Nokia 6340i Service Manual 3 rh 13 sys
CCS Technical Documentation
RH-13 Series Transceivers
System Module
Issue 1 11/02 ãNokia Corporation
RH-13
System Module CCS Technical Documentation
Contents
Page No
Abbreviations................................................................................................................. 5
Transceiver RH-13......................................................................................................... 7
Introduction ..................................................................................................................7
Engine Module WG8 ..................................................................................................... 8
Introduction ..................................................................................................................8
UEM ............................................................................................................................8
UEM introduction ..................................................................................................... 8
Blocks........................................................................................................................ 9
RF IF ....................................................................................................................... 10
Charging Control..................................................................................................... 10
DIGITAL IF............................................................................................................ 11
AUDIO CODEC ..................................................................................................... 11
UI DRIVERS........................................................................................................... 11
IR interface.............................................................................................................. 11
AD CONVERTERS................................................................................................ 11
SIM.......................................................................................................................... 11
Technical information ............................................................................................. 11
UPP ............................................................................................................................12
Introduction............................................................................................................. 12
Blocks...................................................................................................................... 12
Technical information ............................................................................................. 12
Flash memory ............................................................................................................12
Introduction............................................................................................................. 12
Technical information ............................................................................................. 12
UIHW ........................................................................................................................13
LCD......................................................................................................................... 13
Audio HW ..................................................................................................................17
Earpiece................................................................................................................... 17
Microphone ............................................................................................................. 18
Buzzer...................................................................................................................... 18
Battery ........................................................................................................................19
Phone battery........................................................................................................... 19
Battery connector .................................................................................................... 20
Accessories Interface .................................................................................................20
System connector .................................................................................................... 20
IR module................................................................................................................ 21
Charger IF ............................................................................................................... 22
Data cable................................................................................................................ 23
Test interfaces ............................................................................................................23
Production test pattern............................................................................................. 23
Other test points ...................................................................................................... 24
EMC ...........................................................................................................................24
General .................................................................................................................... 24
BB component and control/IO line protection........................................................ 25
Transceiver interfaces ................................................................................................27
BB - RF Interface Connections ..................................................................................27
BB Internal connections ............................................................................................30
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UPP Block signals................................................................................................... 36
MEMORY Block Interfaces.................................................................................... 41
IR Block Interfaces.................................................................................................. 42
SIM Block Interfaces .............................................................................................. 42
Audio Interfaces ...................................................................................................... 43
Key/Display blocks ................................................................................................. 45
Baseband External Connections ................................................................................46
Test Pattern for production tests.............................................................................. 48
General about testing .................................................................................................48
RF Module ................................................................................................................... 50
Introduction ................................................................................................................50
Requirements........................................................................................................... 50
Design...................................................................................................................... 50
Interfaces ....................................................................................................................50
Environmental Specifications ....................................................................................51
Temperature Conditions.......................................................................................... 51
Vibration and Free Fall ........................................................................................... 51
Humidity and Water Resistance.............................................................................. 52
ESD strength ........................................................................................................... 52
Main Technical Specifications ..................................................................................52
RF frequency plan ................................................................................................... 52
DC Characteristics................................................................................................... 54
Functional Description ...............................................................................................55
Block diagram ......................................................................................................... 55
Receiver................................................................................................................... 56
Frequency Synthesizers........................................................................................... 57
Transmitter.............................................................................................................. 57
Software Compensations......................................................................................... 58
RF Characteristics ......................................................................................................59
Receiver................................................................................................................... 60
Transmitter.............................................................................................................. 61
Synthesizers............................................................................................................. 62
Antenna ................................................................................................................... 63
EMC........................................................................................................................ 63
Radiated spurious emissions, Receiver................................................................... 63
Conducted spurious emissions, Receiver................................................................ 63
Harmonic and spurious emissions, Transmitter, conducted and radiated............... 64
Maintainability ...........................................................................................................64
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List of Figures
Fig 1 RH-13 Block Diagram................................................................................................7
Fig 2 System Block Diagram...............................................................................................8
Fig 3 LCD interface ............................................................................................................13
Fig 4 Placement of keys.......................................................................................................14
Fig 5 SIM block...................................................................................................................17
Fig 6 Battery connection diagram........................................................................................19
Fig 7 BLB-3 Battery contacts (BLB-2 has the same interface)...........................................20
Fig 8 System connector........................................................................................................21
Fig 9 IR interface .................................................................................................................22
Fig 10 Top view of production test pattern..........................................................................24
Fig 11 Telescoping pattern between UPP and UEM ..........................................................24
Fig 12 Transceiver block naming for interfaces ..................................................................27
Fig 13 RH-13 Frequency Plan .............................................................................................53
Fig 14 Power Distribution Diagram.....................................................................................54
Fig 15 Block diagram of the RH-13 RF module ................................................................56
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Abbreviations
ADC Analog to Digital Converter
ASIC Application Specific Integrated Circuit
BB Baseband
COG Chip On Glass
ENGINE The Transceiver parts fixed to PWB
FBUS Fast asynchronous serial bus
FDL Flash Down Loading, programming the phone FLASH memory
GSM Global system for mobile communications (Groupe Spêcial Mobile)
HW Hardware
I & Q In phase and Quadrature components of complex signal
IR Infrared. A wireless data/audio transmit medium.
IrDA Infrared Data Association
JTAG An in-circuit test method, based on the standard IEEE-1149.1
LDO Low Drop Out
LED Light Emitting Diode
Low Iq mode Low quiescent current mode
MBUS A bidirectional serial bus
NTC Negative Temperature Coefficient.
PWB Printed Wiring Board
PCM Pulse Code Modulation
PDM Pulse Density Modulation
PWM Pulse Width Modulation
RF Radio Frequency
Rx Receiver path
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SIM Subscriber Identity Module
SW Software
TDMA Time Division Multiple Access
Transceiver Transmitter & Receiver, mobile phone
Tx Transmitter path
UEM Universal Energy Management baseband ASIC.
UI User Interface
UPP Universal Phone Processor baseband ASIC.
US United States (of America)
US-AMPS Analog Mobile Phone System used in United States
US-DAMPS Digital AMPS, used in US, channel compatible with AMPS
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Transceiver RH-13
Introduction
The RH-13 is a dual band radio transceiver unit for GAIT (AMPS/TDMA800/GSM850/
TDMA1900/GSM1900) networks. It is a true 3 V transceiver with an internal antenna and
a vibra.
Mechanical construction resembles Nokia 61XX series and the same accessories can be
used. External RF connector is included.
An integrated Infrared link is located on the top of the phone.
RH-13 has the connection for the small SIM (Subscribe Identity Module) card.
The PWB has one-sided SMD and there is no separate User Interface PWB but the keyboard connections are on the non-SMD side of the board.
EXT RF
ANT
Test I/F
Ostrich
SIM
Figure 1: RH-13 Block Diagram
LCD DRIVER
✉
Display
Backlight/
Frontlight
System Module W G8
RF
800/1900 MHz
SAFARI_GTE
BB
UEM
RF Converters
Audio
Energy Managem ent
UPP8M
MCU:ARM7
DSP: LEAD3
System Logic
1
1AG
TRANSCEIVER
USER INTERFACE
☎
6
9
0#
EARP
HEADSET
MIC
BUZZER
VIBRA
BATTERY
BTemp
INFRA RED
Ext. Mem ory
~
~
~
~
SYSTEM
CONNECTOR
Flash-ROM 64 Mbit
CHARGING
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System Module CCS Technical Documentation
Engine Module 1AG
Introduction
This section describes the baseband part of the RH-13 transceiver.
The BB architecture is similar to the earlier BB generation. The major difference is the
integration level. Core BB consists of 2 ASICs and flash memory.
BB core technical specification
The core part of RH-13 BB (figure below) consist of 2 ASICs, UEM and UPP, and flash
memory. Following sections describe these parts.
Figure 2: System Block Diagram
PA supply
SAFARI GTE
RFIC CTRL
RFCLK
19.44 / 13 MHz
UPP
MEMADDA
MEMCONT
FLASH
RF Supplies
RF RX/TX
PURX
RF RX/TX
SLEEPCLOCK
32kHz
CBUS/DBUS
AUDIO
BB Supplies
KLIGHT/DLIGHT
PWR ON
BASEBAND
BATTER
UEM
IR
EAR
MIC
BUZZER
IBRA
EXTERNAL AUDIO
CHARGER CONNECTION
MBUS AND FBUS
System Connector
UI
UEM
UEM introduction
UEM is the Universal Energy Management IC for digital handportable phones. In addition
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to energy management it performs all the baseband mixed-signal functions.
Most of UEM pins have 2kV ESD protection and those signals, which are considered to be
exposed more easily to ESD, have 8kV protection inside UEM. Such signals are all audio
signals, headset signals, BSI, Btemp, Fbus and Mbus signals.
Blocks
REGULATORS
UEM has 6 regulators for BB power supplies and 7 regulators for RF power supplies. VR1
regulator has 2 outputs VR1a and VR1b. In addition there are 2 current generators IPA1
and IPA2 for biasing purposes.
Bypass capacitor (1uF) is required for each regulator output to ensure stability.
Reference voltages for regulators require external 1uF capacitors. Vref25RF is reference
voltage for VR2 regulator, Vref25BB is reference voltage for VANA, VFLASH1, VFLASH2,
VR1 regulators, Vref278 is reference voltage for VR3, VR4, VR5, VR6, VR7 regulators,
VrefRF01 is reference voltage for VIO, VCORE, VSIM regulators and for RF.
Table 1: UEM Regulators
BB RF Current
VANA: 2.78Vtyp 80mAmax VR1a:4.75V 10mAmax
VR1b:4.75V
Vflash1: 2.78Vtyp 70mAmax IPA2: 0-5mA
Vflash2: 2.78Vtyp
40mAmax
VSim: 1.8/3.0V 25mAmax VR3:2.78V 20mA
VIO: 1.8Vtyp
150mAmax
Vcore: 1.0-1.8V
200mAmax
VR2:2.78V 100mAmax
VR4: 2.78V 50mAmax
VR5: 2.78V 50mAmax
VR6: 2.78V 50mAmax
VR7: 2.78V 45mAmax
IPA1: 0-5mA
VANA regulator supplies internal and external analog circuitry of BB. It is disabled in
sleep mode.
Vflash1 regulator supplies LCD, IR-module and digital parts of UEM and Safari_GTE asic.
It is enabled during startup and goes to low Iq-mode in sleep mode.
Vflash2 regulator supplies data cable (DLR-3). It's enabled/disenabled through writing
register and default is off.
VIO regulator supplies both external and internal logic circuitries. It is used by LCD, flash
and UPP. Regulator goes in low Iq-mode in sleep mode.
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VCORE regulator supplies DSP and Core part of UPP. Voltage is programmable and startup default is 1.5V. Regulator goes to low Iq-mode in sleep mode.
VSIM regulator supplies SIM card. Voltage is programmable. Regulator goes in to low Iqmode in sleep mode.
VR1 regulator uses two LDOs and a charge pump. Charge pump requires one external 1uF
capacitor in Vpump pin and 220nF flying capacitor between pins CCP and CCN. VR1 regulator is used by Safari_GTE RF ASIC.
VR2 regulator is used to supply external RF parts, lower band up converter, TX power
detector module and Safari_GTE. In light load situations VR2 regulator can be set to low
Iq-mode.
VR3 regulator supplies VCTCXO and Safari_GTE in RF. It's enabled always when UEM is
active. When UEM is in sleep mode VR3 is disabled.
RF IF
VR4 regulator supplies RF parts having low noise requirements. In light load situations
VR4 regulator can be set to low Iq-mode.
VR5 regulator supplies lower band PA. In light load situations VR5 regulator can be set to
low Iq-mode.
VR6 regulator supplies higher band PA and TX amplifier. In light load situations VR6 regulator can be set to low Iq-mode.
VR7 regulator supplies UHF VCO and Safari_GTE. In light load situations VR7 regulator
can be set to low Iq-mode.
IPA1 and IPA2 are programmable current generators. 27kΩ/1%/100ppm external resistor
is used to improve the accuracy of output current. IPA1 is used by lower band PA and
IPA2 is used by higher band PA.
The interface between the baseband and the RF section is handled also by UEM. It provides A/D and D/A conversion of the in-phase and quadrature receive and transmit signal
paths and also A/D and D/A conversions of received and transmitted audio signals to and
from the UI section. The UEM supplies the analog AFC signal to RF section according to
the UPP DSP digital control.
Charging Control
The CHACON block of UEM ASIC controls charging. Needed functions for charging controls are pwm-controlled battery charging switch, charger-monitoring circuitry, battery
voltage monitoring circuitry and RTC supply circuitry for backup battery charging (Not
used in RH-13). In addition external components are needed for EMC protection of the
charger input to the baseband module.
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DIGITAL IF
Data transmission between the UEM and the UPP is implemented using two serial connections, DBUS (programmable clock) for DSP and CBUS (1.0MHz GSM and 1.08MHz
TDMA) for MCU. UEM is a dual voltage circuit, the digital parts are running from 1.8V
and the analog parts are running from 2.78V.
AUDIO CODEC
The baseband supports two external microphone inputs and one external earphone output. The inputs can be taken from an internal microphone, a headset microphone or from
an external microphone signal source through headset connector. The output for the
internal earpiece is a dual ended type output, and the differential output is capable of
driving 4Vpp to earpiece with a 60 dB minimum signal to total distortion ratio. Input and
output signal source selection and gain control is performed inside the UEM Asic according to control messages from the UPP. A buzzer and an external vibra alert control signals are generated by the UEM with separate PWM outputs.
UI DRIVERS
UEM has dedicated single output drivers for buzzer, vibra, IR, display LEDs and keyboard
LEDs. These generate PWM square wave to devices.
IR interface
The IR interface is integrated to UEM and data transfer is done via TXD and RXD paths.
UEM supports data speeds up to 115.2kbit/s.
IR module integrates a sensitive receiver and a built-in power driver. IR module itself
supports speeds from 9.6kbit/s to 1.152Mbit/s. UEM supports speeds up to 115.2 kbit/s.
Vflash1 supplies IR module except transmit LED. Transmit LED is supplied from VBAT and
maximum current is limited by serial resistor. TXD and RXD lines are connected to UEM
and shutdown is controlled by UPP through level-shifter V350.
AD CONVERTERS
There is 11-channel analog to digital converter in UEM. Some channels of the AD converter aren't used in RH-13 (LS, KEYB1-2). The AD converters are calibrated in the production line
SIM
The SIM interface is the electrical interface between the Subscriber Identify Module Card
(SIM card) and mobile phone (via UEM device). The UEM device contains power up/down,
port gating, card detect, data receiving, ATR-counter, registers and level shifting buffers
logic for SIM.
Technical information
UEM package is 168-pin CSP package with 150 signal pins, 16 thermal pins and 2 kelvin
pins. Package size is 12mm x 12mm with max. thickness of 1.23mm. Solder ball diameter
is 0.4mm +-0.05mm and ball pitch is 0.8mm.
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UPP
Introduction
RH-13 uses UPPv8M ASIC. The RAM size is 8M. The processor architecture consists of
both DSP and MCU processors.
Blocks
UPP is internally partitioned into two main parts:
The Processor and Memory System (i.e. Processor cores, Mega-cells, internal memories,
peripherals and external memory interface) is known as the Brain.
Brain consists of the blocks: the DSP Subsystem (DSPSS), the MCU Subsystem (MCUSS),
the emulation control EMUCtl, the program/data RAM PDRAM and the Brain Peripherals–subsystem (BrainPer).
The NMP custom cellular logic functions. This is known as the Body.
Body contains all interfaces and functions needed for interfacing other baseband and RF
parts. Body consists of following sub-blocks: MFI, SCU, CTSI, RxModem, AccIF, UIF, Coder,
GPRSCip, BodyIF, SIMIF, PUP and CDMA (Corona).
Technical information
UPP package is 13x13-matrix CSP package with 144 signal pins. Package size is 12mm x
12mm with max. thickness of 1.40mm. Solder ball diameter is 0.5mm +-0.05mm and ball
pitch is 0.8mm.
Flash memory
Introduction
RH-13 uses 64 Mbit flash as an external memory. VIO is used as a power supply for normal in-system operation. An accelerated program/erase operation can be obtained by
supplying Vpp of 12 volt to flash device. Memory architecture consists of eight sectors of
8kB and 63 sectors of 64kB each.
The device has two read modes: asynchronous and burst. Burst mode read is utilized in
RH-13 except the start-up when asynchronous read is used for a short time.
In burst mode UPP supplies only the initial address and subsequent addresses are generated inside flash by the rising edge of Clock (FLSCLK in UPP). After acknowledging the
initial address the flash starts to deliver a continuous sequential data word stream. Data
stream continues until the end of the memory or until the user loads in a new starting
address or stops the burst in advance.
Technical information
Flash package is a CSP package with 40 signal pins and 4/8 support balls. Package max.
size is (WxLxH) 10,6mm x 11,0mm x 1.2mm. Solder ball diameter is 0.3mm and ball pitch
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is 0.5mm.
UIHW
LCD
Introduction
RH-13 uses black/white GD51 96*65 full dot matrix display with COG driver. One vendor
- SEIKO SED15B0 - is used in RH-13.
Interface
LCD data, clock, chip select and reset signals come from the UPP. The VIO voltage is supplied to a logic voltage pin and the FLASH1 voltage is used to supply power to the LCD.
The LCD uses extra filtering capacitors to filter voltages. The booster capacitor (C302
2u2F) is connected between the booster pin and the Vflash1. The capacitor stores the
boosting voltage.
Figure 3: LCD interface
Keyboard
Introduction
All signals for the keyboard come from the UPP through the emifilter (Z300). The side
key, which does not go through the emifilter, and the power key signal are connected
directly to the UEM. The pressing of the power key is detected so that the switch power
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123456789#0*Up
Down
End
Send
S Right
SLeft
System Module CCS Technical Documentation
key connects the PWONX of the UEM to the GND and creates an interruption. Side key
detection is achieved by connecting the line to the ground when pressing the side key
(volume up or down). The emifilter is the ESD and EMC protection.
The matrix-based keyboard interface consists of a scan column I/O data register and a
row of data register. In the keyboard scanning procedure, the MCU performs access to
these registers to find out which key was pressed. Scanning is an interrupt-based procedure, i.e. an interrupt generated when the key is pressed, and then the MCU can start the
scanning procedure. The side keys are also detected in the same way as the other keys,
except that there is no metaldome, and the middle pin is directly connected to the
ground.
Figure 4: Placement of keys
Power Key
All signals for keyboard come from UPP ASIC except PWRONX line for PWR key which is
connected directly to UEM. Pressing of PWR key grounds PWRONX line and UEM generates an interrupt to UPP which is then recognized as a PWR key press.
Keys
All signals for the keyboard come from the UPP through the emifilter (Z300) except the
side key, which will not go through the emifilter, and the power key signal, which is connected directly to the UEM. Pressing of the power key is detected so that the switch of
the power connects PWONX of the UEM to the GND and creates an interruption. Side key
detection is done by connecting line to ground when pressing the side key (volume up or
down). Emifilter is ESD and EMC protection.
The matrix-based keyboard interface consists of scan column I/O data register and of a
row data register. In keyboard scanning procedure, MCU performs access to these regis-
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ters to find out which key was pressed. Scanning is an interrupt procedure, i.e., an interrupt is generated when key is pressed and then the MCU can start the scanning
procedure. Side keys are also detected in the same way as other keys except that there is
no metaldome, but the middle pin is directly connected to the ground.
Table 2: Matrix of key detection lines
S0 / P00 S1 / P01 S2 / P02 S3 / P03 S4 / P04
R0 / P10 Side key / Vol.
down
R1 / P11 Side key / Vol.
down
R2 / P12 Side key / Vol.
down
R3 / P13 Side key / Vol.
down
R4 / P14 Side key / Vol.
down
R5 / P15 Reserved Side key / Vol. upSide key / Vol. upSide key / Vol. upSide key / Vol.
NC Send End NC
Soft left Up Down Soft right
1 4 7 *
2 5 8 0
3 6 9 #
up
NC = Not Connected
Lights
Introduction
RH-13 has 12 LEDs for lighting purposes. 6 of them (V300-V303, V310-V311) are for display and 6 (V304-V309) for keyboard. LEDs are green light -emitting and SMD throughboard-firing.
Interfaces
Display lights are controlled by Dlight signal from UEM. Dlight output is PWM signal
which is used to control average current going through LEDs. When battery voltage
changes new PWM value is written to the PWM register. This way brightness of the lights
remains the same with all battery voltages within range. Frequency of the signal is fixed
128Hz.
Keyboard lights are controlled by Klight signal from the UEM. Klight output is also PWM
signal and is used similar way as Dlight.
Technical information
Each LED requires hole in PWB where the body of LED locates in hole and terminals are
soldered on component side of module PWB. LEDs have white plastic body around the
diode itself which directs the emitted light better to UI-side. Current for LCD lights is
limited by resistor between Vbatt and LEDs. For keyboard lights there are resistors in par-
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allel.
Vibra
Introduction
Vibra is located to D-cover and is connected by spring connectors on the left bottom side
of the engine. Vibra manufacturers for RH-13 are Namiki and Matsushita.
Interfaces
Vibra is controlled by PWM signal VIBRA from UEM. With this signal it is possible to control both frequency and pulse width of signal. Pulse width is used to control current
when battery voltage changes. With frequency control it is possible to search optimum
frequency to have silent and efficient vibrating.
Table 3: Electrical parameters
Parameter Requirement Unit
Rated DC Voltage 1.3 V
Rated speed 9500 ±3000 rpm
Rated current 115 ±20 mA
Starting current 150 ±20 mA
Armature resistant 8.6 ohm
Rated DC voltage being able to use 1.2 to 1.7 V
Starting DC voltage min. 1.2 V
SIM card reader
Introduction
RH-13 is supporting SIM card reader. The SIM is located in the bottom of the engine. The
SIM card reader is manufactured by Amphenol.
Interface
The SIM card reader is connected by spring connectors on the PWB. EMC/ESD protection
is done by ASIP, R388. It is a CSP component. VSIM provides power supply voltage to the
SIM card reader. Two spark gaps are put to the no connected pin to provide protection
from ESD.
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Figure 5: SIM block
UEM
Technical information
The SIM interface is split between UEM and UPP. This has been done in order to reduce
the amount of interconnections on the SIM interface between the UPP and the UEM. The
SIM interface control logic and UART is integrated into the UPP. The SIM interface startup and power down sequence, including timing and reset generation is implemented in
UEM. The SIM interface in the UPP supports the SIM speed enhancement features, which
improves the data transfer rate in the SIM interface.
The UEM contains the SIM interface logic level shifting. UPP SIM interface logic levels
are 1.8V. The SIM interface can be programmed to support 3V and 1.8V SIMs. A 5V SIM
interface is not supported. The SIM supply voltage is selected by a register in the UEM. It
is only allowed to change the SIM supply voltage when the SIM IF is powered down. The
SIM power up/down sequence is generated in the UEM. This means that the UEM generates the RST signal to the SIM.
The data communication between the card and the phone is asynchronous half duplex.
The clock supplied to the card is in GSM system max. 3.25 MHz and TDMA 4.68Mhz. The
data baudrate is SIM card clock frequency divided by 372 (by default), 64, 32 or 16. The
protocol type, that is supported, is T=0 (asynchronous half-duplex character transmission
as defined in ISO 7816-3).
Audio HW
Earpiece
Introduction
RH-13 earpiece is located on the top of the engine.
The speaker is a dynamical one. It is very sensitive and capable of producing relatively
high sound pressure also at low frequencies. The speaker capsule and the mechanics
around it together make the earpiece.
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Interface
The earpiece is driven directly by UEM (EARP and EARN). Both lines are ESD protected
inside UEM (±8kV). The earpiece is connected on the PWB by spring connectors.
Technical information
The rated impedance of the earpiece is 32Ω and sensitivity at 1mW/1kHz is 103±3dB.
The diameter of the earpiece is 13.2mm and the thickness is 2.7mm. For more detailed
specification see data sheets under material code 5140067.
Microphone
Introduction
The microphone is an electret microphone with omnidirectional polar pattern. It consists
of an electrically polarized membrane and an metal electrode which form a capacitor. Air
pressure changes(i.e. sound) moves the membrane which causes voltage changes across
the capacitor. Because the capacitance is typically 2 pF a FET buffer is needed inside the
microphone capsule for the signal generated by the capacitor. Because of the FET the
microphone needs a bias voltage.
Buzzer
The microphone manufacturer for RH-13 is Matsushita.
Interface
The microphone input is driven single-ended from UEM MIC1P. The microphone bias
voltage is generated by MICB1. Esd protection is implemented by spark cap, buried
capacitor (Z153) and a special microphone capsule.
Technical information
Output impedance is 2,2kΩ and sensitivity at 1Pa/1kHz is -42±3dB. The diameter of the
microphone is 6.0mm and the thickness is 2.7mm. For more detailed specification see
data sheets under material code 5140213.
Introduction
The operating principle of buzzer is magnetic. The diaphragm of the buzzer is made of
magnetic material and it is located in a magnetic field created by a permanent magnet.
The winding is not attached to the diaphragm as is the case with the speaker.The winding is located in the magnetic circuit so that it can alter the magnetic field of the permanent magnet thus changing the magnetic force affecting the diaphragm. Buzzer's useful
frequency range is approximately from 2 kHz to 5kHz.
Interface
The buzzer is connected between Vbat and UEM. The UEM's buzzer driver generates
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PWM signal which controls the frequency and pulse width of signal of the buzzer. The
buzzer has spring contacts to PWB.
Technical information
Rated input voltage is 3.6V and resonance frequency is 2700Hz. The size of the buzzer is
11mm x 10.2mm x 2.2mm without a gasket. For more detailed specification see data
sheets under material code 5140229.
Battery
Phone battery
Introduction
Li-Ion 1000mAh battery BLB-3 is used in RH-13 by default. There is also possible use
BLB-2 (Li-Ion 750mAh) battery. Its thickness and capacity is smaller. Even though its
thickness is smaller it fits electrically and mechanically in RH-13.
Interface
The battery block contains NTC and BSI resistors for temperature measurement and battery identification. The BSI fixed resistor value indicates the chemistry and default
capacity of a battery. NTC-resistor measures the battery temperature. Temperature &
capacity information is needed for charge control. These resistors are connected to BSI
and BTEMP pins of battery connector. Phone has pull-up resistors (R202 and R203) for
these lines so that they can be read by A/D inputs in the phone. Dual resistor R205 is esd
protection. These can be left out if the protection of UEM itself is enough. There are also
spark caps in the battery lines to prevent esd. There is also EMI-filter between VBAT and
battery connector for EMC. See schematic.
Figure 6: Battery connection diagram
UEM
C220
1n
R203
100k
R205/1
10R
VFLASH1VANA VBAT
R202
100k
C108
10p
connector
VBATT
BSI
BTEMP
OVERCHARGE/
OVERDISCHARGE
PROTECTION
Li-Io n
C217
1n
R205/2
10R
C109
10p
GND
Batteries have a specific red line which indicates if the battery has been subjected to
excess humidity. The batteries are delivered in a protection mode, which gives longer
Issue 1 11/02 ãNokia Corporation Page 19
RH-13
1(+)
2(BSI)
3(BTEMP)
4(GND)
System Module CCS Technical Documentation
storage time. The voltage seen in the outer terminals is zero (or floating), and the battery
is activated by connecting the charger. Battery has internal protection for overvoltage
and overcurrent.
Figure 7: BLB-3 Battery contacts (BLB-2 has the same interface)
Technical information
Local mode is entered by inserting 560 Ohm resistors to these lines. In production following 1% resistors are needed in the case of BLB-3:
Normal/Calibration mode: BSI = 75k, BTEMP = 47k
Local mode: BSI = 560, BTEMP = 560
Test mode: BSI = 3.3k BTEMP = 560
Battery connector
RH-13 uses SMD type battery connector. This makes phone easier to assemble in production and connection between battery and PWB is more reliable. Battery connector is
manufactured by Hirose.
Table 4: Battery connector interface
# Signal name Connected from - to Batt
I/O
1 VBAT (+) (batt.) VBAT I/O Vbat 3.0-5.1V Battery voltage
2 BSI BSI
(batt.)
3 BTEMP BTEMP
(batt.)
4 GND GND GND Gnd Ground
UEM Out Ana. Battery size indicator
UEM Out Ana. 40mA /
Signal properties
A/--levels--freq./
timing
Switch
400mA
Description / Notes
Battery temperature indicator
Accessories Interface
System connector
Introduction
RH-13 uses same accessories as Nokia 61XX and 51XX products via similar system connector. RH-13 supports headsets HDC-9P, HDE-1P and loopset LPS-1P.
Page 20 ãNokia Corporation Issue 1 11/02
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