NEC UPC2807W Datasheet

DATA SHEET

BiCMOS INTEGRATED CIRCUIT

µ

µ

PC2807,2807A

µ µ

PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER

DESCRIPTION

The µ PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of
infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain
first stage amplifier, limiter, bandpass filter, detector circuit, and waveform-shaping circuit on a single chip.

FEATURES

• Only PIN photodiode required as an external component.

) selectable (five types):

• Following carrier frequencies (f

PC2807 : fO = 32.7, 36.0, 36.7, 37.9 kHz

µ

PC2807A : fO = 40.0 kHz

µ

• Fixed trap frequency

= 54 kHz

T

f

• Active-low output

• Supplied in form of wafer

APPLICATION

• Receiver module of infrared remote controller

ORDERING INFORMATION

Part Number Condition in shipment

PC2807W Wafer

µ

PC2807AW Wafer

µ

Contact an NEC sales representative in advance since a memorandum on product quality need to be prepared for

O

shipment in the form of wafer.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. S13198EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP (K)
Printed in Japan

The mark ★ shows major revised points.

1998, 2000

BLOCK DIAGRAM

µ

µ

PC2807, 2807A

µ µ

V

CC

PAD1

6

ABLC

First-stage

amplifier

9

IN

I/V

Carrier

elimination

Limiter

amplifier

TRAP

skip

13

PAD5

TRAP

Trimming

circuit

12 11 10

PAD4

PAD3

BPF

3

fO setting

4

S3 S2

Detector

2

1

S1

Waveform-shaping
circuit

22 kΩ

5 OUT

8 7

GND2PAD6

GND1

2

Data Sheet S13198EJ1V0DS00

µ

µ

PC2807, 2807A

µ µ

PAD FUNCTION

Symbol Pad No. Function
V

CC

GND1 7 GND pad (for output transistor)
GND2 8 GND pad (for circuits excluding output transistor)
IN 9 Input pad. Internal impedance is 190 kΩ TYP. PIN photodiode can be directly connected.
OUT 5

S1 1
S2 2
S3 4
PAD1 3 BPF output pad. Parameters such as voltage gain and BPF bandwidth can be tested.

PAD3 10
PAD4 11
PAD5 12
PAD6 13

6 Power pad. Apply a voltage of 5 V ± 10 %. Connect an external smoothing filter if noise on power line

is high.

Output pad. Open-collector output with pull-up resistor (22 kΩ TYP.) To connect pull-up resistor, use
resistor of 10 kΩ or higher.

BPF center frequency setting pads.
Connect pad corresponding to carrier frequency to be used to GND

Do not connect this pad to anything on final assembly.
Test and trimming pads. Do not connect these pads to anything.

Note

.

Note

Connect each of BPF center frequency setting pads as follows depending on the carrier frequency.

• µ PC2807

Carrier Frequency S1 S2 S3

32.7 kHz GND Leave unconnected. Leave unconnected.

36.0 kHz GND GND GND

36.7 kHz Leave unconnected. GND GND

37.9 kHz Leave unconnected. Leave unconnected. Leave unconnected.

PC2807A

•

µ

Carrier Frequency S1 S2 S3

40.0 kHz Leave unconnected. Leave unconnected. Leave unconnected.

Data Sheet S13198EJ1V0DS00

3