The µPD75P3018 replaces the µPD753017’s internal mask ROM with a one-time PROM, and features expanded ROM
capacity.
Because the µPD75P3018 supports programming by users, it is suitable for use in evaluations of systems in
development stages using the µPD753012, 753016, or 753017, and for use in small-scale production.
The following document describes further details of the functions. Please make sure to read this document
before starting design.
µPD753017 User's Manual : U11282E
FEATURES
Compatible with µPD753017
Memory capacity:
• PROM : 32768 x 8 bits
• RAM: 1024 x 4 bits
Can operate in same power supply voltage as the mask version µPD753017
DD = 2.2 to 5.5 V
• V
LCD controller/driver
ORDERING INFORMATION
Part NumberPackagePROM (¥ 8 bits)
µ
PD75P3018GC-3B980-pin plastic QFP (14 x 14 mm, 0.65-mm pitch)32768
µ
PD75P3018GK-BE980-pin plastic TQFP (fine pitch) (12 x 12 mm, 0.5-mm pitch)32768
Caution Mask-option pull-up resistors are not provided in this device.
*
The information in this document is subject to change without notice.
Document No. U10956EJ1V0DS00 (1st edition)
(Previous No. IP-3538)
Date Published August 1996 P
Printed in Japan
(detected edge is selectable)is selectable
INT1P11Asynch
INT2InputP12/TI1/TI2Rising edge detection test inputAsynchInput<B>-C
KR0-KR3I/OP60-P63Parallel falling edge detection test inputInput<F>-A
KR4-KR7I/OP70-P73Parallel falling edge detection test inputInput<F>-A
X1Input—Ceramic/crystal oscillation circuit connection for main system——
clock. If using an external clock, input to X1 and input
X2—inverted phase to X2.
XT1Input—Crystal oscillation circuit connection for subsystem clock.——
If using an external clock, input to XT1 and input inverted
XT2—phase to XT2. XT1 can be used as a 1-bit (test) input.
RESETInput—System reset input—<B>
MD0I/OP30/LCDCLMode selection for program memory (PROM) write/verifyInputE-B
MD1P31/SYNC
MD2, MD3P32, P33
D0-D3I/OP40-P43Data bus for program memory (PROM) write/verifyInputM-E
D4-D7P50-P53
VPP——Programmable power supply voltage for program memory——
(PROM) write/verify.
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
VDD——Positive power supply——
Vss——Ground——
Note
Note Circuit types enclosed in brackets indicate Schmitt trigger input.
8
µ
PD75P3018
3.2 Non-port Pins (2/2)
Pin nameI/OShared byFunctionStatusI/O circuit
after resettype
S0-S23Output—Segment signal outputNote 1G-A
S24-S31Output BP0-BP7Segment signal outputNote 1H-A
COM0-COM3 Output—Common signal outputNote 1G-B
VLC0-VLC2——Power source for LCD driver——
BIASOutput—Output for external split resistor cutHigh—
Note 2
LCDCL
SYNC
Note 2
I/OP30Clock output for driving external expansion driverInputE-B
I/OP31Clock output for synchronization of external expansion driverInputE-B
impedance
Notes 1. The VLCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S0-S31: V
LC1, COM0-COM2: VLC2, COM3: VLC0
2. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
9
3.3 Pin Input/Output Circuits
The input/output circuits for the µPD75P3018’s pins are shown in abbreviated form below.
TYPE ATYPE D
V
DD
µ
PD75P3018
V
DD
IN
P-ch
N-ch
CMOS standard input buffer
IN
Data
Output
disable
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
TYPE E-BTYPE B
P.U.R.
enable
Data
Type D
Output
disable
P-ch
N-ch
V
DD
P.U.R.
P-ch
IN/OUT
OUT
Schmitt trigger input with hysteresis characteristics.
TYPE B-CTYPE F-A
V
DD
P.U.R.
P-ch
IN
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Output
disable
Data
Type A
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Type D
Type B
P.U.R. : Pull-Up Resistor
V
DD
P.U.R.
P-ch
IN/OUT
(Continued)
10
µ
PD75P3018
TYPE F-BTYPE H-A
P.U.R.
Output
disable
(P)
Data
Output
disable
Output
disable
(N)
P.U.R. : Pull-Up Resistor
enable
V
DD
P-ch
N-ch
V
DD
P-ch
IN/OUT
P.U.R.
SEG
data
Bit Port
data
Output
disable
TYPE M-CTYPE G-A
*
V
LC0
P-ch
V
LC1
N-chP-ch
*
Type G-A
Type E-B
P.U.R.
enable
V
DD
IN/OUT
P.U.R.
P-ch
IN/OUT
OUT
SEG
data
V
LC2
N-ch
TYPE G-BTYPE M-E
V
LC0
P-ch
V
LC1
P-ch
COM
data
N-ch
V
LC2
N-ch
N-ch
N-ch
OUT
P-ch
Data
Output
disable
Output
disable
Input instruction
Pull-up resistor operated only when executing input instructions
Note
(when pins are low level, current flows from VDD to pins).
P.U.R. : Pull-Up Resistor
*
Data
V
DD
P-ch
P.U.R.
N-ch
Note
Voltage
controller
IN/OUT
N-ch
(+13-V
breakdown
voltage)
(+13-V
breakdown
voltage)
11
3.4 Recommended Connection for Unused Pins
PinRecommended connection
P00/INT4Connect to VSS or VDD
P01/SCKConnect to VSS or VDD
P02/SO/SB0
P03/SI/SB1Connect to VSS
P10/INT0, P11/INT1Connect to VSS or VDD
P12/TI1/TI2/INT2
P13/TI0
P20/PTO0Input status :connect to Vss or VDD through
P21/PTO1individual resistor
P22/PTO2/PCLOutput status :open
P23/BUZ
P30/LCDCL/MD0
P31/SYNC/MD1
P32/MD2, P33/MD3
P40-P43
P50-P53
P60/KR0-P63/KR3
P70/KR4-P73/KR7
S0-S23Open
S24/BP0-S31/BP7
COM0-COM3
VLC0-VLC2Connect to Vss
BIASConnect to Vss only when VLC0 to VLC2 are all not used.
Note
XT1
Note
XT2
In other cases, leave open.
Connect to Vss
Open
µ
PD75P3018
*
Note When subsystem clock is not used, specify SOS.0 = 1 (indicates that
internal feedback resistor is disconnected).
12
µ
PD75P3018
4. SWITCHING FUNCTION BETWEEN Mk I AND Mk II MODE
Setting a stack bank selection (SBS) register for the µPD75P3018 enables the program memory to be switched between
Mk I mode and Mk II mode. This function is applicable when using the µPD75P3018 to evaluate the µPD753012, 753016,
or 753017.
When the SBS bit 3 is set to 1 : sets Mk I mode (supports Mk I mode for µPD753012, 753016, and 753017)
When the SBS bit 3 is set to 0 : sets Mk II mode (supports Mk II mode for µPD753012, 753016, and 753017)
4.1 Difference between Mk I Mode and Mk II Mode
Table 4-1 lists points of difference between the Mk I mode and the Mk II mode for the µPD75P3018.
Table 4-1. Difference between Mk I Mode and Mk II Mode
ItemMk I ModeMk II Mode
Program counterPC13-0PC14-0
PC14 is fixed at 0
Program memory (bytes)1638432768
Data memory (bits)1024 x 4
StackStack bankSelectable via memory banks 0 to 3
CALLA !addr1 instruction
InstructionCALL !addr instruction3 machine cycles4 machine cycles
execution time CALLF !faddr instruction2 machine cycles3 machine cycles
Supported mask ROMsWhen set to Mk I mode:When set to Mk II mode:
µPD753012, 753016, and 753017µPD753012, 753016, and 753017
Caution The Mk II mode supports a program area exceeding 16 Kbytes for the 75X and 75XL series. Therefore,
this mode is effective for enhancing software compatibility with products that have a program area of
more than 16 Kbytes.
With regard to the number of stack bytes during execution of subroutine call instructions, the usable
area increases by 1 byte per stack compared to the Mk I mode when the Mk II mode is selected.
However, when the CALL !addr and CALLF !faddr instructions are used, the machine cycle becomes
longer by 1 machine cycle. Therefore, if more emphasis is placed on RAM use efficiency and
processing performance than on software compatibility, the Mk I mode should be used.
*
13
µ
PD75P3018
4.2 Setting of Stack Bank Selection Register (SBS)
Use the stack bank selection register to switch between Mk I mode and Mk II mode. Figure 4-1 shows the format for doing
this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
sure to initialize the stack bank selection register to 10XXB
Note
be sure to initialize it to 00XXB
.
Note
at the beginning of the program. When using the Mk II mode,
Note Set the desired value for XX.
Figure 4-1. Format of Stack Bank Selection Register
Address3210
SBS3 SBS2 SBS1 SBS0F84H
Symbol
SBS
Stack area specification
0
0
Memory bank 0
0
1
Memory bank 1
1
0
Memory bank 2
1
1
Memory bank 3
0Be sure to enter “0” for bit 2.
Mode selection specification
01Mk II mode
Mk I mode
Cautions 1. SBS3 is set to “1” after RESET input, and consequently the CPU operates in Mk I mode. When using
instructions for Mk II mode, set SBS3 to “0” and set Mk II mode before using the instructions.
2. When using Mk II mode, execute a subroutine call instruction and an interrupt instruction after
RESET input and after setting the stack bank selection register.
14
µ
PD75P3018
5. DIFFERENCES BETWEEN µPD75P3018 AND µPD753012, 753016, AND 753017
The µPD75P3018 replaces the internal mask ROM in the µPD753012, 753016, and 753017 with a one-time PROM and
features expanded ROM capacity. The µPD75P3018’s Mk I mode supports the Mk I mode in the µPD753012, 753016,
and 753017 and the µPD75P3018’s Mk II mode supports the Mk II mode in the µPD753012, 753016, and 753017.
Table 5-1 lists differences among the µPD75P3018 and the µPD753012, 753016, and 753017. Be sure to check the
differences among these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For the CPU functions and internal hardwares, refer to µPD753017 User's Manual (U11282E).
Table 5-1. Differences between µPD75P3018 and µPD753012, 753016, and 753017
ItemµPD753012µPD753016µPD753017µPD75P3018
Program counter14 bits15 bits
Program memory (bytes)Mask ROMOne-time PROM
During12288163841638416384
Mk I mode
During12288163842457632768
Mk II mode
Data memory (x 4 bits)1024
Mask optionsPull-up resistor forYes (Can be specified whether to incorporate or not)
Pin configuration Pin Nos. 29 to 32P40 to P43P40/D0 to P43/D3
OtherNoise resistance and noise radiation may differ due to the different circuit sizes and mask
PORT4 and PORT5
LCD split resistor
Feed back resistorYes (Can be specified with the SOS register whether to
for subsystem clockincorporate or not)
Wait timeYes (Can be specified either 217/fX or 215/fX)
during RESET
Pin Nos. 34 to 37P50 to P53P50/D4 to P53/D7
Pin No. 50P30/LCDCLP30/LCDCL/MD0
Pin No. 51P31/SYNCP31/SYNC/MD1
Pin Nos. 52 and 53P32, P33P32/MD2, P33/MD3
Pin No. 57ICVPP
layouts.
Note
No (Cannot incorporate)
No (Cannot incorporate)
No (Fixed at 215/fX)
Note
*
*
Note For 217/fX, during 6.0 MHz operation is 21.8 ms, and during 4.19 operation is 31.3 ms.
15
/fX, during 6.0 MHz operation is 5.46 ms, and during 4.19 operation is 7.81 ms.
For 2
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. In transferring to mask
ROM versions from the PROM version in a processe between prototype development and full
production, be sure to fully evaluate the mask ROM version’s CS (not ES).
15
µ
PD75P3018
6. MEMORY CONFIGURATION
6.1 Program Counter (PC) ... 15 bits
This is a 15-bit binary counter that stores program memory address data.
Bit 15 is valid during Mk II mode. But PC14 is fixed at zero during Mk I mode, and the lower 14 bits are all valid.
The program memory consists of 32768 x 8-bit one-time PROM. The program memory address can be selected as shown
below by setting the stack bank selection (SBS) register.
Mk I modeMk II mode
Usable address0000H to 3FFFH0000H to 7FFFH
Figures 6-2 and 6-3 show the addressing ranges for the program memory and branch instruction and the subroutine call
instruction, during Mk I and Mk II modes.