding chambers on one side of the 8 layer PWB containing the following key components: The Small Signal Chamber contains RF ASIC, reference oscil­lator (VCTCXO), VCO, and Rx/Tx SAW-filters (GSM900/GSM1800). The Large Signal Cham­ber contains the RF Power Amplifier, the Antenna Switch Module, and the Rx SAW-filter and LNA (GSM1900).
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General specifications of the transceiver

Parameter Unit
Cellular System GSM900, GSM1800, GSM1900
Modulation schemes GMSK, 8-PSK
RX Frequency Band GSM900: 925 … 960 MHz
GSM1800: 1805 ... 1880 MHz GSM1900: 1930 … 1990 MHz
TX Frequency Band GSM900: 880 … 915 MHz
GSM1800: 1710 ... 1785 MHz GSM1900: 1850 … 1910 MHz
Output Power GMSK GSM900: +5 … +33 dBm (3.2 mW … 2 W)
GSM1800: +0 … +30 dBm (1.0 mW … 1 W) GSM1900: +0 … +30 dBm (1.0 mW … 1 W)
Output Power 8-PSK GSM900: +5 … 27 dBm (3.2 mW … 0.5 W)
GSM1800: +0 … 26 dBm (1.0 mW … 0.4 W) GSM1900: +0 … 26 dBm (1.0 mW … 0.4 W)
Duplex Spacing GSM 900: 45 MHz
GSM 1800: 95 MHz GSM 1900: 80 MHz
Number of RF Channels GSM 900: 174
GSM 1800: 374 GSM1900: 299
Channel Spacing 200 kHz (each band)
Number of TX Power Levels GMSK
Number of TX Power Levels 8-PSK
Sensitivity, static channel (+25°C)
GSM 900: 15 GSM 1800: 16 GSM 1900: 16
GSM 900: 12 GSM 1800: 14 GSM 1900: 14
GSM 900: -102 dBm GSM 1800: -102 dBm GSM 1900: -102 dBm
Frequency Error, static channel < 0.1 ppm
RMS Phase Error < 5.0 °
Peak Phase Error < 20.0 °
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Frequency concept

The RF frequency plan is shown below. The VCO operates at the channel frequency multiplied by two or four depending on the frequency band of operation. This means that the modulated signals from baseband are directly converted up to the transmission frequency and the re­ceived RF signals directly down to the baseband frequency.
Figure 17: RF frequency plan
Helgo
SM900: 925-960 MHz
SM1800: 1805-1880 MHz
SM1900: 1930-1990 MHz
I-signal
Q-signal
RX
f/2
f/2
f
3296­3980 MHz
f
PLL
AFC
26 MHz VCTCXO
Buffer
VCTCXO 26 MHz
I-signal
Q-signal
TX
f/4
f
f
f/4
SM1800: 1710-1785 MHz
SM1900: 1850-1910 MHz
SM850: 824-849 MHz SM900: 880-915 MHz

RF power supply configuration

All power supplies for the RF unit are generated in the UEM ASIC, which contains among other functions six pieces of 2.78 V linear regulators (VR2 ... VR7), a 4.8 V switching regulator (VR1) and two 1.35V voltage references (VrefRF01 and VrefRF02).
The regulators are connected to the RF ASIC, except for VR7, which supplies the VCO. The
4.8V supply is required for the charge pump of the PLL to generate the tuning voltage for the VCO.
The reference voltages are used as bias reference for the RF ASIC for the RX ADC (analog­to-digital converter) reference.
All RF supplies can be checked either in Small Signal Chamber or in BB Chamber.
The used power supply configuration is shown in the block diagram below. Values of voltages are given as nominal outputs of UEM. Currents are typical values.
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Figure 18: RF power distribution diagram
UEM
VR1
VR2
VR3
VR4
VR5
VR6
4.75 V [ 4.6V ... 4.9V ]
2.78 V [ 2.70V ... 2.86V ]
2.78 V [ 2.70V ... 2.86V ]
2.78 V [ 2.70V ... 2.86V ]
2.78 V [ 2.70V ... 2.86V ]
2.78 V [ 2.70V ... 2.86V ]
charge pump (VCP)
Tx modulator (Vcc_ModOut)
TX buffer & EDGE ALCs (VRF_TX)
VCTCXO (+VCC)
digital interface (VDIG)
Rx Front End (VRF_RX)
Bias & Rx CH filters (VF_RX)
RF controls (VPAB_VLNA)
PLL prescaler (VPRE)
phasing dividers of Rx (VLO)
BB buffer (VDIG)
VR7
V
refRF01
V
refRF02
VBAT

RF block diagram

RF block diagram consists of:
Antenna switch module
Power amplifier module
RF ASIC
VCTCXO module
VCO module
2.78 V [ 2.70V ... 2.86V ]
16 mA [max. 20 mA]
1.35 V [ 1.32V ... 1.38V ]
100 uA
1.35 V [ 1.32V ... 1.38V ]
100 uA
3.7 V [ 2.95V ... 4.7V ]
VCO (VCC_VCO)
bias reference (VB_EXT)
bias reference
Triple band PA
(RXIINN, RXQINN)
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Figure 19: RF block diagram
RF Fron t-en d Modul e
HB BP
LC
LB LP
LC
Edge capabl e PA Module
1900 Rx
SAW
ESD
FILTER
900 Tx
1900 Tx
LC
LC
CTRL inputs
VBAT
800/900
internal
Det.
matchi ng
1800/1900
internal
Det.
matchi ng
Vtxb 850/900Iref 850/900Iref 1 800/1 900Vdetect 850/900Vdetec t 1800 /1900 Vpctr l 850/ 900Vpctrl 1800/ 1900 Vmode
3dB att
3dB att
Vtxb 1800/1900
Balun
LNAB_P
LNA_P
1800 Rx
SAW
900 Rx
SAW
EGSM
Pull-up
Network
900 Tx
EGSM
VBB
VLO
VPRE
VRF_RX
VF_RX
VPAB_VLNA
VDIG
VRF_TX
VCP
VRF_TX,VBB,VLO,VTX
Analog AGC
SAW
Analog AGC
Balun
VR6
VR5
VR4
VR3
VR2
VR1
VRF_RXVLNA
VF_RX
INTEGRATED
LOW-PASS FILTERS
AND AGC FUNCTION
BUILT-IN DC COMP.
Digital AGC
Digital AGC
Digital AGC
Digital AGC
VLO
Divide
by 2/4
1k2
s7
s3
VBB
2.7V
10mA GPIO
VBB
VDIG
VPRE,VDIG,VCP
Bi-directional
Serial
Interfa ce
VDIG
VDIG
temp
sensor
PLL
Divide
by two
Balun
VR3
VCTCXO Module
RXIP
RXQP
RFTEMP
VR7
2 dB
Att
VCO Module
RESET
SLE
SCLK
SDATA
TXIP
TXIM
TXQP
TXQM
AFC D/A
REFCLK
TXA
8-PSK Feed-back
GMSK Feed-back
VBB, GND_BB
s6
PCTRL en able
s1
s5
s2
VDIG
VB_ext
bias
RB_ext
gen
R_ref
PA Detect
detector
feedback network
Helgo
10/40mA GPIO
VPAB,VBB
2.7V
Helgo
A detailed functional description is given in the following sections.

Antenna switch (TX/RX switch)

The antenna switch operates as a diplexer for the RX and TX signals. The antenna switch is controlled by the RF ASIC using the control signals VANT1, VANT2 and VANT3.
The table below shows the possible different switching states.
TXP
TXC
V_ref_RF01
PA ID
Iref 850/900
Iref 18 00/1 900
MODE
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VANT_2
VC1
[Volt]
VANT_3
VC2
[Volt]
VANT_1
VC3
[Volt]
Rx1
GSM
900
Rx
Rx2
GSM
1800
Rx
Rx3
GSM
1900
Rx
Tx1
GSM
900
Tx
Tx2
GSM
1800/1900
Tx
000X
000 X
02.62.6 X
02.60 X
2.6 2.6 0 X
To switch the TX-GSM 1800/1900 path both signals VANT2 and VANT3 have to be activated.
Receiver
Each receiver path is a direct conversion linear receiver. From the antenna, the received RF signal is fed to the antenna switch module where a diplexer first divides the signal to two sep­arate paths for the low band and the two high bands. Then the paths are passing the Rx/Tx switches and the high band signal passes an additional GSM1800/1900 switch. As output of the module three separate Rx connections are available.
These signals are fed to the SAW band filters, which let only the frequencies of the wanted band pass on to the low noise amplifiers. The GSM1900 LNA is an external component, the other two LNAs are integrated in the RF ASIC.
The received signal is down converted in the demodulator mixers and amplified in the AGC gain stage to an appropriate baseband level and passed on as I and Q signal to the A/D con­verter in UEM for further digital signal processing.
Transmitter
The transmitter consists of two final frequency IQ-modulators and a power amplifier module with separate paths for the lower band and the upper bands, and a power control loop. The IQ­modulators are integrated in the RF ASIC, as well as the operational amplifiers of the power control loop.
The power amplifier module contains power detectors. In GMSK mode, the power is controlled by adjusting the DC bias levels of the power amplifiers. In EDGE mode, the power is controlled by adjusting ALC in Helgo RFIC.
Frequency synthesizer
One PLL synthesizer generates all the required frequencies of the three bands for Rx and Tx operation. The VCO frequency is divided by 2 or by 4 in the RF ASIC depending on the active band. This allows the generation of all the frequencies in the GSM900, GSM1800 and GSM1900 bands, both RX and TX range. The frequency synthesizer is integrated in the RF ASIC (Helgo) except for the VCTCXO, VCO, and the loop filter.
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The VCTCXO (Voltage Controlled Temperature Compensated Crystal Oscillator) generates the clock frequency of 26 MHz. This frequency is buffered in the RF ASIC and fed to the UPP. Ad­ditionally, it is used as the reference frequency for the RF PLL. The frequency of the VCTCXO is locked into the frequency of the base station with the help of an AFC voltage which is gener­ated in the UEM by an 11 bit D/A converter.
The PLL (phase locked loop) locks the VCO frequency into a stable frequency source, given by the VCTCXO. The PLL is located in the RF ASIC and is controlled through the RFBus.
The loop filter generates a DC control voltage for the VCO from the charge pump pulses of the phase detector. The loop filter determines the step response of the PLL (settling time) and con­tributes to the stability of the loop.

Signal paths

Receiver signal paths
VRF_RXVLNA
VBB
2.7V
10mA
GPIO
VLO
Divide
by 2/4
Rx part of RF ASIC
VF_RX
INTEGRATED
LOW-PASS FILTERS
AND AGC FUNCTION
BUILT-IN DC COMP.
Bi-directional
Interface
VDIG
VBB
Serial
HB BP
LC
LB LP
LC
Antenna Switch Module
CTRL inputs
1900 Tx
1900 Rx
SAW
ESD
FILTER
900 Tx
LC
LC
Balun
LNAB_P
LNA_P
1800 Rx
SAW
900 Rx
SAW
VR6
VR5
VR4
VR3
VR2
VR1
VBB
VLO
VPRE
VRF_RX
VF_RX
VPAB_VLNA
VDIG
VRF_TX
VCP
VRF_TX,VBB,VLO,VTX
Rx part of RF ASIC
From the antenna-pad, the RF signal is fed directly to the antenna switch module. Depending on the control signals VC1, VC2, VC3, the antenna port is connected to one of the Rx ports RX1, RX2, RX3. From these ports the signal is passed on to the band filters:
GSM 900: RX1-> GSM900 SAW filter
GSM1800: RX2 -> GSM1800 SAW filter
RXIP
RXQP
RESET
SLE
SCLK
SDATA
VR7
2 dB
Balun
Att
VCO Module
GSM1900: RX3 -> GSM1900 SAW filter
The antenna switch has the following typical insertion losses in the Rx mode from its input to output ports:
GSM 900: 1.3 dB
GSM 1800: 1.6 dB
GSM 1900: 1.6 dB
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The SAW filters provide the wanted out-of-band blocking immunity. The SAW filters have ap­proximately 2.5 to 3 dB insertion loss.
The GSM 900 and the GSM 1800 filters are matched to the corresponding LNA inputs of the RF ASIC with a differential matching network (LC-type).
For GSM 1900 an external LNA improves the noise figure of the receiver. The external LNA provides a gain of approximately 17 dB. For conversion of the unbalanced output port to the balances input port of the RF ASIC a balun is applied, followed by a differential matching net­work (LC-type).
After amplification in the RF ASIC, the RX signals are down-converted to the baseband I and Q signals and further amplified by the AGC stages. This signal is passed on to the analog-to­digital converters in UEM.
The RX paths of the RF ASIC consist of the following sub units:
Separate LNAs for each of the bands: GSM900, and GSM1800.
Two PRE-GAIN amplifiers, one for GSM900 and one common for GSM1800 and GSM1900.
Two passive I/Q mixers (MIX), one for GSM900 and one common for GSM1800 and GSM1900.
The BB signal paths consist of:
rd
Integrated BB channel select filter, 3 paths for I and Q-channel. Each channel consists of 2 stages, 1
st
single-ended converter with 1
order RC filter, 2nd stage is an active RC modified
order tunable active RC-type with equal
st
stage (DTOS) is a
Sallen-Key biquad.
Automatic gain control (AGC): DTOS has two gain stages producing a 6 dB or 18 dB gain.
Attenuators in AGC-path.
DC compensation / AGC amplifiers.
The differential base band amplifiers are internally DC-coupled. Their common mode levels are set equal to the external reference voltage VrefRF01. The base band outputs RXIP and RXQP are single-ended and connected directly to the differential ADC inputs (RX I-> RXIINP and RXQ
-> RXQINP) of the UEM-ASIC. Its common mode level is set equal to the external reference voltage VrefRF02.
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Transmitter signal paths
RF Fr ont-en d Modu le
HB BP
LC
LB LP
LC
Edge capable PA Module
VBB
2.7V
10mA GPIO
VRF_TX,VBB,VLO,VTX
VRF_RXVLNA
Digital AGC
Digital AGC
Digital AGC
Digital AGC
VF_RX
INTEGRATED
LOW-PASS FILTERS
AND AGC FUNCTION
BUILT-IN DC COMP.
VLO
Divide
by 2/4
1k2
s7
s3
VBB
VDIG
VPRE,VDIG,VCP
Bi-directional
Serial
Interface
VDIG
temp
sensor
PLL
VDIG
Divide
by two
Balun
VR3
VCTCXO Module
RXIP
RXQP
RFTEMP
VR7
2 dB
Att
VCO Module
RESET
SLE
SCLK
SDATA
TXIP
TXIM
TXQP
TXQM
AFC D/A
REFCLK
TXA
1900 Rx
SAW
ESD
FILTER
900 Tx
1900 Tx
LC
CTRL inputs
800/900
internal
Det.
matchi ng
1800/1900
internal
Det.
matchi ng
LC
VBAT
3dB att
3dB att
Vtxb 850/900Iref 850/900Iref 1800/1900Vdetect 850/900Vdetect 1800/1900 Vpctrl 850/900Vpctr l 1800/19 00 Vmod e
Vtxb 1800/1900
Balun
LNAB_P
LNA_P
1800 Rx
SAW
900 Rx
SAW
EGSM
Network
VBB
VLO
VPRE
VRF_RX
VF_RX
VPAB_VLNA
VDIG
VRF_TX
VCP
Pull-up
Analog AGC
900 Tx
SAW
EGSM
Analog AGC
Balun
VR6
VR5
VR4
VR3
VR2
VR1
8-PSK Feed-back
GMSK Feed-back
VBB, GND_BB
s6
PCTRL enable
s1
s5
s2
VDIG
VB_ext
bias
RB_ext
gen
R_ref
PA Detect
detector
feedback
network
2.7V
10/40mA
GPIO
VPAB,VBB
Helgo
Helgo
The baseband I and Q signals, coming from UEM, are mixed up to the transmitting frequency in the RF ASIC.
The low band signal passes a SAW band filter. The SAW filter converts the balanced output signal of the RF ASIC to a single-ended signal for the power amplifier input.
The high band signal passes a balun to convert it to a single-ended signal.
Both paths are connected to the power amplifier module via a 1dB attenuator. This module gen­erates the required RF level to transmit a 2W signal in the low band and a 1W signal in the two high bands. It contains two separate amplifiers for low band and high band.
The output signals of the PA module are fed to the antenna switch module, where the active signal is connected to the antenna port.
TXP
TXC
V_ref_RF01
PA ID
Iref 850/900
Iref 1 800/1 900
MODE
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In GMSK mode, the output signal of the RF ASIC has constant level as the ALC amplifiers are set to constant gain. The different power levels are generated by the gain variation of the power amplifier.
In EDGE mode, the ALC amplifiers generate the different power levels and the PA is set to con­stant gain.
Frequency synthesizer signals
The reference oscillator is implemented as Voltage Controlled Temperature Compensated Crystal Oscillator (VCTCXO) module. The component is located in the Small Signal chamber. The VCTCXO generates the clock frequency of 26 MHz.
The reference oscillator has two functions:
Reference frequency for the PLL synthesizer.
System clock for baseband part. The frequency is buffered in the RF ASIC and fed to the UPP (signal VCTCXO = 26 MHz, output REFOUT of the RF ASIC).
The frequency of the VCTCXO is locked into the frequency of the base station with the help of the AFC signal. This AFC voltage is generated in the UEM by an 11 bit D/A converter and tunes the oscillator.
The AFC voltage is calculated using the values “AFC value” and “AFC slope”, which are deter­mined during Rx calibration of the low band.
The VCO is able to generate frequencies in the range of 3296MHz to 3980MHz. The actual frequency is controlled by a PLL (Phase locked loop) circuit, which compares the VCO frequen­cy to the reference frequency from the VCTCXO. The charge pump of the PLL generates pulse to charge/discharge the capacitors in the loop filter. The output voltage of this filter tunes the frequency of the VCO.
The valid range of Vc is 0.7V– 3.8V when the PLL is in steady state. The typical tuning sensi­tivity is 250MHz/V.
52 COMPANY CONFIDENTIAL ISSUE 1 09/2004
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Printed Wiring Board

Figure 20: Assembled PWB with shielding chambers
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RF key component placement

Figure 21: Placement of RF key components
900
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List of RF key components:
Position Component Name Supplier and Description Code
Z7800 Antenna Switch Module
1) Hitachi Metals, M090QV 455B084*
ASM
2), 3) Murata, SPq* DA269
4550305 *q means date code which will change
Z7802 SAW1800 RX 1) FMD, B2CC 4511499
2), 3) Murata,
SAFEKG84MFC0F04
4511457
Z7801 SAW1900 RX 1) Epcos, LF55F 4511503
2), 3) Murata,
SAFEJ1G96KB0F04
N7500 RF ASIC (Helgo 8.5) 1), 2), 3) ST Microelectron-
4511459
4371005 ics
V7800 LNA 1900 RX 1), 2), 3) Infineon 4210261
G7501 VCTCXO 1) Kyocera, KT20a 4510447
2), 3) NDK 4510417
G7500 VCO 1) Matsushita,
4350007 ENFVK3W2F07
2), 3) FDK, WB002G 4350459
N7700 TX-PA 1) Renesas, PF09015B 435B129*
2), 3) RFMD, PA RF9250 4355641
Z7803 SAW900 RX 1) Epcos, LL73B 4511507
2), 3) Murata,
SAFEK942MFL0F04
4511455
Z7700 SAW900 TX 1) FMD, B29JP 4511493
2), 3) Murata,
SAFEK897MFM0F04
4511443
Assembly variants: Components assembled on one and the same board are marked with 1) respectively 2) or 3) for variant BOM 1 respectively for variants BOM2 or BOM2b.
Nokia codes for components without full code numbers are marked with *, the codes will be replaced with the corresponding numbers as soon as available.
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